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    Solid-state imaging device
    4.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US08598640B2

    公开(公告)日：2013-12-03

    申请号：US13211362

    申请日：2011-08-17

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
    5.
    发明授权
    Solid-state imaging device, manufacturing method and designing method thereof, and electronic device 有权
    固态成像装置及其制造方法及其设计方法以及电子装置

    公开(公告)号：US08558158B2

    公开(公告)日：2013-10-15

    申请号：US12915638

    申请日：2010-10-29

    申请人： Kyoko Izuha ,  Hiromi Okazaki ,  Yoshiaki Kitano

    发明人： Kyoko Izuha ,  Hiromi Okazaki ,  Yoshiaki Kitano

    IPC分类号： H01L27/148 ,  H01L31/0232

    CPC分类号： H01L31/0232 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

    摘要： A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.

    摘要翻译： 固体摄像器件包括半导体衬底，光电二极管，第一绝缘膜，第二绝缘膜，第三绝缘膜和滤色器。 光电二极管设置在半导体衬底上。 第一绝缘膜覆盖半导体衬底上的多层布线。 第一绝缘膜包括至少第一绝缘膜的底表面和顶表面部分具有低于半导体衬底的折射率的第一折射率的材料。 第二绝缘膜具有比第一折射率高的第二折射率。 第三绝缘膜具有比第二折射率高的第三折射率。

    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND IMAGING UNIT
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND IMAGING UNIT 有权
    固态成像装置及其制造方法及成像装置

    公开(公告)号：US20130088713A1

    公开(公告)日：2013-04-11

    申请号：US13604155

    申请日：2012-09-05

    申请人： Yoshiaki Kitano

    发明人： Yoshiaki Kitano

    IPC分类号： G01J1/42

    CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14818 ,  H01L27/14843

    摘要： A solid-state imaging device includes a light sensing unit generating a signal charge by performing a photoelectric conversion of an incident light; a conductive material in the vicinity of the light sensing unit; a first light-shielding film formed to cover at least a portion of the conductive material; and a second light-shielding film formed on a part of or all of a surface of the first light-shielding film.

    摘要翻译： 固态成像装置包括通过执行入射光的光电转换来产生信号电荷的光感测单元; 在感光单元附近的导电材料; 形成为覆盖所述导电材料的至少一部分的第一遮光膜; 以及形成在第一遮光膜的表面的一部分或全部上的第二遮光膜。

    Solid-state imaging device and manufacturing method of the same, and imaging unit
    8.
    发明授权
    Solid-state imaging device and manufacturing method of the same, and imaging unit 有权
    固态成像装置及其制造方法及成像单元

    公开(公告)号：US09252173B2

    公开(公告)日：2016-02-02

    申请号：US13604155

    申请日：2012-09-05

    申请人： Yoshiaki Kitano

    发明人： Yoshiaki Kitano

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14818 ,  H01L27/14843

    摘要： A solid-state imaging device includes a light sensing unit generating a signal charge by performing a photoelectric conversion of an incident light; a conductive material in the vicinity of the light sensing unit; a first light-shielding film formed to cover at least a portion of the conductive material; and a second light-shielding film formed on a part of or all of a surface of the first light-shielding film.

    摘要翻译： 固态成像装置包括通过执行入射光的光电转换来产生信号电荷的光感测单元; 在感光单元附近的导电材料; 形成为覆盖所述导电材料的至少一部分的第一遮光膜; 以及形成在第一遮光膜的表面的一部分或全部上的第二遮光膜。