公开(公告)号：US20120091414A1

公开(公告)日：2012-04-19

申请号：US13052143

申请日：2011-03-21

申请人： Yoko IWAKAJI ,  Jun Hirota ,  Moto Yabuki ,  Wakana Kai ,  Hirokazu Ishida ,  Ichiro Mizushima

发明人： Yoko IWAKAJI ,  Jun Hirota ,  Moto Yabuki ,  Wakana Kai ,  Hirokazu Ishida ,  Ichiro Mizushima

IPC分类号： H01L47/00 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/045 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/685 ,  H01L29/868 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/16 ,  H01L45/1675

摘要： According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation.

摘要翻译： 根据一个实施例，半导体器件包括多个硅膜。 多个硅膜设置在一个平面上，由含有杂质的多晶硅制成。 每个硅膜的晶体取向为（311）取向。

公开(公告)号：US08558354B2

公开(公告)日：2013-10-15

申请号：US13052143

申请日：2011-03-21

申请人： Yoko Iwakaji ,  Jun Hirota ,  Moto Yabuki ,  Wakana Kai ,  Hirokazu Ishida ,  Ichiro Mizushima

发明人： Yoko Iwakaji ,  Jun Hirota ,  Moto Yabuki ,  Wakana Kai ,  Hirokazu Ishida ,  Ichiro Mizushima

IPC分类号： H01L29/04

CPC分类号： H01L29/045 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/685 ,  H01L29/868 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/16 ,  H01L45/1675

摘要： According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation.

摘要翻译： 根据一个实施例，半导体器件包括多个硅膜。 多个硅膜设置在一个平面上，由含有杂质的多晶硅制成。 每个硅膜的晶体取向为（311）取向。

公开(公告)号：US20090004833A1

公开(公告)日：2009-01-01

申请号：US12146802

申请日：2008-06-26

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US07651930B2

公开(公告)日：2010-01-26

申请号：US12146802

申请日：2008-06-26

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US07863166B2

公开(公告)日：2011-01-04

申请号：US12646563

申请日：2009-12-23

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US20080211004A1

公开(公告)日：2008-09-04

申请号：US12040224

申请日：2008-02-29

申请人： Yoshio OZAWA ,  Ichiro Mizushima ,  Takashi Suzuki ,  Hirokazu Ishida ,  Yoshitaka Tsunashima

发明人： Yoshio OZAWA ,  Ichiro Mizushima ,  Takashi Suzuki ,  Hirokazu Ishida ,  Yoshitaka Tsunashima

IPC分类号： H01L29/32 ,  H01L21/20

CPC分类号： H01L29/788 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/04

摘要： A semiconductor device includes a silicon crystal layer on an insulating layer, the silicon crystal layer containing a crystal lattice mismatch plane, a memory cell array portion on the silicon crystal layer, the memory cell array portion including memory strings, each of the memory strings including nonvolatile memory cell transistors connected in series in a first direction, the memory strings being arranged in a second direction orthogonal to the first direction, the crystal lattice mismatch plane crossing the silicon crystal along the second direction without passing under gates of the nonvolatile memory cell transistors as viewed from a top of the silicon crystal layer, or crossing the silicon crystal along the first direction with passing under gates of the nonvolatile memory cell transistors as viewed from the top of the silicon crystal layer.

摘要翻译： 半导体器件包括绝缘层上的硅晶体层，含有晶格失配平面的硅晶体层，硅晶体层上的存储单元阵列部分，存储单元阵列部分包括存储器串，每个存储器串包括 所述非易失性存储单元晶体管沿第一方向串联连接，所述存储器串沿与所述第一方向正交的第二方向布置，所述晶格失配面沿着所述第二方向与所述硅晶体交叉，而不通过所述非易失性存储单元晶体管的栅极 从硅晶体层的顶部观察，或者从硅晶体层的顶部观察时沿着非易失性存储单元晶体管的栅极通过硅晶体沿第一方向。

公开(公告)号：US07879658B2

公开(公告)日：2011-02-01

申请号：US12040224

申请日：2008-02-29

申请人： Yoshio Ozawa ,  Ichiro Mizushima ,  Takashi Suzuki ,  Hirokazu Ishida ,  Yoshitaka Tsunashima

发明人： Yoshio Ozawa ,  Ichiro Mizushima ,  Takashi Suzuki ,  Hirokazu Ishida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/00 ,  H01L29/04

CPC分类号： H01L29/788 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/04

摘要： A semiconductor device includes a silicon crystal layer on an insulating layer, the silicon crystal layer containing a crystal lattice mismatch plane, a memory cell array portion on the silicon crystal layer, the memory cell array portion including memory strings, each of the memory strings including nonvolatile memory cell transistors connected in series in a first direction, the memory strings being arranged in a second direction orthogonal to the first direction, the crystal lattice mismatch plane crossing the silicon crystal along the second direction without passing under gates of the nonvolatile memory cell transistors as viewed from a top of the silicon crystal layer, or crossing the silicon crystal along the first direction with passing under gates of the nonvolatile memory cell transistors as viewed from the top of the silicon crystal layer.

摘要翻译： 半导体器件包括绝缘层上的硅晶体层，含有晶格失配平面的硅晶体层，硅晶体层上的存储单元阵列部分，存储单元阵列部分包括存储器串，每个存储器串包括 所述非易失性存储单元晶体管沿第一方向串联连接，所述存储器串沿与所述第一方向正交的第二方向布置，所述晶格失配面沿着所述第二方向与所述硅晶体交叉，而不通过所述非易失性存储单元晶体管的栅极 从硅晶体层的顶部观察，或者从硅晶体层的顶部观察时沿着非易失性存储单元晶体管的栅极通过硅晶体沿第一方向。

公开(公告)号：US07842564B2

公开(公告)日：2010-11-30

申请号：US12167695

申请日：2008-07-03

申请人： Ichiro Mizushima ,  Hirokazu Ishida ,  Yoshio Ozawa ,  Takashi Suzuki ,  Fumiki Aiso ,  Makoto Mizukami

发明人： Ichiro Mizushima ,  Hirokazu Ishida ,  Yoshio Ozawa ,  Takashi Suzuki ,  Fumiki Aiso ,  Makoto Mizukami

IPC分类号： H01L21/84

CPC分类号： H01L27/11521 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02667 ,  H01L21/7624 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/66825

摘要： In a method of manufacturing a semiconductor memory device, an opening is made in a part of an insulating film formed on a silicon substrate. An amorphous silicon thin film is formed on the insulating film in which the opening has been made and inside the opening. Then, a monocrystal is solid-phase-grown in the amorphous silicon thin film, with the opening as a seed, thereby forming a monocrystalline silicon layer. Then, the monocrystalline silicon layer is heat-treated in an oxidizing atmosphere, thereby thinning the monocrystalline silicon layer and reducing the defect density. Then, a memory cell array is formed on the monocrystalline silicon layer which has been thinned and whose defect density has been reduced.

摘要翻译： 在制造半导体存储器件的方法中，在形成于硅衬底上的绝缘膜的一部分上形成开口。 在已经形成开口的绝缘膜和开口内部形成非晶硅薄膜。 然后，将单晶在非晶硅薄膜中固相生长，以开口为种子，由此形成单晶硅层。 然后，在氧化气氛中对单晶硅层进行热处理，从而使单晶硅层变薄并降低缺陷密度。 然后，在已经变薄的缺陷密度降低的单晶硅层上形成存储单元阵列。

公开(公告)号：US20100112791A1

公开(公告)日：2010-05-06

申请号：US12646563

申请日：2009-12-23

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US20090121279A1

公开(公告)日：2009-05-14

申请号：US12249354

申请日：2008-10-10

申请人： Hirokazu Ishida ,  Takashi Suzuki ,  Yoshio Ozawa ,  Ichiro Mizushima ,  Yoshitaka Tsunashima

发明人： Hirokazu Ishida ,  Takashi Suzuki ,  Yoshio Ozawa ,  Ichiro Mizushima ,  Yoshitaka Tsunashima

IPC分类号： H01L21/20 ,  H01L29/786

CPC分类号： H01L27/11521 ,  H01L21/84 ,  H01L27/11524 ,  H01L27/1203

摘要： A semiconductor device includes a single crystal silicon substrate an insulating layer partially formed on the single crystal silicon substrate, a single crystal silicon layer formed on the single crystal silicon substrate and the insulating layer, and containing a defect layer resulting from an excessive group IV element, and a plurality of first gate structures for memory cells, each including a first gate insulating film formed on the single crystal silicon layer, a charge storage layer formed on the first gate insulating film, a second gate insulating film formed on the charge storage layer, and a control gate electrode formed on the second gate insulating film.

摘要翻译： 半导体器件包括单晶硅衬底，部分地形成在单晶硅衬底上的绝缘层，形成在单晶硅衬底上的单晶硅层和绝缘层，并且包含由过量IV族元素产生的缺陷层 以及多个用于存储单元的第一栅极结构，每个包括形成在单晶硅层上的第一栅极绝缘膜，形成在第一栅极绝缘膜上的电荷存储层，形成在电荷存储层上的第二栅极绝缘膜 以及形成在第二栅极绝缘膜上的控制栅电极。