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47 条记录 (耗时 0.028 秒)

    Phase change memory device and method for forming the same
    1.
    发明申请
    Phase change memory device and method for forming the same 有权
    相变存储器件及其形成方法

    公开(公告)号：US20060011902A1

    公开(公告)日：2006-01-19

    申请号：US11149755

    申请日：2005-06-10

    申请人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    发明人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  G11C2213/52 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1683 ,  Y10S438/90

    摘要： A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

    摘要翻译： 相变存储器件包括设置在基板上的模具层，加热电极，填充绝缘图案和相变材料图案。 加热电极设置在使基板穿过模具层的开口中。 加热电极形成为大致圆筒形，其侧壁共形地设置在开口的下内壁上。 填充绝缘图案填充由加热电极的侧壁围绕的空白区域。 相变材料图案设置在模具层上并向下延伸以填充开口的空的部分。 相变材料图案接触加热电极的侧壁的顶表面。

    Phase change memory device and method for forming the same
    3.
    发明申请
    Phase change memory device and method for forming the same 失效
    相变存储器件及其形成方法

    公开(公告)号：US20080173862A1

    公开(公告)日：2008-07-24

    申请号：US12008125

    申请日：2008-01-09

    申请人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    发明人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  G11C2213/52 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1683 ,  Y10S438/90

    摘要： A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

    摘要翻译： 相变存储器件包括设置在基板上的模具层，加热电极，填充绝缘图案和相变材料图案。 加热电极设置在使基板穿过模具层的开口中。 加热电极形成为大致圆筒形，其侧壁共形地设置在开口的下内壁上。 填充绝缘图案填充由加热电极的侧壁围绕的空白区域。 相变材料图案设置在模具层上并向下延伸以填充开口的空的部分。 相变材料图案接触加热电极的侧壁的顶表面。

    Phase change memory device
    4.
    发明授权
    Phase change memory device 失效
    相变存储器件

    公开(公告)号：US07888667B2

    公开(公告)日：2011-02-15

    申请号：US12008125

    申请日：2008-01-09

    申请人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    发明人： Yoon-Jong Song ,  Se-Ho Lee ,  Ki-Nam Kim ,  Su-Youn Lee ,  Jae-Hyun Park

    IPC分类号： H01L47/00 ,  H01L21/00 ,  G11C11/00

    CPC分类号： H01L45/06 ,  G11C2213/52 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1683 ,  Y10S438/90

    摘要： A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

    摘要翻译： 相变存储器件包括设置在基板上的模具层，加热电极，填充绝缘图案和相变材料图案。 加热电极设置在使基板穿过模具层的开口中。 加热电极形成为大致圆筒形，其侧壁共形地设置在开口的下内壁上。 填充绝缘图案填充由加热电极的侧壁围绕的空白区域。 相变材料图案设置在模具层上并向下延伸以填充开口的空的部分。 相变材料图案接触加热电极的侧壁的顶表面。

    Phase-change memory device having a barrier layer and manufacturing method
    5.
    发明申请
    Phase-change memory device having a barrier layer and manufacturing method 审中-公开
    具有阻挡层的相变存储器件和制造方法

    公开(公告)号：US20050263801A1

    公开(公告)日：2005-12-01

    申请号：US11086246

    申请日：2005-03-21

    申请人： Jae-Hyun Park ,  Sung-Min Kim ,  Yoon-Jong Song ,  Su-Youn Lee ,  Young-Nam Hwang

    发明人： Jae-Hyun Park ,  Sung-Min Kim ,  Yoon-Jong Song ,  Su-Youn Lee ,  Young-Nam Hwang

    IPC分类号： H01L21/8234 ,  H01L27/24 ,  H01L29/772

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    摘要： A semiconductor device comprises a semiconductor substrate having an isolation region that defines an active region. The active region has a planar surface and a non-planar surface that extends from the planar surface. The device further includes a gate dielectric layer covering the non-planar surface and a first gate electrode extending across the non-planar surface with the gate dielectric layer therebetween. In addition, a source and drain region are formed on opposite sides of the gate electrode. According to an aspect of the present invention, the resulting device has a non-planar channel region extending between the source region and the drain region. The non-planar channel region is formed along the non-planar surface described above. Further, programmable resistance element is electrically coupled to the drain region to form a phase-change memory device.

    摘要翻译： 半导体器件包括具有限定有源区的隔离区的半导体衬底。 有源区具有从平面表面延伸的平坦表面和非平面表面。 该器件还包括覆盖非平面表面的栅极电介质层和跨过非平面表面延伸的第一栅电极，其间具有栅介电层。 此外，源极和漏极区域形成在栅电极的相对侧上。 根据本发明的一个方面，所得到的器件具有在源极区域和漏极区域之间延伸的非平面沟道区域。 非平面通道区沿着上述非平面形成。 此外，可编程电阻元件电耦合到漏极区以形成相变存储器件。

    Methods for forming electronic devices including capacitor structures
    10.
    发明授权
    Methods for forming electronic devices including capacitor structures 失效
    用于形成包括电容器结构的电子器件的方法

    公开(公告)号：US06911362B2

    公开(公告)日：2005-06-28

    申请号：US10635195

    申请日：2003-08-06

    申请人： Ki-Nam Kim ,  Yoon-Jong Song ,  Heung-Jin Joo

    发明人： Ki-Nam Kim ,  Yoon-Jong Song ,  Heung-Jin Joo

    IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/8242

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： Methods for forming an electronic device can include forming a capacitor structure on a portion of a substrate with the capacitor structure including a first electrode on the substrate, a capacitor dielectric on the first electrode, a second electrode on the dielectric, and a hard mask on the second electrode. More particularly, the capacitor dielectric can be between the first and second electrodes, the first electrode and the capacitor dielectric can be between the second electrode and the substrate, and the first and second electrodes and the capacitor dielectric can be between the hard mask and the substrate. An interlayer dielectric layer can be formed on the hard mask and on portions of the substrate surrounding the capacitor structure, and portions of the interlayer dielectric layer can be removed to expose the hard mask while maintaining portions of the interlayer dielectric layer on portions of the substrate surrounding the capacitor structure. The hard mask can then be removed thereby exposing portions of the second electrode while maintaining the portions of the interlayer dielectric layer on portions of the substrate surrounding the capacitor.

    摘要翻译： 用于形成电子器件的方法可以包括在衬底的一部分上形成电容器结构，其中电容器结构包括在衬底上的第一电极，第一电极上的电容器电介质，电介质上的第二电极， 第二电极。 更具体地，电容器电介质可以在第一和第二电极之间，第一电极和电容器电介质可以在第二电极和衬底之间，并且第一和第二电极和电容器电介质可以在硬掩模和第二电极之间 基质。 可以在硬掩模和围绕电容器结构的基板的部分上形成层间电介质层，并且可以去除层间介电层的部分以暴露硬掩模，同时将层间电介质层的部分保持在基板的部分上 围绕电容器结构。 然后可以去除硬掩模，从而暴露第二电极的部分，同时保持层间电介质层的部分在包围电容器的基板的部分上。