摘要:
A method for manufacturing a cell capacitor includes a step of forming an upper electrode and a trench for the lower electrode simultaneously in a single mask step. Further steps for manufacturing a cell capacitor includes forming a storage node contact by employing a predefined plate silicon layer and forming a capacitor dielectric using the storage contact node, as a result, it becomes possible to resolve “lift-off” problems, twin-bit failures, and misalignment.
摘要:
A method for manufacturing a cell capacitor includes a step of forming an upper electrode and a trench for the lower electrode simultaneously in a single mask step. Further steps for manufacturing a cell capacitor includes forming a storage node contact by employing a predefined plate silicon layer and forming a capacitor dielectric using the storage contact node, as a result, it becomes possible to resolve “lift-off” problems, twin-bit failures, and misalignment.
摘要:
A self-aligned contact structure in a semiconductor device and methods for making such contact structure wherein the semiconductor device has a semiconductor substrate having active regions, an interlayer insulating layer covering the semiconductor substrate excluding at least a portion of each active region, at least two parallel interconnections on the interlayer insulating layer, at least one active region being relatively disposed between the at least two parallel interconnections, each interconnection having sidewalls, bottom and a width (x), a mask pattern having a top portion (z) and a bottom portion (y) formed on each interconnection, and a conductive layer pattern penetrating at least a portion of the interlayer insulating layer between the mask pattern and being electrically connected to at least one active region, wherein: x≦y≦z and x
摘要翻译:半导体器件中的自对准接触结构以及用于制造这种接触结构的方法,其中半导体器件具有具有有源区的半导体衬底,覆盖半导体衬底的层间绝缘层,不包括每个有源区的至少一部分,至少两个 所述层间绝缘层上的平行互连,至少一个有源区相对设置在所述至少两个平行互连之间,每个互连具有侧壁,底部和宽度(x),具有顶部(z)和底部 形成在每个互连上的部分(y),以及穿透掩模图案之间的层间绝缘层的至少一部分并且与至少一个有源区电连接的导电层图案,其中:x <= y <= z和x
摘要:
A self-aligned contact structure in a semiconductor device and methods of forming the same are provided, wherein the self-aligned contact structure in the semiconductor device comprises a semiconductor substrate having active regions; an interlayer insulating layer covering the semiconductor substrate excluding at least a portion of each active region; at least two parallel interconnections on the interlayer insulating layer, at least one active region being relatively disposed between the at least two parallel interconnections, each interconnection having sidewalls, a bottom and a width (x); a mask pattern having a top portion of width (z) and a bottom portion of width (y) formed on each interconnection; and a conductive layer pattern penetrating at least a portion of the interlayer insulating layer between the mask pattern and being electrically connected to at least one active region, wherein x≦y≦z and x
摘要翻译:提供半导体器件中的自对准接触结构及其形成方法,其中半导体器件中的自对准接触结构包括具有有源区的半导体衬底; 覆盖半导体衬底的层间绝缘层,所述层间绝缘层不包括每个有源区的至少一部分; 在所述层间绝缘层上的至少两个平行互连,至少一个有源区相对设置在所述至少两个平行互连之间,每个互连具有侧壁,底部和宽度(x); 具有形成在每个互连上的宽度(z)的顶部和宽度(y)的底部的掩模图案; 以及导电层图案,其穿透所述掩模图案之间的所述层间绝缘层的至少一部分并与至少一个有源区电连接,其中x <= y
摘要:
A DRAM cell is provided, along with a method for fabricating such a DRAM cell. A protection layer pattern is formed to cover a common drain region of first and second access transistors. Storage node holes are then formed to expose each source region of the first and second access transistors, by using an etching insulator that has an etching selectivity with respect to the protection layer. Accordingly, even if there is a misalignment of the storage node holes to the source regions, the common drain region is not exposed by the misaligned storage node holes because of the presence of the protection layer pattern.
摘要:
A DRAM cell is provided, along with a method for fabricating such a DRAM cell. A protection layer pattern is formed to cover a common drain region of first and second access transistors. Storage node holes are then formed to expose each source region of the first and second access transistors, by using an etching insulator that has an etching selectivity with respect to the protection layer. Accordingly, even if there is a misalignment of the storage node holes to thesource regions, the common drain region is not exposed by the misaligned storage node holes because of the presence of the protection layer pattern.
摘要:
Self-aligned contacts in integrated circuits can be formed on an integrated circuit substrate having an active region. A groove can be formed in the insulating layer and a conductive material can be formed in the groove to a level that is recessed in the groove. An insulating material can be formed in the groove on the conductive material that has an etch selectivity with respect to the insulating layer. A contact that is self-aligned to the active region can be then be formed.
摘要:
A storage element of a stacked capacitor having a high dielectric film for a semiconductor device and a method of fabricating the same, the storage element having a storage node comprising a bottom polysilicon layer, a barrier metal layer, and a transition metal layer with sidewall spacers formed on the barrier metal layer. The barrier metal layer and sidewall spacers prevent the polysilicon layer from being oxidized. The polysilicon layer is formed to a thickness that determines the height of the storage node. The transition metal layer directly interfacing the high dielectric film is thinly formed to avoid slope etching thereof and thereby prevent electrical bridges or shorts between adjacent storage nodes.
摘要:
A semiconductor device and a method for making a semiconductor device having a pillar-shaped capacitor storage node compatible with a high dielectric film, wherein the pillar shaped capacitor storage node includes a thick conductive metal layer that is easily etched and a thin conductive layer completely coating the thick conductive metal layer. The thin conductive layer protects the thick conductive metal layer during subsequent high dielectric deposition and annealing and various oxidation process.
摘要:
A semiconductor device and a method for making a semiconductor device having a pillar-shaped capacitor storage node compatible with a high dielectric film, wherein the pillar-shaped capacitor storage node includes a thick conductive metal layer that is easily etched and a thin conductive layer completely coating the thick conductive metal layer. The thin conductive layer protects the thick conductive metal layer during subsequent high dielectric deposition and annealing and various oxidation process.