Method of producing organosilicon compound
    1.
    发明授权
    Method of producing organosilicon compound 有权
    生产有机硅化合物的方法

    公开(公告)号:US08097745B2

    公开(公告)日:2012-01-17

    申请号:US12749735

    申请日:2010-03-30

    IPC分类号: C07F7/18

    CPC分类号: C07F7/188 C07F7/1876

    摘要: A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

    摘要翻译: 公开了制备式R 2n(OR 4)m Si-R 1 -Si(OR 4)m R 2n的有机硅化合物的简单方法。 该方法包括以下两个步骤:Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M(OR4)r - →R2n(OR4)mSi-R1-Si(OR4) mR2n在式中,R1是亚甲基,亚烷基或亚芳基,R2是烷基,烯基,炔基或芳基,m和n是0-3,如果m + n = 3,至少一个m是1或更大,Y 是卤素,X是氢或卤素,R4是烷基,烯基,炔基或芳基,M是金属,r是金属的价)。 有机硅化合物用于形成具有优异的耐热性,耐化学性,导电性和弹性模量的膜。