公开(公告)号：US4434224A

公开(公告)日：1984-02-28

申请号：US343908

申请日：1982-01-29

申请人： Akira Yoshikawa ,  Akitsu Takeda ,  Osamu Ochi ,  Tomoko Hisaki ,  Yoshihiko Mizushima

发明人： Akira Yoshikawa ,  Akitsu Takeda ,  Osamu Ochi ,  Tomoko Hisaki ,  Yoshihiko Mizushima

IPC分类号： H01L21/306 ,  G03F7/00 ,  H01L21/027 ,  H01L21/266 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/314 ,  G03C5/00

CPC分类号： H01L21/314 ,  G03F7/0035 ,  H01L21/0271 ,  H01L21/266 ,  H01L21/302

摘要： In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.

摘要翻译： 在根据本发明的图案形成方法中，有机聚合物抗蚀剂材料与无机抗蚀剂材料同时使用，即，由有机聚合物抗蚀剂材料层组成的第一所需图案形成在基底材料上，然后整个表面 用无机抗蚀剂材料层覆盖，然后用无机抗蚀剂材料层形成第二所需图案，然后将得到的第二所需图案转印到有机聚合物抗蚀剂材料上。 根据本发明，通过检测来自基板上的对准标记的反射光可以自动实现掩模对准，也容易进行包括大小图案的浮雕的形成，也可以提高生产量。 本发明的方法可以与各种工艺步骤组合，使得这种组合方法适用于深浅蚀刻，层间绝缘膜的形成和剥离方法。

公开(公告)号：US4350541A

公开(公告)日：1982-09-21

申请号：US174275

申请日：1980-07-31

申请人： Yoshihiko Mizushima ,  Akitsu Takeda ,  Akira Yoshikawa ,  Osamu Ochi ,  Tomoko Hisaki

发明人： Yoshihiko Mizushima ,  Akitsu Takeda ,  Akira Yoshikawa ,  Osamu Ochi ,  Tomoko Hisaki

IPC分类号： G03F7/004 ,  H01L21/314 ,  H01L21/225

CPC分类号： H01L21/314 ,  G03F7/0044 ,  Y10S438/93

摘要： A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure pattern for the inorganic photoresist layer. The diffusion of the impurity from the impurity source layer into the substrate is accurately controlled so as to provide the doped region with a desired impurity concentration. Moreover, the evaporation of the impurity into the atmosphere during processing is minimized.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底的主表面上形成具有第一非晶层的无机光致抗蚀剂层，所述第一非晶层包含Se作为基质成分并且包括用于提供一种导电类型的杂质和第二银 或含银层，形成在第一层上; 以曝光图案曝光无机光致抗蚀剂层; 显影曝光的无机光致抗蚀剂层以形成含有无机光致抗蚀剂层作为杂质源层的图案化杂质; 在半导体衬底的主表面上形成耐热性外涂层，同时覆盖杂质源层; 以及通过将杂质从杂质源层扩散到位于杂质源层下面的衬底的区域中而形成掺杂区域。 耐热外涂层可以是具有窗口的绝缘层，导电层通过该窗口连接到掺杂区域并且在外涂层上延伸。 通过相对较少的工艺步骤并且具有对应于无机光致抗蚀剂层的曝光图案的图案容易且准确地形成掺杂区域。 将杂质从杂质源层扩散到衬底中被精确地控制，以便为掺杂区域提供所需的杂质浓度。 此外，在处理期间将杂质蒸发到大气中被最小化。

公开(公告)号：US4320191A

公开(公告)日：1982-03-16

申请号：US201663

申请日：1980-07-07

申请人： Akira Yoshikawa ,  Osamu Ochi ,  Tomoko Hisaki ,  Yoshihiko Mizushima

发明人： Akira Yoshikawa ,  Osamu Ochi ,  Tomoko Hisaki ,  Yoshihiko Mizushima

IPC分类号： G03C5/56 ,  C23F4/00 ,  G03C1/705 ,  G03F1/00 ,  G03F1/54 ,  G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314

CPC分类号： G03C1/705 ,  G03C5/56 ,  G03F1/00 ,  G03F7/0044 ,  H01L21/31116 ,  H01L21/314

摘要： This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.

摘要翻译： 本发明涉及一种使用由非晶硫族化物层（2）和薄银层（3）层压制成的辐射敏感硫族化物层的图案形成方法，并且公开了一种图案形成工艺，其特征在于蚀刻出非晶硫族化物层（ 22）通过用氟系气体的等离子体蚀刻在光（6）或加速粒子束的照射下在未曝光区域未掺杂银，以及其中银掺杂的非晶态硫族化物层（21）的图案形成工艺 ）用作蚀刻掩模，然后通过等离子体蚀刻蚀刻出衬底层（1c），以在衬底上形成给定的图案。