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    SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE
    2.
    发明申请
    SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE 失效
    具有CPP结构的旋转阀磁传感器

    公开(公告)号：US20060119989A1

    公开(公告)日：2006-06-08

    申请号：US11327676

    申请日：2006-01-06

    申请人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Shin Eguchi ,  Hitoshi Kanai ,  Reiko Kondo ,  Hitoshi Kishi ,  Junya Ikeda

    发明人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Shin Eguchi ,  Hitoshi Kanai ,  Reiko Kondo ,  Hitoshi Kishi ,  Junya Ikeda

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3295

    摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

    摘要翻译： 本文公开了一种自旋阀磁阻传感器，其包括第一导体层，设置在第一导体层上的自由铁磁层，设置在自由铁磁层上的非磁性中间层，设置在非磁性中间层上的钉扎铁磁层，反铁磁层 设置在被钉扎的铁磁层上，以及设置在反铁磁层上的第二导体层。 自由铁磁层和被钉扎的铁磁层中的至少一个具有大于在通过至少一个层的面内方向的电流的情况下提供最大电阻变化率或电阻变化量的厚度的厚度。 也就是说，自由铁磁层和被钉扎铁磁层中的至少一个的厚度落在3nm至12nm的范围内。

    Magnetoresistive element
    5.
    发明授权
    Magnetoresistive element 失效
    磁阻元件

    公开(公告)号：US07180713B2

    公开(公告)日：2007-02-20

    申请号：US10271428

    申请日：2002-10-16

    申请人： Keiichi Nagasaka ,  Yoshihiko Seyama ,  Takahiko Sugawara ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Keiichi Nagasaka ,  Yoshihiko Seyama ,  Takahiko Sugawara ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268

    摘要： A magnetoresistive element that detects a change of magnetoresistance by giving a sense current in the thickness direction of a magnetoresistive effect film including at least a base layer, a free layer, a non-magnetic layer, a pinned layer, a pinning layer, and a protection layer, includes a granular structure layer that includes conductive particles and an insulating matrix material in the form of a thin film containing the conductive particles in a dispersed state and having a smaller thickness than the particle diameter of the conductive particles, the granular structure layer being interposed between at least two adjacent layers among the base layer, the free layer, the non-magnetic layer, the pinned layer, the pinning layer, and the protection layer.

    摘要翻译： 一种磁阻元件，其通过在至少包括基底层，自由层，非磁性层，被钉扎层，钉扎层和至少一层的磁阻效应膜的厚度方向上提供感测电流来检测磁阻的变化。 保护层包括粒状结构层，其包含导电粒子和绝缘基质材料，其为含有分散状态的导电性粒子且厚度小于导电性粒子粒径的薄膜，粒状结构层 介于基层，自由层，非磁性层，钉扎层，钉扎层和保护层中的至少两个相邻层之间。

    Magnetic sensor, magnetic head and magnetic recording apparatus
    6.
    发明授权
    Magnetic sensor, magnetic head and magnetic recording apparatus 失效
    磁传感器，磁头和磁记录装置

    公开(公告)号：US06801413B2

    公开(公告)日：2004-10-05

    申请号：US10106412

    申请日：2002-03-26

    申请人： Yoshihiko Seyama ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Yoshihiko Seyama ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magnetic sensor having such a structure that a hard layer for controlling the magnetic domain formed of a conductive hard magnetic material, and a magnetic sensor layer, are at least partially in direct contact with each other, and current flows in the direction wherein at least a main component of current is perpendicular to the surface of the magnetic sensor layer. The current flowing in the magnetic sensor layer and the hard layer is controlled by changing the resistivity of the hard layer. The magnetic sensor is used as a magnetic read head in a magnetic recording apparatus such as magnetic disk apparatus.

    摘要翻译： 具有这样一种结构的磁传感器，其特征在于，用于控制由导电硬磁材料形成的磁畴的硬层和磁传感器层至少部分地彼此直接接触，并且电流至少在至少 电流的主要成分垂直于磁性传感器层的表面。 通过改变硬质层的电阻率来控制流过磁传感器层和硬层的电流。 磁传感器用作诸如磁盘装置的磁记录装置中的磁读头。

    Current perpendicular-to-the-plane structure spin valve magnetoresistive head
    9.
    发明授权
    Current perpendicular-to-the-plane structure spin valve magnetoresistive head 失效
    当前垂直于平面结构的自旋阀磁阻头

    公开(公告)号：US06781799B2

    公开(公告)日：2004-08-24

    申请号：US09821185

    申请日：2001-03-29

    申请人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu

    发明人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3254

    摘要： A current perpendicular-to-the-plane (CPP) structure spin valve magnetoresistive (MR) transducer includes an insulating layer. A pinned or free ferromagnetic layer serves to space or isolate the insulating layer from a non-magnetic spacer layer interposed between the pinned and free ferromagnetic layers. The sensing current is allowed to penetrate through the insulating layer. Fine pin-holes generally formed in the insulating layer are supposed to enable migration of electrons through the insulating layer. Similar to the situation in which the sensing current is allowed to flow through a reduced sectional area, a larger variation can be obtained in response to the inversion of the magnetization in the free ferromagnetic layer. The spin valve MR transducer is expected to greatly contribute to realization of a still higher recording density. Moreover, the spin valve MR transducer is also expected to exhibit an electric resistance approximately equal to a tenth part of that of a well-known tunnel junction magnetoresistive (TMR) element. Accordingly, a thermal noise can significantly be suppressed in the spin valve MR transducer as compared with the TMR element.

    摘要翻译： 电流垂直于平面（CPP）结构的自旋阀磁阻（MR）传感器包括绝缘层。 被钉扎或自由的铁磁层用于将绝缘层与置于固定和自由铁磁层之间的非磁性间隔层隔离或隔离。 允许感测电流穿过绝缘层。 通常在绝缘层中形成的细针孔假设能使电子迁移通过绝缘层。 类似于允许感测电流流过减小的截面面积的情况，响应于自由铁磁层中的磁化的反转，可以获得更大的变化。 自旋阀MR换能器有望大大有助于实现更高的记录密度。 此外，自旋阀MR换能器也预期会呈现大约等于公知的隧道结磁阻（TMR）元件的电阻的十分之一的电阻。 因此，与TMR元件相比，自旋阀MR换能器可以显着地抑制热噪声。