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    Method of manufacturing a solar cell module and apparatus of manufacturing a solar cell module
    1.
    发明授权
    Method of manufacturing a solar cell module and apparatus of manufacturing a solar cell module 有权
    制造太阳能电池模块的方法和制造太阳能电池组件的装置

    公开(公告)号：US08822255B2

    公开(公告)日：2014-09-02

    申请号：US13393654

    申请日：2010-08-30

    申请人： Yoshiaki Yamamoto ,  Hitoshi Ikeda ,  Tomoki Ohnishi ,  Kouichi Tamagawa

    发明人： Yoshiaki Yamamoto ,  Hitoshi Ikeda ,  Tomoki Ohnishi ,  Kouichi Tamagawa

    IPC分类号： H01L31/18

    CPC分类号： B23K26/36 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/18 ,  Y02E10/50

    摘要： A method of manufacturing a solar cell, which includes an edge deletion step using a laser beam, and a manufacturing apparatus which is used in such a method, the method and the apparatus being capable of preventing a shunt and cracks from being generated are provided. By radiating a first laser beam to a multilayer body, which includes a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer sequentially formed on a transparent substrate, from a side of the transparent substrate, the photoelectric conversion layer and the back electrode layer in a first region are removed, and by radiating a second laser beam into the region such that the second laser beam is spaced from a peripheral rim of the region, the transparent electrode layer in a second region is removed.

    摘要翻译： 提供一种制造太阳能电池的方法，其包括使用激光束的边缘删除步骤以及在这种方法中使用的制造装置，能够防止分流和裂纹产生的方法和装置。 通过将第一激光束照射到多层体，其包括从透明基板侧，光电转换层和背面的透明基板上依次形成的透明电极层，光电转换层和背面电极层 去除第一区域中的电极层，并且通过将第二激光束照射到该区域中，使得第二激光束与该区域的外围边缘间隔开，从而去除第二区域中的透明电极层。

    METHOD OF MANUFACTURING A SOLAR CELL MODULE AND APPARATUS OF MANUFACTURING A SOLAR CELL MODULE
    2.
    发明申请
    METHOD OF MANUFACTURING A SOLAR CELL MODULE AND APPARATUS OF MANUFACTURING A SOLAR CELL MODULE 有权
    制造太阳能电池模块的方法和制造太阳能电池模块的装置

    公开(公告)号：US20120238048A1

    公开(公告)日：2012-09-20

    申请号：US13393654

    申请日：2010-08-30

    申请人： Yoshiaki Yamamoto ,  Hitoshi Ikeda ,  Tomoki Ohnishi ,  Kouichi Tamagawa

    发明人： Yoshiaki Yamamoto ,  Hitoshi Ikeda ,  Tomoki Ohnishi ,  Kouichi Tamagawa

    IPC分类号： H01L31/18

    CPC分类号： B23K26/36 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/18 ,  Y02E10/50

    摘要： A method of manufacturing a solar cell, which includes an edge deletion step using a laser beam, and a manufacturing apparatus which is used in such a method, the method and the apparatus being capable of preventing a shunt and cracks from being generated are provided. By radiating a first laser beam to a multilayer body, which includes a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer sequentially formed on a transparent substrate, from a side of the transparent substrate, the photoelectric conversion layer and the back electrode layer in a first region are removed, and by radiating a second laser beam into the region such that the second laser beam is spaced from a peripheral rim of the region, the transparent electrode layer in a second region is removed.

    摘要翻译： 提供一种制造太阳能电池的方法，其包括使用激光束的边缘删除步骤以及在这种方法中使用的制造装置，能够防止分流和裂纹产生的方法和装置。 通过将第一激光束照射到多层体，其包括从透明基板侧，光电转换层和背面的透明基板上依次形成的透明电极层，光电转换层和背面电极层 去除第一区域中的电极层，并且通过将第二激光束照射到该区域中，使得第二激光束与该区域的外围边缘间隔开，从而去除第二区域中的透明电极层。

    Processing system, robot, and product manufacturing method
    3.
    发明授权
    Processing system, robot, and product manufacturing method 有权
    加工系统，机器人和产品制造方法

    公开(公告)号：US09037289B2

    公开(公告)日：2015-05-19

    申请号：US13252353

    申请日：2011-10-04

    申请人： Takashi Suyama ,  Junichi Imatome ,  Toru Kajiwara ,  Yoshiaki Yamamoto

    发明人： Takashi Suyama ,  Junichi Imatome ,  Toru Kajiwara ,  Yoshiaki Yamamoto

    IPC分类号： G06F7/00 ,  B65B5/10 ,  B25J9/00 ,  B65B5/08 ,  B65B35/18 ,  B65B43/46 ,  B65B55/20

    CPC分类号： B65B5/105 ,  B25J9/0084 ,  B25J9/0087 ,  B25J9/0093 ,  B65B5/08 ,  B65B35/18 ,  B65B43/46 ,  B65B55/20

    摘要： A processing system according to embodiments has an article supplier which supplies an article; a first conveyor which conveys an object to be processed; a workbench which is provided on the downstream side of the first conveyor and places thereon the object to be processed, conveyed by the first conveyor; a robot which takes out the article from the article supplier and subjects the object to be processed, placed on the workbench, to an operation using the article according to a previously instructed operation movement; and a second conveyor which is provided on the downstream side of the workbench and conveys the object to be processed, which has been subjected to the operation by the robot.

    摘要翻译： 根据实施例的处理系统具有供应物品的物品供应商; 传送待加工物体的第一输送机; 工作台，其设置在第一输送机的下游侧，并在其上放置由第一输送机输送的待处理物体; 机器人，其从文章供应商取出物品，并将放置在工作台上的待处理物体根据先前指示的操作运动进行使用该物品的操作; 以及设置在工作台的下游侧并输送被机器人进行了操作的待处理物体的第二输送机。

    Semiconductor device and its manufacturing method
    5.
    发明授权
    Semiconductor device and its manufacturing method 有权
    半导体器件及其制造方法

    公开(公告)号：US08304313B2

    公开(公告)日：2012-11-06

    申请号：US10585128

    申请日：2005-08-12

    申请人： Koichiro Tanaka ,  Atsuo Isobe ,  Yoshiaki Yamamoto

    发明人： Koichiro Tanaka ,  Atsuo Isobe ,  Yoshiaki Yamamoto

    IPC分类号： H01L21/8236

    CPC分类号： H01L29/78648 ,  B23K26/0604 ,  B23K26/066 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2029/7863

    摘要： It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.

    摘要翻译： 本发明的目的是提供一种激光照射装置和方法，该激光照射装置和方法可以降低整个照射区域中的微晶区域的比例，并且可以用激光束均匀地照射半导体膜。 从激光振荡器发射的激光束的低强度部分被狭缝阻挡，激光束被反射镜偏转，并且通过使用两个凸柱面透镜将光束成形为期望的尺寸。 然后，激光束被传送到照​​射表面。

    Laser irradiation method in which a distance between an irradiation object and an optical system is controlled by an autofocusing mechanism and method for manufacturing semiconductor device using the same
    6.
    发明授权
    Laser irradiation method in which a distance between an irradiation object and an optical system is controlled by an autofocusing mechanism and method for manufacturing semiconductor device using the same 有权
    通过自动聚焦机构控制照射对象与光学系统之间的距离的激光照射方法及使用其的半导体装置的制造方法

    公开(公告)号：US08022380B2

    公开(公告)日：2011-09-20

    申请号：US12850292

    申请日：2010-08-04

    申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

    发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

    IPC分类号： G01N21/86

    CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

    摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

    摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

    Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
    8.
    发明授权
    Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television 有权
    半导体装置及其制造方法，液晶电视和EL电视

    公开(公告)号：US07812355B2

    公开(公告)日：2010-10-12

    申请号：US12330055

    申请日：2008-12-08

    申请人： Hiroko Shiroguchi ,  Yoshiaki Yamamoto

    发明人： Hiroko Shiroguchi ,  Yoshiaki Yamamoto

    IPC分类号： H01L21/20

    CPC分类号： H01L27/1292 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5281

    摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.

    摘要翻译： 本发明的目的是提供一种半导体器件的制造方法，该半导体器件具有能够以微小结构降低成本并提高生产量的半导体元件，此外，还提供了一种制造液晶电视和EL电视的方法。 根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底上形成光吸收层，通过使用溶液在光吸收层上形成第一区域，通过照射光吸收产生热量 并且通过用热量加热第一区域来形成第一膜图案。

    Semiconductor device and manufacturing method of the same
    10.
    发明授权
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号：US07737053B2

    公开(公告)日：2010-06-15

    申请号：US10579239

    申请日：2005-11-16

    申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

    发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

    IPC分类号： H01L21/00

    CPC分类号： H01L21/84 ,  H01L21/268 ,  H01L21/823814 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/14618 ,  H01L29/6659 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An RTA method has a limitation on miniaturization. The RTA method needs a heating time of several seconds, and has a risk that impurities are diffused into a deep portion, since a semiconductor substrate is heated at a high temperature. Thus, the RTA method has a difficulty in responding miniaturization which is expected in the future. According to the present invention, a fundamental wave is used without putting laser light into a non-linear optical device, and laser annealing is conducted by irradiating an impurity diffusion layer with pulsed laser light having high intensity and a high repetition rate, so as to electrically activate the impurities. By the present invention, a thin layer on the surface of a silicon substrate can be partially melted to conduct activation. Further, the width of the region activated by laser-scanning once can be increased, and thus the productivity can be enhanced dramatically.

    摘要翻译： RTA方法对小型化有限制。 RTA方法需要几秒的加热时间，并且由于半导体衬底在高温下被加热，所以具有将杂质扩散到深部的风险。 因此，RTA方法难以应对未来预期的小型化。 根据本发明，在不将激光投射到非线性光学元件中的情况下使用基波，通过用具有高强度和高重复率的脉冲激光照射杂质扩散层来进行激光退火，以便 电激活杂质。 通过本发明，硅衬底表面上的薄层可以被部分熔化以进行活化。 此外，通过激光扫描一次激活的区域的宽度可以增加，从而可以显着提高生产率。