Thermal process apparatus for a semiconductor substrate

    公开(公告)号:US06641302B2

    公开(公告)日:2003-11-04

    申请号:US09962851

    申请日:2001-09-26

    IPC分类号: G01J500

    摘要: A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

    Thermal processing system
    2.
    发明授权
    Thermal processing system 失效
    热处理系统

    公开(公告)号:US06891131B2

    公开(公告)日:2005-05-10

    申请号:US10257622

    申请日:2001-04-17

    摘要: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

    摘要翻译: 热处理系统通过借助于加热灯系统对被处理物体施加辐射热,对大致圆形待处理物体进行预定的热处理。 加热灯系统包括多个灯,其同心地设置成对应于被处理物体。 对待处理物体的各个区域分别控制多个灯。

    Heat treatment apparatus having a thin light-transmitting window

    公开(公告)号:US06437290B1

    公开(公告)日:2002-08-20

    申请号:US09930495

    申请日:2001-08-16

    IPC分类号: H05B514

    摘要: A quartz window decreases an amount of absorption of heat from a heat source while maintaining a pressure difference between the pressure inside a process chamber and an atmospheric pressure. The process chamber defines a process space for processing an object to be processes. A placement stage is provided in the process chamber so as to place the object to be processed thereon. A gas supply part which supplies to the process chamber a process gas for processing the object to be processed. The quartz window is provided as a part of the process chamber so that the quartz window is opposite to the object to be processed placed on the placement stage. A heating unit has a heat radiation lamp provided on an opposite side of the process chamber with respect to the light-transmitting window. The quartz window constitutes a convex lens part which is formed on a periphery of the quartz window and protrudes into the process space.

    VACUUM PROCESSING APPARATUS
    4.
    发明申请
    VACUUM PROCESSING APPARATUS 审中-公开
    真空加工设备

    公开(公告)号:US20100212592A1

    公开(公告)日:2010-08-26

    申请号:US12664808

    申请日:2008-06-13

    申请人: Yicheng Li

    发明人: Yicheng Li

    IPC分类号: C23C16/00 C23C16/50

    CPC分类号: H01L21/67126 C23C16/4409

    摘要: An annular groove (150) is formed in a lid (3) of a vacuum processing chamber (2) along the periphery of an opening serving as a gas passage. A metal seal (140), having an annular shape (O-ring shape) as a whole and having a double-layered structure, is provided in the groove (150). An annular recess (160) is formed outside the groove (150) in the cover (3) to surround the groove (150). An annular protrusion (170) corresponding to the recess (160) is formed on a flange portion (130), and a fitting mechanism (180) for fitting the protrusion (170) is formed in the recess (160).

    摘要翻译: 在真空处理室(2)的盖(3)中沿着用作气体通道的开口的周边形成环形槽(150)。 在所述槽(150)中设置有作为整体具有环状(O形环形状)并具有双层结构的金属密封件(140)。 在盖(3)中的槽(150)的外部形成环形凹部(160),以围绕凹槽(150)。 在凸缘部分(130)上形成对应于凹部(160)的环形突起(170),并且在凹部(160)中形成有用于安装突起(170)的装配机构(180)。

    Single-substrate-heat-processing apparatus for semiconductor process
    5.
    发明授权
    Single-substrate-heat-processing apparatus for semiconductor process 有权
    用于半导体工艺的单衬底加热装置

    公开(公告)号:US06448536B2

    公开(公告)日:2002-09-10

    申请号:US09824018

    申请日:2001-04-03

    IPC分类号: F27B514

    CPC分类号: H01L21/67115 H01L21/67103

    摘要: A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.

    摘要翻译: 单基板加热装置包括气密处理室,其内部通过安装板和屏蔽框架分隔成处理空间和下部空间。 加热灯设置在处理室外部和安装板下方的位置。 安装板通过隔离器由屏蔽框架支撑,隔离器的导热率低于安装板的导热系数。 隔离器由下部构件和上部构件形成。 上部构件具有分别在非接触状态下覆盖屏蔽框架的内边缘和安装板的外边缘的外部和内部盖部分。

    Exhaust system for a vacuum processing system
    6.
    发明授权
    Exhaust system for a vacuum processing system 失效
    真空处理系统排气系统

    公开(公告)号:US07670432B2

    公开(公告)日:2010-03-02

    申请号:US11369754

    申请日:2006-03-08

    申请人: Yicheng Li

    发明人: Yicheng Li

    IPC分类号: C23C16/505 H01L21/363

    CPC分类号: C23C16/4412

    摘要: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

    摘要翻译: 描述了一种在真空处理系统的处理空间中处理基板的方法,计算机可读介质和系统。 真空泵与真空处理系统流体连通并且构造成抽空处理空间,同时过程材料供应系统气动地耦合到真空处理系统并且被配置为将处理气体供应到处理空间。 此外,真空泵气动地联接到过程供应系统并且构造成有时抽真空处理气体供应系统。

    Exhaust apparatus configured to reduce particle contamination in a deposition system
    7.
    发明申请
    Exhaust apparatus configured to reduce particle contamination in a deposition system 有权
    排气装置构造成减少沉积系统中的颗粒污染

    公开(公告)号:US20070212484A1

    公开(公告)日:2007-09-13

    申请号:US11369883

    申请日:2006-03-08

    申请人: Yicheng Li

    发明人: Yicheng Li

    IPC分类号: B05D3/00 C23C16/00

    CPC分类号: C23C16/4412

    摘要: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

    摘要翻译: 一种用于在衬底上气相沉积的方法和系统,其将衬底设置在与处理系统的传送空间隔离的处理系统的处理空间中,在该过程中的第一位置或第二位置处理基板 同时保持与传送空间的隔离,并且在第一位置或第二位置处将材料沉积在所述基板上。 此外,该系统包括配置为耦合到处理空间的高电导排气装置,由此在沉积系统中处理的基板的颗粒污染最小化。 排气装置包括位于基板上方的泵送系统和排气管,其中排气管道具有位于基板平面下方的入口。

    Thermal processing system and thermal processing method
    8.
    发明授权
    Thermal processing system and thermal processing method 失效
    热处理系统和热处理方法

    公开(公告)号:US06889004B2

    公开(公告)日:2005-05-03

    申请号:US10257621

    申请日:2001-04-17

    申请人: Yicheng Li

    发明人: Yicheng Li

    CPC分类号: H01L21/67115 H01L21/68

    摘要: A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

    摘要翻译: 一种热处理系统,用于通过放置部分旋转待处理物体,并且通过将预定气体供应到处理室中对被处理物体进行热处理,来加热被处理物体。 设置在处理室外部的外圈部分和设置在处理室内部的内环部分具有多个周向布置的磁极。 磁极在外环部分和内环部分之间施加磁力,使得内环部分将跟随外环部分的旋转。 选择外环部分和内环部分的磁极数量以在旋转期间在外环部分和内环部分之间实现允许的角度误差。

    Transfer apparatus and method for semiconductor process and semiconductor processing system
    9.
    发明授权
    Transfer apparatus and method for semiconductor process and semiconductor processing system 失效
    半导体工艺和半导体处理系统的转移装置和方法

    公开(公告)号:US06845292B2

    公开(公告)日:2005-01-18

    申请号:US10467345

    申请日:2002-01-23

    申请人: Lin Sha Yicheng Li

    发明人: Lin Sha Yicheng Li

    摘要: A transfer apparatus (42) for a semiconductor processing system includes a transfer member (44) having a support portion (48) to place a target substrate (W) thereon, and a drive unit (68) for driving the transfer member (44). A reference mark (54) is disposed adjacent to the support portion (48). The target substrate (W) has optically observable first and second portions (84, 86). A storage section (63) stores a normal image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), obtained when the target substrate (W) is placed on the support portion (48) at a normal position. An image pick-up device (62A) takes a detection image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), when the transfer member (44) transfers the target substrate (W). An information processing unit (62B) obtains a misalignment amount of the target substrate (W) relative to the normal position, based on the normal image and the detection image.

    摘要翻译: 一种用于半导体处理系统的传送装置(42)包括:传送部件(44),具有用于将目标基板(W)放置在其上的支撑部分(48);以及用于驱动传送部件(44)的驱动单元(68) 。 参考标记(54)邻近支撑部分(48)设置。 目标衬底(W)具有光学可观察的第一和第二部分(84,86)。 存储部(63)存储表示基准标记(54)与将目标基板(W)放置在支撑部(48)上时获得的第一和第二部分(84,86)之间的位置相关性的正常图像 )在正常位置。 当传送部件(44)传送目标基板(W)时,图像拾取装置(62A)采用显示参考标记(54)与第一和第二部分(84,86)之间的位置相关性的检测图像 )。 信息处理单元(62B)基于正常图像和检测图像来获得目标基板(W)相对于正常位置的不对准量。

    Method and system for sealing a first assembly to a second assembly of a processing system
    10.
    发明授权
    Method and system for sealing a first assembly to a second assembly of a processing system 有权
    用于将第一组件密封到处理系统的第二组件的方法和系统

    公开(公告)号:US08454749B2

    公开(公告)日:2013-06-04

    申请号:US11305036

    申请日:2005-12-19

    申请人: Yicheng Li

    发明人: Yicheng Li

    IPC分类号: C23C16/06

    摘要: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

    摘要翻译: 一种用于气相沉积在基板上的方法,计算机可读介质和系统,其将气相沉积系统的第一组件保持在第一温度,将气相沉积系统的第二组件保持在低于第一温度的降低的温度, 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离,并且将材料沉积在所述衬底上。 因此,该系统包括具有被配置为促进材料沉积的处理空间的第一组件,耦合到第一组件的第二组件,并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板,以及密封组件,其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度,并且第二组件构造成保持在低于第一温度的降低的温度。