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公开(公告)号：US4320191A
公开(公告)日：1982-03-16
申请号：US201663
申请日：1980-07-07
IPC分类号： G03C5/56 , C23F4/00 , G03C1/705 , G03F1/00 , G03F1/54 , G03F7/004 , H01L21/027 , H01L21/311 , H01L21/314
CPC分类号： G03C1/705 , G03C5/56 , G03F1/00 , G03F7/0044 , H01L21/31116 , H01L21/314
摘要： This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.
摘要翻译： 本发明涉及一种使用由非晶硫族化物层（2）和薄银层（3）层压制成的辐射敏感硫族化物层的图案形成方法，并且公开了一种图案形成工艺，其特征在于蚀刻出非晶硫族化物层（ 22）通过用氟系气体的等离子体蚀刻在光（6）或加速粒子束的照射下在未曝光区域未掺杂银，以及其中银掺杂的非晶态硫族化物层（21）的图案形成工艺 ）用作蚀刻掩模，然后通过等离子体蚀刻蚀刻出衬底层（1c），以在衬底上形成给定的图案。
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公开(公告)号：US4434224A
公开(公告)日：1984-02-28
申请号：US343908
申请日：1982-01-29
IPC分类号： H01L21/306 , G03F7/00 , H01L21/027 , H01L21/266 , H01L21/302 , H01L21/3065 , H01L21/314 , G03C5/00
CPC分类号： H01L21/314 , G03F7/0035 , H01L21/0271 , H01L21/266 , H01L21/302
摘要： In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.
摘要翻译： 在根据本发明的图案形成方法中，有机聚合物抗蚀剂材料与无机抗蚀剂材料同时使用，即，由有机聚合物抗蚀剂材料层组成的第一所需图案形成在基底材料上，然后整个表面 用无机抗蚀剂材料层覆盖，然后用无机抗蚀剂材料层形成第二所需图案，然后将得到的第二所需图案转印到有机聚合物抗蚀剂材料上。 根据本发明，通过检测来自基板上的对准标记的反射光可以自动实现掩模对准，也容易进行包括大小图案的浮雕的形成，也可以提高生产量。 本发明的方法可以与各种工艺步骤组合，使得这种组合方法适用于深浅蚀刻，层间绝缘膜的形成和剥离方法。
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公开(公告)号：US4350541A
公开(公告)日：1982-09-21
申请号：US174275
申请日：1980-07-31
IPC分类号： G03F7/004 , H01L21/314 , H01L21/225
CPC分类号： H01L21/314 , G03F7/0044 , Y10S438/93
摘要： A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure pattern for the inorganic photoresist layer. The diffusion of the impurity from the impurity source layer into the substrate is accurately controlled so as to provide the doped region with a desired impurity concentration. Moreover, the evaporation of the impurity into the atmosphere during processing is minimized.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底的主表面上形成具有第一非晶层的无机光致抗蚀剂层，所述第一非晶层包含Se作为基质成分并且包括用于提供一种导电类型的杂质和第二银 或含银层，形成在第一层上; 以曝光图案曝光无机光致抗蚀剂层; 显影曝光的无机光致抗蚀剂层以形成含有无机光致抗蚀剂层作为杂质源层的图案化杂质; 在半导体衬底的主表面上形成耐热性外涂层，同时覆盖杂质源层; 以及通过将杂质从杂质源层扩散到位于杂质源层下面的衬底的区域中而形成掺杂区域。 耐热外涂层可以是具有窗口的绝缘层，导电层通过该窗口连接到掺杂区域并且在外涂层上延伸。 通过相对较少的工艺步骤并且具有对应于无机光致抗蚀剂层的曝光图案的图案容易且准确地形成掺杂区域。 将杂质从杂质源层扩散到衬底中被精确地控制，以便为掺杂区域提供所需的杂质浓度。 此外，在处理期间将杂质蒸发到大气中被最小化。
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4.发明授权Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials 失效具有辐射敏感硫族化物层的图案形成材料和用这种材料形成图案的方法
公开(公告)号：US4127414A
公开(公告)日：1978-11-28
申请号：US804659
申请日：1977-06-08
申请人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
CPC分类号： G03F1/54 , G03F7/0044
摘要： A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
摘要翻译： 图案形成材料包括基底和设置在其上的辐射敏感硫族化物层。 辐射敏感性硫族化物层由化学组成为75〜95摩尔％硒和5〜25摩尔％的锗和叠加在其上的银层构成。 具有本发明的辐射敏感硫族化物层的图案形成材料在光刻应用中特别有用。
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公开(公告)号：US5109358A
公开(公告)日：1992-04-28
申请号：US423203
申请日：1989-10-17
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
CPC分类号： G11C11/42
摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.
摘要翻译： 一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射 响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件 光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括 通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号 环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。
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公开(公告)号：US4827317A
公开(公告)日：1989-05-02
申请号：US66493
申请日：1987-06-26
CPC分类号： G01S7/4865
摘要： In a device for measuring the time interval between first and second optical pulses, the time interval between the first optical pulse and a first one of the train of reference optical clock pulses which is closest to the first optical pulse, and the time interval between the second optical pulse and a second one of the train of reference optical clock pulses which is closest to the second optical pulse are measured, and the time interval between the first and second optical pulses is calculated according to the time intervals thus measured and the time interval between the first and second reference optical clock pulses.
摘要翻译： 在用于测量第一和第二光脉冲之间的时间间隔的装置中，第一光脉冲与最接近第一光脉冲的参考光时钟脉冲序列中的第一个之间的时间间隔和 测量最靠近第二光脉冲的第二光脉冲和第二参考光时钟脉冲序列，并且根据如此测量的时间间隔和时间间隔计算第一和第二光脉冲之间的时间间隔 在第一和第二参考光时钟脉冲之间。
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7.发明授权Method of manufacturing insulating film and electric device utilizing the same 失效制造绝缘膜的方法和利用该方法的电子装置
公开(公告)号：US4460417A
公开(公告)日：1984-07-17
申请号：US436035
申请日：1982-10-22
IPC分类号： H01L29/73 , H01L21/321 , H01L21/331 , H01L29/72 , H01L21/225 , H01L21/265
CPC分类号： H01L29/66272 , H01L21/32105 , H01L29/72
摘要： An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.
摘要翻译： 通过氧化含有硼或硼和锗的非晶硅层来制备绝缘膜。 非晶硅层从非晶硅层的表面向内部分地被氧化，形成绝缘膜，而将非晶硅层的未氧化部分用作导电层。 非晶硅层可以含有硼或硼以及第IV族的元素，例如锗。 绝缘膜用于制造双极晶体管。
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公开(公告)号：US06643020B2
公开(公告)日：2003-11-04
申请号：US09982022
申请日：2001-10-19
IPC分类号： G01N2100
摘要： Light is made incident into an inhomogeneous medium, and transmitted light or reflected light is detected. The intensity of the detected light is represented by the linear sum of exponential functions of penetration depth using e as a base, or a function formed from the exponents and a function derived from the function. This function includes the physical quantity of the inhomogeneous medium as a coefficient. When light amount measurement data are acquired at a plurality of wavelengths or thicknesses, and the light intensity or other known information is substituted into the function and an expression derived from the function, the physical quantity of the inhomogeneous medium can be determined. Thus, an optical analysis method for an inhomogeneous medium, which is capable of accurate analysis, can be provided.
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公开(公告)号：US5534992A
公开(公告)日：1996-07-09
申请号：US298554
申请日：1994-08-30
CPC分类号： G01S7/4818 , G01S17/36 , G01S17/88 , G01S7/4915 , G01S7/4918
摘要： Laser light from LD (laser diode) is guided through a fiber to be projected onto a reflector. A receiver detects a return beam of modulated light reflected by the object and outputs a signal reflecting a phase difference between the laser light and the modulation signal. The frequency of the modulation signal is changed based on the signal value so as to finally achieve phase lock. When the phase lock fixes the frequency of the modulation signal, the frequency always corresponds to a distance from LD to the reflector or a group index of a substance filling the optical path. Thus, the distance to the object or the group index of the substance filling the optical path at the time of phase lock can be determined in a simple manner and with a high accuracy, based on the output frequency at the time of phase lock.
摘要翻译： 来自LD（激光二极管）的激光通过光纤被引导到反射器上。 接收器检测由物体反射的调制光的返回光束，并输出反映激光与调制信号之间的相位差的信号。 基于信号值改变调制信号的频率，以最终实现锁相。 当相位锁定固定调制信号的频率时，频率总是对应于从LD到反射器的距离或填充光路的物质的组索引。 因此，可以基于锁相时的输出频率，以简单的方式和高精度来确定在相位锁定时填充光路的物质到物体的距离或群体索引的距离。
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公开(公告)号：US5227638A
公开(公告)日：1993-07-13
申请号：US737795
申请日：1991-07-24
申请人： Yoshihiko Mizushima , Takashi Iida , Eiji Inuzuka
发明人： Yoshihiko Mizushima , Takashi Iida , Eiji Inuzuka
IPC分类号： G01N21/64
CPC分类号： G01N21/66 , G01N21/6489
摘要： Photoluminescence or electroluminescence from a material substrate is measured in a photon-counting range. Luminous efficiency of the substrate in its normal operation range is evaluated on the basis of the measured data. The luminescence is measured in an excitation range of the material including a transition excitation level corresponding to a transition luminous level from a low luminous range to a regular, intense luminous range. Two-dimensional distribution of the luminous efficiencies can be obtained by measuring the luminescence from small divided areas of the substrate.
摘要翻译： 在光子计数范围内测量材料衬底的光致发光或电致发光。 基于测量数据评估基板在其正常工作范围内的发光效率。 在材料的激发范围内测量发光，其包括对应于从低发光范围到规则的强烈发光范围的过渡发光水平的跃迁激发水平。 可以通过从基板的小分割区域测量发光来获得发光效率的二维分布。
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