公开(公告)号：US07859659B2

公开(公告)日：2010-12-28

申请号：US11614315

申请日：2006-12-21

申请人： Yiping Xu ,  Ibrahim Abdulhalm

发明人： Yiping Xu ,  Ibrahim Abdulhalm

IPC分类号： G01J3/00

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US20100165340A1

公开(公告)日：2010-07-01

申请号：US12642670

申请日：2009-12-18

申请人： Yiping Xu ,  Ibrahim Abdulhalm

发明人： Yiping Xu ,  Ibrahim Abdulhalm

IPC分类号： G01J3/447 ,  G01B11/14 ,  G01J4/04

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US07898661B2

公开(公告)日：2011-03-01

申请号：US12642670

申请日：2009-12-18

申请人： Yiping Xu ,  Ibrahim Abdulhalm

发明人： Yiping Xu ,  Ibrahim Abdulhalm

IPC分类号： G01J4/00

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US07173699B2

公开(公告)日：2007-02-06

申请号：US10251246

申请日：2002-09-20

申请人： Yiping Xu ,  Ibrahim Abdulhalim

发明人： Yiping Xu ,  Ibrahim Abdulhalim

IPC分类号： G01J4/00

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US06358014B1

公开(公告)日：2002-03-19

申请号：US09535923

申请日：2000-03-24

申请人： Chen-Yu J. Chou ,  Gerald A. Pauley ,  Yiping Xu

发明人： Chen-Yu J. Chou ,  Gerald A. Pauley ,  Yiping Xu

IPC分类号： B64C1114

CPC分类号： B64C11/14 ,  F02C7/04 ,  F05D2250/20 ,  F05D2250/232 ,  F05D2300/2102 ,  F05D2300/224 ,  F05D2300/30 ,  F05D2300/44 ,  F05D2300/6012 ,  F05D2300/603 ,  Y02T50/672 ,  Y10T29/49318

摘要： Increased impact resistance capability is achieved in a cost and weight efficient manner by providing a spinner made of a 3-D orthogonal woven composite material. The spinner defines a generally conical shell having a plurality of axial rib stiffeners and at least one circumferential rib stiffener integrally formed thereon. The combination of the integral rib stiffeners with the 3-D orthogonal woven composite material results in a substantially greater torsional stiffness. The use of the 3-D orthogonal woven composite material also eliminates delamination found in laminated composite spinners.

摘要翻译： 通过提供由3-D正交编织复合材料制成的旋转器，以成本和重量有效的方式实现了抗冲击性能的提高。 旋转器限定了具有多个轴向肋加强件和在其上整体形成的至少一个周向肋加强件的大致圆锥形壳体。 整体肋加强筋与3-D正交编织复合材料的组合导致显着更大的扭转刚度。 使用3-D正交织物复合材料也可以消除叠层复合纺丝机中发生的剥离现象。

公开(公告)号：US20070091327A1

公开(公告)日：2007-04-26

申请号：US11614315

申请日：2006-12-21

申请人： Yiping Xu ,  Ibrahim Abdulhalim

发明人： Yiping Xu ,  Ibrahim Abdulhalim

IPC分类号： G01B11/14

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US06590656B2

公开(公告)日：2003-07-08

申请号：US09960898

申请日：2001-09-21

申请人： Yiping Xu ,  Ibrahim Abdulhalim

发明人： Yiping Xu ,  Ibrahim Abdulhalim

IPC分类号： G01J400

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

公开(公告)号：US06483580B1

公开(公告)日：2002-11-19

申请号：US09036557

申请日：1998-03-06

申请人： Yiping Xu ,  Ibrahim Abdulhalim

发明人： Yiping Xu ,  Ibrahim Abdulhalim

IPC分类号： G01J300

CPC分类号： G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

摘要翻译： 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US5555471A

公开(公告)日：1996-09-10

申请号：US449353

申请日：1995-05-24

申请人： Yiping Xu ,  Yuan J. Li

发明人： Yiping Xu ,  Yuan J. Li

IPC分类号： G01B11/06 ,  G01B9/02

CPC分类号： G01B11/0675

摘要： The film thickness and surface profile of a test sample consisting of optically dissimilar regions are measured by phase-shifting interferometry. Conventional phase-shifting interferometry at a given wavelength is performed to measure the step height between two regions of the surface. The theoretical measured step height as a function of the film thickness is then calculated. A set of possible solutions corresponding to the experimentally measured-height are found numerically or graphically by searching the theoretically generated function at the measured height. If more than one solution exists, the phase-shifting procedure is repeated at a different wavelength and a new theoretical measured-height as a function of the film thickness is calculated for the optical parameters of the materials at the new wavelength, yielding another set of possible solutions that correspond to the newly measured height. The number of repetitions of the procedure depends on the number of unknowns of the test sample. The film thicknesses are obtained by comparing all possible solution sets and finding the single combination of thicknesses corresponding to the experimentally measured heights at different measurement wavelengths. The same method may also be used for reconstructing a 3-dimensional profile of the patterned film surface by measuring the film thickness variation point by point across the entire measurement field.

摘要翻译： 通过相移干涉法测量由光学不相似区域组成的测试样品的膜厚度和表面轮廓。 执行给定波长的常规相移干涉测量以测量表面的两个区域之间的台阶高度。 然后计算作为膜厚度的函数的理论测量步长。 通过在测量的高度上搜索理论上产生的函数，数字地或图形地找到与实验测量的高度相对应的一组可能的解决方案。 如果存在多于一种解决方案，则以不同的波长重复相移过程，并且计算出新的波长处的材料的光学参数，作为膜厚的函数的新的理论测量高度，产生另一组 对应于新测量高度的可能解决方案。 程序的重复次数取决于测试样本的未知数。 通过比较所有可能的解集合并找到在不同测量波长处对应于实验测量的高度的单个厚度组合来获得膜厚度。 通过在整个测量场中逐点测量膜厚度变化，也可以使用相同的方法来重建图案化膜表面的3维轮廓。

公开(公告)号：US5321497A

公开(公告)日：1994-06-14

申请号：US848309

申请日：1992-03-09

申请人： Chiayu Ai ,  Yiping Xu

发明人： Chiayu Ai ,  Yiping Xu

IPC分类号： G01B9/02 ,  G01B11/24 ,  G01B11/00

CPC分类号： G01B11/2441 ,  G01B9/02078 ,  G01B9/02083

摘要： A method and system are described for performing phase unwrapping integrations in a phase-shifting interferometric profiling operation. The disclosed technique uses one characteristic of modulation or slope distributions to segment the modulation or slope histogram into a plurality of sections. The principal phase values are divided into a plurality of groups in accordance with corresponding modulation or slope histogram sections. The phase unwrapping integrations are performed in such an order that the areas with a high probability of containing a 2.pi. discontinuity are contained in the last group integrated. Thus, inaccuracies due to 2.pi. discontinuities do not "propagate" to earlier-computed phase values computed by the phase unwrapping algorithm.

摘要翻译： 描述了用于在相移干涉分析操作中执行相位展开积分的方法和系统。 所公开的技术使用调制或斜率分布的一个特征将调制或斜率直方图分割成多个部分。 根据相应的调制或斜率直方图部分，将主相位值分成多个组。 按照这样的顺序执行相位展开积分，使得在最后一个组合中包含具有高2概率不连续性概率的区域。 因此，由于2 pi不连续性引起的不准确性不会“传播”到由相位解包算法计算的较早计算的相位值。