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    APPARATUS FOR DRIVING ARTIFICIAL RETINA USING MEDIUM-RANGE WIRELESS POWER TRANSMISSION TECHNIQUE
    1.
    发明申请
    APPARATUS FOR DRIVING ARTIFICIAL RETINA USING MEDIUM-RANGE WIRELESS POWER TRANSMISSION TECHNIQUE 审中-公开
    使用中等无线电力传输技术驱动人为故障的设备

    公开(公告)号：US20100094381A1

    公开(公告)日：2010-04-15

    申请号：US12477908

    申请日：2009-06-04

    申请人： Yong Hae KIM ,  Seung Youl KANG ,  Byoung Gon YU

    发明人： Yong Hae KIM ,  Seung Youl KANG ,  Byoung Gon YU

    IPC分类号： A61F9/08 ,  A61F2/14 ,  A61N1/36

    CPC分类号： A61N1/0543 ,  A61N1/36046 ,  A61N1/37229 ,  A61N1/3787

    摘要： Provided is an apparatus for driving an artificial retina using a medium-range power transmission technique. The apparatus can wirelessly transmit power to an artificial retina circuit within a medium range of about 1 m using resonance between a first coil equipped around a user's waist and a second coil implanted in a user's eye. Thus, it is possible to solve the difficulty of implanting a coil in a lens, provide convenience to a user by eliminating the necessity of artificial glasses, and stably supply power to the artificial retina circuit. In addition, it is possible to remarkably lessen the difficulty in connecting the second coil with the artificial retina circuit in an eye.

    摘要翻译： 提供了一种使用中程电力传输技术来驱动人造视网膜的装置。 该装置可以使用围绕用户腰围的第一线圈与植入用户眼睛的第二线圈之间的共振，将功率无线地传输到大约1m的中等范围内的人造视网膜电路。 因此，可以解决在镜片中植入线圈的困难，通过消除人造眼镜的需要，并且稳定地向人造视网膜电路供电，为用户提供便利。 此外，可以显着地减轻在眼睛中将第二线圈与人造视网膜电路连接的难度。

    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20100012915A1

    公开(公告)日：2010-01-21

    申请号：US12425152

    申请日：2009-04-16

    申请人： Sung Min YOON ,  Byoung Gon YU ,  Soon Won JUNG ,  Seung Yun LEE ,  Young Sam PARK ,  Joon Suk LEE

    发明人： Sung Min YOON ,  Byoung Gon YU ,  Soon Won JUNG ,  Seung Yun LEE ,  Young Sam PARK ,  Joon Suk LEE

    IPC分类号： H01L47/00 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

    摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

    摘要翻译： 提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。 相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层， 形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。 作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

    ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
    有源矩阵有机发光二极管及其制造方法

    公开(公告)号：US20120168761A1

    公开(公告)日：2012-07-05

    申请号：US13343384

    申请日：2012-01-04

    申请人： Sang Hee PARK ,  Chi Sun HWANG ,  Byoung Gon YU

    发明人： Sang Hee PARK ,  Chi Sun HWANG ,  Byoung Gon YU

    IPC分类号： H01L29/786 ,  H01L33/50

    CPC分类号： H01L51/5284 ,  H01L27/1218 ,  H01L27/322 ,  H01L27/326 ,  H01L29/78633 ,  H01L29/7869

    摘要： Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

    摘要翻译： 公开了有源矩阵有机发光二极管及其制造方法。 有源矩阵有机发光二极管包括：基板; 形成在基板的一部分上方的黑色矩阵; 形成在黑矩阵上方的至少一个薄膜晶体管; 形成为完全覆盖所述至少一个薄膜晶体管的钝化膜; 形成在钝化膜上方的平坦化层; 形成在所述平坦化层的与形成有所述至少一个薄膜晶体管的位置相反的上方的滤色器; 以及形成在滤色器上方的有机发光二极管。

    PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE
    7.
    发明申请
    PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE 有权
    使用相变存储器件的FPGA的可编程逻辑块

    公开(公告)号：US20100148821A1

    公开(公告)日：2010-06-17

    申请号：US12633731

    申请日：2009-12-08

    申请人： Byoung Gon YU ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    发明人： Byoung Gon YU ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    IPC分类号： H03K19/177 ,  H03K19/0948

    CPC分类号： H03K19/17784 ,  H03K19/17728 ,  H03K19/17792

    摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.

    摘要翻译： 提供了现场可编程门阵列（FPGA）的可编程逻辑块。 可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件 存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。 上变相存储器件和下变相存储器件的电阻值被单独编程。