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1.发明授权Method for fabricating semiconductor laser facets using combined cleave and polish technique 失效使用组合切割和抛光技术制造半导体激光刻面的方法
公开(公告)号：US6077720A
公开(公告)日：2000-06-20
申请号：US213124
申请日：1998-12-15
IPC分类号： H01L21/301 , H01L21/304 , H01L33/02 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/323 , H01L21/00 , H01L21/46
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/028 , H01S5/32341 , Y10S438/959
摘要： A method for fabricating opto-electronic devices having a surface that includes a first mirror facet in a first semiconductor layer deposited on a wafer. The mirror facet is located in a first facet plane. In the method of the present invention, the wafer is divided along a first line to create a segment having the mirror facet located therein. The segment is fixed to a fixture that moves in relation to a dicing disk that has a first planar surface in which polishing grit is embedded. The segment is fixed to a mounting surface such that the first plane is aligned parallel to the first planar surface of the dicing disk. The dicing disk is caused to rotate while the first planar surface is in contact with the segment, but not in contact with the mounting surface, thereby polishing a surface of the segment. For opto-electronic devices that include a second mirror facet in a second facet plane, the second facet plane being parallel to the first facet plane and displaced therefrom, the wafer is also divided along the second line such that the segment also includes the second facet plane. The second mirror surface is polished by causing the dicing disk to rotate while the second planar surface is in contact with the segment along the second line. The present invention can be practiced with a conventional dicing saw.
摘要翻译： 一种用于制造具有在沉积在晶片上的第一半导体层中包括第一镜面的表面的光电器件的方法。 镜面位于第一小平面。 在本发明的方法中，沿着第一条线分割晶片以形成具有位于其中的镜面的部分。 该段被固定到相对于具有嵌入抛光砂粒的第一平坦表面的切割盘移动的夹具。 该段固定到安装表面，使得第一平面平行于切割盘的第一平面表面对准。 当第一平面与片段接触而不与安装表面接触时，切割盘旋转，从而抛光片段的表面。 对于在第二面平面中包括第二镜面的光电子器件，第二刻面平行于第一刻面并从其移位，晶片也沿第二线分割，使得该片段还包括第二刻面 飞机 第二镜面通过使切割盘旋转而第二平面与沿着第二线的片段接触而被抛光。 本发明可以用传统的切割锯来实现。
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2.发明授权P-contact for a Group III-nitride semiconductor device and method of making same 失效III族氮化物半导体器件的P接触及其制造方法公开(公告)号：US06239490B1
公开(公告)日：2001-05-29
申请号：US09021053
申请日：1998-02-09
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/32341 , H01L2924/00
摘要： A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Group III-nitride semiconductor contact layer having an exposed surface, and depositing an electrode layer of palladium on the exposed surface of the contact layer. Preferably, the p-contact is annealed for a prolonged annealing time after the electrode layer is deposited, and the exposed surface of the contact layer is etched using hydrofluoric acid (HF) before depositing the electrode layer.
摘要翻译： 包括具有暴露表面的p型III族氮化物半导体的接触层和位于接触层的暴露表面上的钯（Pd）的电极层的p型接触。 通过提供具有暴露表面的p型III族氮化物半导体接触层和在接触层的暴露表面上沉积钯的电极层来制备p型接触。 优选地，在沉积电极层之后，将p-接触件退火长时间的退火时间，并且在沉积电极层之前，使用氢氟酸（HF）蚀刻接触层的暴露表面。
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公开(公告)号：US07679673B2
公开(公告)日：2010-03-16
申请号：US11144863
申请日：2005-06-03
申请人： Akira Takekuma , Yoshifumi Yamaoka
发明人： Akira Takekuma , Yoshifumi Yamaoka
IPC分类号： H04N5/225
CPC分类号： H04N5/2256
摘要： A socket in which a light-emitting diode can be attached and detached as needed close to the structure for holding a camera module. Socket comprises a spring contact part for contacting the leads or electrodes of the light-emitting diode, and an anchor for anchoring such that the direction of a dome section has a predetermined relationship with the camera module.
摘要翻译： 其中发光二极管可以根据需要靠近用于保持相机模块的结构被附接和分离的插座。 插座包括用于接触发光二极管的引线或电极的弹簧接触部分和用于锚定的锚固件，使得圆顶部分的方向与相机模块具有预定的关系。
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公开(公告)号：US07569867B2
公开(公告)日：2009-08-04
申请号：US11252917
申请日：2005-10-18
IPC分类号： H01L29/74
CPC分类号： H01L33/54 , G02B3/00 , G02B3/14 , G02B26/004 , H01L33/58
摘要： A light-emitting device which comprises as one unit a semiconductor light-emitting element; a first liquid for condensing the light from the semiconductor light-emitting element; a second liquid that is separate from but contacts the first liquid; an airtight space in which at least first liquid and second liquid are disposed; and first and second electrodes to which voltage is applied so as to change the shape of the interface between first liquid and second liquid and adjust the condensed state of the light from semiconductor light-emitting element.
摘要翻译： 一种发光器件，其包括半导体发光元件作为一个单元; 用于冷凝来自半导体发光元件的光的第一液体; 与第一液体分开但接触的第二液体; 其中设置至少第一液体和第二液体的气密空间; 以及施加电压以便改变第一液体和第二液体之间的界面的形状并调节来自半导体发光元件的光的聚光状态的第一和第二电极。
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5.发明授权
公开(公告)号：US3933668A
公开(公告)日：1976-01-20
申请号：US487306
申请日：1974-07-10
CPC分类号： H01G4/1281 , C04B35/47
摘要： An intergranular insulation type semiconductive ceramic composition comprising a major proportion of strontium titanate (SrTiO.sub.3), a minor amount of niobium oxide (Nb.sub.2 O.sub.5) or tantalum oxide (Ta.sub.2 O.sub.5), a minor amount of either germanium oxide (GeO.sub.2) or zinc oxide (ZnO) and having diffused therein either bismuth oxide (Bi.sub.2 O.sub.3) or a mixture of bismuth oxide, lead oxide (PbO) and boric oxide (B.sub.2 O.sub.3). The material is especially useful as a capacitor.
摘要翻译： 包含主要比例的钛酸锶（SrTiO 3），少量氧化铌（Nb 2 O 5）或氧化钽（Ta 2 O 5），少量的氧化锗（GeO 2）或氧化锌（ZnO））的晶间绝缘型半导体陶瓷组合物， 并且在其中扩散了氧化铋（Bi 2 O 3）或氧化铋，氧化铅（PbO）和氧化硼（B 2 O 3）的混合物。 该材料作为电容器特别有用。
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公开(公告)号：US20060114678A1
公开(公告)日：2006-06-01
申请号：US11252917
申请日：2005-10-18
IPC分类号： F21V5/00
CPC分类号： H01L33/54 , G02B3/00 , G02B3/14 , G02B26/004 , H01L33/58
摘要： A light-emitting device which comprises as one unit a semiconductor light-emitting element; a first liquid for condensing the light from the semiconductor light-emitting element; a second liquid that is separate from but contacts the first liquid; an airtight space in which at least first liquid and second liquid are disposed; and first and second electrodes to which voltage is applied so as to change the shape of the interface between first liquid and second liquid and adjust the condensed state of the light from semiconductor light-emitting element.
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公开(公告)号：US20050275748A1
公开(公告)日：2005-12-15
申请号：US11144863
申请日：2005-06-03
申请人： Akira Takekuma , Yoshifumi Yamaoka
发明人： Akira Takekuma , Yoshifumi Yamaoka
IPC分类号： G03B13/36 , G02B7/28 , G03B17/02 , H01L33/00 , H01R33/05 , H01R33/06 , H04N5/222 , H04N5/225 , H04N5/232
CPC分类号： H04N5/2256
摘要： A socket in which a light-emitting diode can be attached and detached as needed close to the structure for holding a camera module. Socket comprises a spring contact part for contacting the leads or electrodes of the light-emitting diode, and an anchor for anchoring such that the direction of a dome section has a predetermined relationship with the camera module.
摘要翻译： 其中发光二极管可以根据需要靠近用于保持相机模块的结构被附接和分离的插座。 插座包括用于接触发光二极管的引线或电极的弹簧接触部分和用于锚定的锚固件，使得圆顶部分的方向与相机模块具有预定的关系。
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