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1.发明授权Method for fabricating semiconductor laser facets using combined cleave and polish technique 失效使用组合切割和抛光技术制造半导体激光刻面的方法
公开(公告)号：US6077720A
公开(公告)日：2000-06-20
申请号：US213124
申请日：1998-12-15
IPC分类号： H01L21/301 , H01L21/304 , H01L33/02 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/323 , H01L21/00 , H01L21/46
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/028 , H01S5/32341 , Y10S438/959
摘要： A method for fabricating opto-electronic devices having a surface that includes a first mirror facet in a first semiconductor layer deposited on a wafer. The mirror facet is located in a first facet plane. In the method of the present invention, the wafer is divided along a first line to create a segment having the mirror facet located therein. The segment is fixed to a fixture that moves in relation to a dicing disk that has a first planar surface in which polishing grit is embedded. The segment is fixed to a mounting surface such that the first plane is aligned parallel to the first planar surface of the dicing disk. The dicing disk is caused to rotate while the first planar surface is in contact with the segment, but not in contact with the mounting surface, thereby polishing a surface of the segment. For opto-electronic devices that include a second mirror facet in a second facet plane, the second facet plane being parallel to the first facet plane and displaced therefrom, the wafer is also divided along the second line such that the segment also includes the second facet plane. The second mirror surface is polished by causing the dicing disk to rotate while the second planar surface is in contact with the segment along the second line. The present invention can be practiced with a conventional dicing saw.
摘要翻译： 一种用于制造具有在沉积在晶片上的第一半导体层中包括第一镜面的表面的光电器件的方法。 镜面位于第一小平面。 在本发明的方法中，沿着第一条线分割晶片以形成具有位于其中的镜面的部分。 该段被固定到相对于具有嵌入抛光砂粒的第一平坦表面的切割盘移动的夹具。 该段固定到安装表面，使得第一平面平行于切割盘的第一平面表面对准。 当第一平面与片段接触而不与安装表面接触时，切割盘旋转，从而抛光片段的表面。 对于在第二面平面中包括第二镜面的光电子器件，第二刻面平行于第一刻面并从其移位，晶片也沿第二线分割，使得该片段还包括第二刻面 飞机 第二镜面通过使切割盘旋转而第二平面与沿着第二线的片段接触而被抛光。 本发明可以用传统的切割锯来实现。
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2.发明授权P-contact for a Group III-nitride semiconductor device and method of making same 失效III族氮化物半导体器件的P接触及其制造方法公开(公告)号：US06239490B1
公开(公告)日：2001-05-29
申请号：US09021053
申请日：1998-02-09
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/32341 , H01L2924/00
摘要： A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Group III-nitride semiconductor contact layer having an exposed surface, and depositing an electrode layer of palladium on the exposed surface of the contact layer. Preferably, the p-contact is annealed for a prolonged annealing time after the electrode layer is deposited, and the exposed surface of the contact layer is etched using hydrofluoric acid (HF) before depositing the electrode layer.
摘要翻译： 包括具有暴露表面的p型III族氮化物半导体的接触层和位于接触层的暴露表面上的钯（Pd）的电极层的p型接触。 通过提供具有暴露表面的p型III族氮化物半导体接触层和在接触层的暴露表面上沉积钯的电极层来制备p型接触。 优选地，在沉积电极层之后，将p-接触件退火长时间的退火时间，并且在沉积电极层之前，使用氢氟酸（HF）蚀刻接触层的暴露表面。
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公开(公告)号：US06815662B2
公开(公告)日：2004-11-09
申请号：US10144208
申请日：2002-05-10
IPC分类号： G01N2125
CPC分类号： G01J11/00
摘要： A measurement apparatus for an optical signal under test includes a closed-loop optical path, an optical mixer in the closed-loop optical path and a photodetector. The optical signal under test and sampling light having a wavelength different from that of the optical signal under test are circulated in the closed-loop optical path. Sum/difference frequency light is generated every time the sampling light passes through the optical mixer. The sum/difference frequency light is detected by the photodetector, which provides a signal representative of the waveform of the optical signal under test.
摘要翻译： 用于被测光信号的测量装置包括闭环光路，闭环光路中的光混合器和光电检测器。 具有与被测光信号不同的波长的被测光信号和采样光在闭环光路中循环。 每次采样光通过光学混合器时产生和/差频光。 和/差频光由光电检测器检测，其提供表示被测光信号的波形的信号。
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4.发明申请公开(公告)号：US20050179051A1
公开(公告)日：2005-08-18
申请号：US11104310
申请日：2005-04-11
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
摘要翻译： 发光器件包括n型半导体层，用于产生光的有源层，所述有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括一层银。 在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。 在本发明的一个实施方案中，银层足够薄以使其透明。 在其它实施例中，银层足够厚以反射入射到其上的大部分光。 可以提供固定层。 固定层可以是电介质或导体。
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5.发明授权公开(公告)号：US07262436B2
公开(公告)日：2007-08-28
申请号：US11104310
申请日：2005-04-11
IPC分类号： H01L29/22
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
摘要翻译： 发光器件包括n型半导体层，用于产生光的有源层，所述有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括一层银。 在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。 在本发明的一个实施方案中，银层足够薄以使其透明。 在其它实施例中，银层足够厚以反射入射到其上的大部分光。 可以提供固定层。 固定层可以是电介质或导体。
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公开(公告)号：US06900472B2
公开(公告)日：2005-05-31
申请号：US09764024
申请日：2001-01-16
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.
摘要翻译： 在基板上构造发光器件。 该器件包括与衬底接触的n型半导体层，用于产生光的有源层，该有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。 形成覆盖在银层上的接合层，以形成与银层的电连接。 银层可以是薄且透明或更厚（大于20nm）和反射的。
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公开(公告)号：US06486984B1
公开(公告)日：2002-11-26
申请号：US09326338
申请日：1999-06-07
IPC分类号： H04J1402
摘要： A method and a system for monitoring specific channels in a WDM system involve splitting a WDM signal into multiple parallel signals, filtering the parallel signals with corresponding individually tunable filters in order to pass specific channels to each filter, and then detecting the presence of passed channels with dedicated detectors that correspond to the tunable filters. In a preferred embodiment, the initial WDM signal is demultiplexed by wavelength into multiple different transmission groups and each filter can be individually tuned over a channel range that corresponds to the range of channels within the transmission group that is directed to the filter. The preferred individually tunable filters are vertical cavity filters formed utilizing semiconductor wafer processing techniques, and the preferred photodetectors are simple low cost single-cell photodetectors.
摘要翻译： 用于监测WDM系统中的特定信道的方法和系统包括将WDM信号分割为多个并行信号，用相应的单独可调谐滤波器对并行信号进行滤波，以便将特定信道传送到每个滤波器，然后检测通过的信道的存在 具有与可调滤波器对应的专用检测器。 在优选实施例中，初始WDM信号被波长解复用为多个不同的传输组，并且每个滤波器可以在对应于指向滤波器的传输组内的信道范围的信道范围上单独调谐。 优选的单独可调滤波器是利用半导体晶片处理技术形成的垂直腔滤波器，并且优选的光电检测器是简单的低成本单单元光电探测器。
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8.发明授权Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效氮化物半导体层结构和包含其一部分的氮化物半导体激光器公开(公告)号：US06829273B2
公开(公告)日：2004-12-07
申请号：US10040328
申请日：2001-12-19
申请人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
发明人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S2301/173
摘要： The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.
摘要翻译： 氮化物半导体层结构包括缓冲层和缓冲层上的复合层。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 复合层是包含AlN的单晶氮化物半导体材料层。 复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。 复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。 第二AlN摩尔分数大于第一AlN摩尔分数。 氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。
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公开(公告)号：US06194743B1
公开(公告)日：2001-02-27
申请号：US09212150
申请日：1998-12-15
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. In the preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconductor materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer is preferably provided over the silver layer. The fixation layer may be a dielectric or a conductor, the choice depending on whether or not the silver layer is transparent.
摘要翻译： 构造在基板上的发光器件。 该器件包括与衬底接触的n型半导体层，用于产生光的有源层，有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。 在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。 在本发明的一个实施方案中，银层足够薄以使其透明。 在其它实施例中，银层足够厚以反射入射到其上的大部分光。 优选在银层上设置固定层。 固定层可以是电介质或导体，这取决于银层是否透明。
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公开(公告)号：US07151384B2
公开(公告)日：2006-12-19
申请号：US10540646
申请日：2004-01-23
申请人： Toshiaki Ueno , Norihide Yamada
发明人： Toshiaki Ueno , Norihide Yamada
CPC分类号： G09G3/006 , G01R1/07307
摘要： A plasma having a certain density is generated between a test electrode and an electrode on a display substrate comprising a TFT array which is a circuit under test, and a test signal is transmitted between the electrode and the test electrode via the plasma. With this technique, a probe means and a testing apparatus enabling measurement of the electrical characteristics of the TFT array formed on the display substrate in a non-contact manner can be provided.
摘要翻译： 在包括作为被测电路的TFT阵列的显示基板上的测试电极和电极之间产生具有一定密度的等离子体，并且通过等离子体在电极和测试电极之间传输测试信号。 通过这种技术，可以提供能够以非接触方式测量形成在显示基板上的TFT阵列的电特性的探针装置和测试装置。
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