公开(公告)号：US20090130956A1

公开(公告)日：2009-05-21

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/12 ,  B24B7/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US08388408B2

公开(公告)日：2013-03-05

申请号：US12461533

申请日：2009-08-14

申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。

公开(公告)号：US07960188B2

公开(公告)日：2011-06-14

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/00 ,  H01L21/302 ,  G01R31/26

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括进行第一抛光处理，在第一抛光处理之后，在第二抛光处理之后进行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光工艺。 在第二抛光工艺和第三抛光工艺期间，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时，第三抛光处理结束。

公开(公告)号：US07780503B2

公开(公告)日：2010-08-24

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并且将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US20100093260A1

公开(公告)日：2010-04-15

申请号：US12461533

申请日：2009-08-14

申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC分类号： B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。

公开(公告)号：US08157616B2

公开(公告)日：2012-04-17

申请号：US12476427

申请日：2009-06-02

申请人： Noburu Shimizu ,  Shinrou Ohta

发明人： Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/12

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12

摘要： A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

摘要翻译： 描述了用于检测基板的膜的抛光操作的终点（例如抛光停止点或抛光条件的改变点）的方法。 该方法包括在衬底的抛光期间将光施加到衬底的表面; 从基板的表面接收反射光，监测由不同波长的反射强度计算的第一特征值和第二特征值; 当所述第一特征值的极值点和所述第二特征值的极值出现在预定时间差内时，检测点; 在检测到所述点之后，检测所述第一特征值或所述第二特征值的预定极值点; 以及基于当检测到所述预定极值点时的点来确定抛光终点。

公开(公告)号：US20090298387A1

公开(公告)日：2009-12-03

申请号：US12476427

申请日：2009-06-02

申请人： Noburu SHIMIZU ,  Shinrou Ohta

发明人： Noburu SHIMIZU ,  Shinrou Ohta

IPC分类号： B24B49/02 ,  B24B49/12

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12

摘要： A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

摘要翻译： 描述了用于检测基板的膜的抛光操作的终点（例如抛光停止点或抛光条件的改变点）的方法。 该方法包括在衬底的抛光期间将光施加到衬底的表面; 从基板的表面接收反射光，监测由不同波长的反射强度计算的第一特征值和第二特征值; 当所述第一特征值的极值点和所述第二特征值的极值出现在预定时间差内时，检测点; 在检测到所述点之后，检测所述第一特征值或所述第二特征值的预定极值点; 以及基于当检测到所述预定极值点时的点来确定抛光终点。

公开(公告)号：US09068814B2

公开(公告)日：2015-06-30

申请号：US12285674

申请日：2008-10-10

申请人： Taro Takahashi ,  Yoichi Kobayashi ,  Shinrou Ohta ,  Akihiko Ogawa

发明人： Taro Takahashi ,  Yoichi Kobayashi ,  Shinrou Ohta ,  Akihiko Ogawa

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.

摘要翻译： 一种方法使用涡流传感器监测与抛光垫的抛光表面滑动接触的导电膜的厚度变化。 涡电流传感器的输出信号包括对应于包括涡流传感器的线圈的电路的阻抗的电阻分量和电抗分量的两个信号。 该方法包括当涡流传感器面向导电膜时获取涡流传感器的输出信号，将两个信号定义为坐标系上的坐标，重复获取输出信号和定义坐标，确定 由坐标系上的至少三组坐标指定的圆弧的曲率中心，确定连接曲率中心的直线和最小三个坐标系中的最近一个的线的倾斜角度， 通过监测倾斜角度的变化来确定导电膜的厚度。

公开(公告)号：US07214122B2

公开(公告)日：2007-05-08

申请号：US11274112

申请日：2005-11-16

申请人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

发明人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  H01L21/30625

摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

摘要翻译： 基板抛光装置用于将诸如半导体晶片的基板的表面抛光到平面镜面。 基板研磨装置具有安装在研磨台上的用于研磨半导体基板的研磨台和研磨垫。 抛光垫在其中形成有通孔。 基板研磨装置还具有发光和接收装置，用于通过形成在抛光垫中的通孔将测量光发射到半导体衬底并接收来自半导体衬底的反射光，以测量半导体衬底上的膜。 发光和接收装置设置在抛光台中。 衬底抛光装置包括用于将流体供应到测量光的路径的供给通道。 供给通道具有可拆卸地安装在抛光台上的出口部分。 衬底抛光装置还包括安装在抛光台上并当抛光垫附接到抛光台时装配到通孔中的保护盖。

公开(公告)号：US07507144B2

公开(公告)日：2009-03-24

申请号：US11727727

申请日：2007-03-28

申请人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

发明人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  H01L21/30625

摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

摘要翻译： 基板抛光装置用于将诸如半导体晶片的基板的表面抛光到平面镜面。 基板研磨装置具有安装在研磨台上的用于研磨半导体基板的研磨台和研磨垫。 抛光垫在其中形成有通孔。 基板研磨装置还具有发光和接收装置，用于通过形成在抛光垫中的通孔将测量光发射到半导体衬底并接收来自半导体衬底的反射光，以测量半导体衬底上的膜。 发光和接收装置设置在抛光台中。 衬底抛光装置包括用于将流体供应到测量光的路径的供给通道。 供给通道具有可拆卸地安装在抛光台上的出口部分。 衬底抛光装置还包括安装在抛光台上并当抛光垫附接到抛光台时装配到通孔中的保护盖。