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公开(公告)号：US07944730B2
公开(公告)日：2011-05-17
申请号：US12412546
申请日：2009-03-27
申请人： Yiran Chen , Hai Li , Wengzhong Zhu , Xiaobin Wang , Ran Wang , Hongyue Liu
发明人： Yiran Chen , Hai Li , Wengzhong Zhu , Xiaobin Wang , Ran Wang , Hongyue Liu
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2213/79
摘要： A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.
摘要翻译： 写入电阻式读出存储器单元的方法包括在电阻读出存储单元和半导体晶体管两端施加第一电压以将第一数据状态写入电阻读出存储单元。 第一电压在第一方向通过电阻读出存储单元形成第一持续时间的第一写入电流。 然后，该方法包括在电阻读出存储单元和晶体管两端施加第二电压以将第二数据状态写入电阻读出存储单元。 第二电压在第二方向通过电阻读出存储器单元形成第二持续时间的第二写入电流。 第二方向与第一方向相反，第一电压具有与第二电压不同的值，并且第一持续时间基本上与第二持续时间相同。
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公开(公告)号：US20100110762A1
公开(公告)日：2010-05-06
申请号：US12412546
申请日：2009-03-27
申请人： Yiran Chen , Hai Li , Wengzhong Zhu , Xiaobin Wang , Ran Wang , Hongyue Liu
发明人： Yiran Chen , Hai Li , Wengzhong Zhu , Xiaobin Wang , Ran Wang , Hongyue Liu
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2213/79
摘要： A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.
摘要翻译： 写入电阻式读出存储器单元的方法包括在电阻读出存储单元和半导体晶体管两端施加第一电压以将第一数据状态写入电阻读出存储单元。 第一电压在第一方向通过电阻读出存储单元形成第一持续时间的第一写入电流。 然后，该方法包括在电阻读出存储单元和晶体管两端施加第二电压以将第二数据状态写入电阻读出存储单元。 第二电压在第二方向通过电阻读出存储器单元形成第二持续时间的第二写入电流。 第二方向与第一方向相反，第一电压具有与第二电压不同的值，并且第一持续时间基本上与第二持续时间相同。
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公开(公告)号：US20110058405A1
公开(公告)日：2011-03-10
申请号：US12946582
申请日：2010-11-15
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
CPC分类号： G11C7/062 , G11C11/1673 , G11C11/1693 , G11C13/004 , G11C2013/0057 , G11C2207/063
摘要： Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
摘要翻译： 本发明的各种实施例通常涉及用于感测诸如自旋扭矩传递随机存取存储器（STRAM）单元的存储器单元的编程状态的方法和装置。 将第一读取电流施加到存储器单元以产生第一电压。 随后将第二读取电流施加到存储器单元以产生第二电压，其中第二读取电流在幅度上与第一读取电流成比例。 在第一和第二电压之间进行比较以确定存储器单元的编程状态。
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公开(公告)号：US20100110785A1
公开(公告)日：2010-05-06
申请号：US12406356
申请日：2009-03-18
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
CPC分类号： G11C7/062 , G11C11/1673 , G11C11/1693 , G11C13/004 , G11C2013/0057 , G11C2207/063
摘要： Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
摘要翻译： 本发明的各种实施例通常涉及用于感测诸如自旋扭矩传递随机存取存储器（STRAM）单元的存储器单元的编程状态的方法和装置。 将第一读取电流施加到存储器单元以产生第一电压。 随后将第二读取电流施加到存储器单元以产生第二电压，其中第二读取电流在幅度上与第一读取电流成比例。 在第一和第二电压之间进行比较以确定存储器单元的编程状态。
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公开(公告)号：US08203899B2
公开(公告)日：2012-06-19
申请号：US12946582
申请日：2010-11-15
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
IPC分类号： G11C7/02
CPC分类号： G11C7/062 , G11C11/1673 , G11C11/1693 , G11C13/004 , G11C2013/0057 , G11C2207/063
摘要： Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
摘要翻译： 本发明的各种实施例通常涉及用于感测诸如自旋扭矩传递随机存取存储器（STRAM）单元的存储器单元的编程状态的方法和装置。 将第一读取电流施加到存储器单元以产生第一电压。 随后将第二读取电流施加到存储器单元以产生第二电压，其中第二读取电流在幅度上与第一读取电流成比例。 在第一和第二电压之间进行比较以确定存储器单元的编程状态。
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公开(公告)号：US07852665B2
公开(公告)日：2010-12-14
申请号：US12406356
申请日：2009-03-18
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Ran Wang , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/1673 , G11C11/1693 , G11C13/004 , G11C2013/0057 , G11C2207/063
摘要： Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
摘要翻译： 本发明的各种实施例通常涉及用于感测诸如自旋扭矩传递随机存取存储器（STRAM）单元的存储器单元的编程状态的方法和装置。 将第一读取电流施加到存储器单元以产生第一电压。 随后将第二读取电流施加到存储器单元以产生第二电压，其中第二读取电流在幅度上与第一读取电流成比例。 在第一和第二电压之间进行比较以确定存储器单元的编程状态。
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7.发明申请公开(公告)号：US20120127787A1
公开(公告)日：2012-05-24
申请号：US13349044
申请日：2012-01-12
申请人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
发明人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
IPC分类号： G11C11/16
CPC分类号： G11C11/1673 , G11C11/1693
摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
摘要翻译： 自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。
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公开(公告)号：US08416614B2
公开(公告)日：2013-04-09
申请号：US13349044
申请日：2012-01-12
申请人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
发明人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1673 , G11C11/1693
摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
摘要翻译： 自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。
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公开(公告)号：US08009457B2
公开(公告)日：2011-08-30
申请号：US12967802
申请日：2010-12-14
申请人： Hai Li , Yiran Chen , Harry Hongyue Liu , Henry Huang , Ran Wang
发明人： Hai Li , Yiran Chen , Harry Hongyue Liu , Henry Huang , Ran Wang
CPC分类号： G11C8/08 , G11C11/1659 , G11C11/1675 , G11C13/0028 , G11C13/0069 , G11C2013/0071
摘要： Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
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公开(公告)号：US07974121B2
公开(公告)日：2011-07-05
申请号：US12967743
申请日：2010-12-14
申请人： Hai Li , Yiran Chen , Harry Hongyue Liu , Henry Huang , Ran Wang
发明人： Hai Li , Yiran Chen , Harry Hongyue Liu , Henry Huang , Ran Wang
CPC分类号： G11C8/08 , G11C11/1659 , G11C11/1675 , G11C13/0028 , G11C13/0069 , G11C2013/0071
摘要： Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
摘要翻译： 非易失性存储单元中的写入电流补偿的装置和方法，例如但不限于自旋转矩传递随机存取存储器（STRAM）或电阻随机存取存储器（RRAM）。 根据一些实施例，非易失性存储器单元具有耦合到开关器件的电阻感测元件（RSE），RSE具有硬编程方向和与硬编程方向相反的简单编程方向。 升压电路包括电容器，该电容器将电压加到由电压源向节点提供的标称非零电压以产生暂时提升的电压。 当RSE在硬编程方向编程时，升压电压施加到开关器件。
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