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    Magneto-resistance effect element, and method for manufacturing the same
    1.
    发明授权
    Magneto-resistance effect element, and method for manufacturing the same 有权
    磁阻效应元件及其制造方法

    公开(公告)号：US08379351B2

    公开(公告)日：2013-02-19

    申请号：US12073895

    申请日：2008-03-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

    摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

    摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。

    Magneto-resistance effect element, and method for manufacturing the same
    2.
    发明申请
    Magneto-resistance effect element, and method for manufacturing the same 有权
    磁阻效应元件及其制造方法

    公开(公告)号：US20080239591A1

    公开(公告)日：2008-10-02

    申请号：US12073895

    申请日：2008-03-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

    摘要： A magneto-resistance effect element, including:a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

    摘要翻译： 一种磁电阻效应元件，包括：固定磁化层，其一个方向上的磁化基本固定; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层并位于固定磁化层和自由磁化层之间; 薄膜层，相对于自由磁化层位于与间隔层相反的一侧; 以及功能层，其含有选自由固定磁化层，自由磁化层和薄膜层中的至少一个中形成的Si，Mg，B，Al中的至少一种元素。

    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS
    6.
    发明申请
    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 审中-公开
    制造磁阻效应元件，磁头组件和磁记录和再现装置的方法

    公开(公告)号：US20110205669A1

    公开(公告)日：2011-08-25

    申请号：US12881879

    申请日：2010-09-14

    申请人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    发明人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    IPC分类号： G11B5/48 ,  B05D3/06 ,  B05D1/36

    CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  G11B5/3983 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

    摘要： According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment.

    摘要翻译： 根据一个实施例，公开了一种用于制造磁阻效应元件的方法。 元件具有第一和第二磁性层，以及设置在第一和第二磁性层之间的中间层。 中间层具有绝缘层和穿透绝缘层的导电部分。 该方法可以包括形成具有绝缘层和导电部分的结构体，进行第一处理，包括用包含从氩，氙，氦，氖和氖中选出的至少一种的离子中的至少一种照射结构体的第一处理和 氪气和包括选自该组中的至少一种的等离子体，并且执行包括暴露于含氧或氮气的气体中的至少一种的照射，含有氧或氮的离子束的照射，含有氧或氮的等离子体的照射， 结构体提交第一次治疗。

    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element
    10.
    发明授权
    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element 有权
    磁阻元件，磁头组件，磁记录/再现装置，存储单元阵列和磁阻元件的制造方法

    公开(公告)号：US08213130B1

    公开(公告)日：2012-07-03

    申请号：US13234356

    申请日：2011-09-16

    申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3983 ,  G11B2005/3996 ,  G11C11/161

    摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.

    摘要翻译： 磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。 氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间， 或在第二磁性层内，或在第二磁性层和第二电极之间。 氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。 金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。