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    SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE
    3.
    发明申请
    SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE 失效
    具有CPP结构的旋转阀磁传感器

    公开(公告)号：US20060119989A1

    公开(公告)日：2006-06-08

    申请号：US11327676

    申请日：2006-01-06

    申请人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Shin Eguchi ,  Hitoshi Kanai ,  Reiko Kondo ,  Hitoshi Kishi ,  Junya Ikeda

    发明人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Shin Eguchi ,  Hitoshi Kanai ,  Reiko Kondo ,  Hitoshi Kishi ,  Junya Ikeda

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3295

    摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

    摘要翻译： 本文公开了一种自旋阀磁阻传感器，其包括第一导体层，设置在第一导体层上的自由铁磁层，设置在自由铁磁层上的非磁性中间层，设置在非磁性中间层上的钉扎铁磁层，反铁磁层 设置在被钉扎的铁磁层上，以及设置在反铁磁层上的第二导体层。 自由铁磁层和被钉扎的铁磁层中的至少一个具有大于在通过至少一个层的面内方向的电流的情况下提供最大电阻变化率或电阻变化量的厚度的厚度。 也就是说，自由铁磁层和被钉扎铁磁层中的至少一个的厚度落在3nm至12nm的范围内。

    Magnetoresistive head and manufacturing method therefor
    4.
    发明授权
    Magnetoresistive head and manufacturing method therefor 失效
    磁阻头及其制造方法

    公开(公告)号：US06754052B2

    公开(公告)日：2004-06-22

    申请号：US10107084

    申请日：2002-03-27

    申请人： Hiroshi Asida ,  Shin Eguchi ,  Atsushi Tanaka ,  Reiko Kondo ,  Yutaka Shimizu

    发明人： Hiroshi Asida ,  Shin Eguchi ,  Atsushi Tanaka ,  Reiko Kondo ,  Yutaka Shimizu

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49046

    摘要： A magnetoresistive head including a first magnetic shield, a first electrode terminal provided on the first magnetic shield and having a first width, and a magnetoresistive film provided on the first electrode terminal and having a second width less than or equal to the first width. The magnetoresistive head further includes a second electrode terminal provided on the magnetoresistive film and having a third width less than or equal to the second width, and a second magnetic shield provided on the second electrode terminal. Preferably, the magnetoresistive head further includes a plug electrode for connecting the second electrode terminal to the second magnetic shield, and a plug side wall protective insulating film for covering a side wall of the plug electrode.

    摘要翻译： 一种磁阻头，包括第一磁屏蔽，设置在第一磁屏蔽上并具有第一宽度的第一电极端子和设置在第一电极端子上并具有小于或等于第一宽度的第二宽度的磁阻膜。 磁阻头还包括设置在磁阻膜上并具有小于或等于第二宽度的第三宽度的第二电极端子和设置在第二电极端子上的第二磁屏蔽。 优选地，磁阻头还包括用于将第二电极端子连接到第二磁屏蔽的插头电极和用于覆盖插头电极的侧壁的插头侧壁保护绝缘膜。

    Magnetoresistive head
    5.
    发明申请
    Magnetoresistive head 审中-公开
    磁阻头

    公开(公告)号：US20050168877A1

    公开(公告)日：2005-08-04

    申请号：US11093514

    申请日：2005-03-30

    申请人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

    CPC分类号： G11B5/39 ,  G11B5/127

    摘要： A magnetoresistive head for detecting a magnetic signal on a recording medium as a reproduction signal includes a first magnetic shield, a first electrode terminal disposed on the first magnetic shield, a magnetoresistive film disposed on the first electrode terminal, magnetic domain control films disposed on both sides of the magnetoresistive film for controlling magnetic domains in the magnetoresistive film by applying a bias magnetic field in a first direction to the magnetoresistive film. The magnetoresistive head further includes a second electrode terminal disposed on the magnetoresistive film, and a second magnetic shield disposed on the second electrode terminal. At the time of reproduction of the magnetic signal, a sense current is passed across the first and second electrode terminals in the direction perpendicular to the film plane of the magnetoresistive film so that the direction of a current magnetic field in a medium-opposed end portion of the magnetoresistive film is in the first direction.

    摘要翻译： 用于检测作为再现信号的记录介质上的磁信号的磁阻头包括第一磁屏蔽，设置在第一磁屏蔽上的第一电极端子，设置在第一电极端子上的磁阻膜，设置在两者上的磁畴控制膜 用于通过向磁阻膜施加第一方向的偏置磁场来控制磁阻膜中的磁畴的磁阻膜的侧面。 磁阻头还包括设置在磁阻膜上的第二电极端子和设置在第二电极端子上的第二磁屏蔽。 在再现磁信号时，感测电流在与磁阻膜的膜平面垂直的方向上穿过第一和第二电极端子，使得中间相对端部中的电流磁场的方向 磁阻膜位于第一方向。

    Magneto-resistive element, magnetic head and megnetic storage apparatus
    6.
    发明申请
    Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
    磁阻元件，磁头和储能装置

    公开(公告)号：US20050264953A1

    公开(公告)日：2005-12-01

    申请号：US11137008

    申请日：2005-05-25

    申请人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/14 ,  H01F10/20 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/20 ,  H01F10/3272 ,  H01F10/3295

    摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

    摘要翻译： 磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。 钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。 第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻 控制层由导电铁磁氧化物制成。

    Magnetoresistive head
    8.
    发明申请
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号：US20050280952A1

    公开(公告)日：2005-12-22

    申请号：US10974640

    申请日：2004-10-27

    申请人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

    CPC分类号： G11B5/3903 ,  G11B5/3912

    摘要： A magnetoresistive head includes a first magnetic shield, a first electrode terminal arranged on the first magnetic shield at an entry side of a magnetic field from a carrier, a third electrode terminal that is spaced from the first electrode terminal, and arranged on the first magnetic shield at a side opposite to the entry side of the magnetic field from the carrier, a magnetoresistive coating arranged on the first and third electrode terminals, a second electrode terminal that is arranged on the magnetoresistive coating, and opposed to the first electrode terminal, a second magnetic shield arranged on the second electrode terminal, and a sense current source connected to the first and second electrode terminals, which applies sense current in a direction perpendicular to a coating surface of the magnetoresistive coating.

    摘要翻译： 磁阻头包括第一磁屏蔽，在离开载体的磁场入口侧设置在第一磁屏蔽上的第一电极端子，与第一电极端子间隔开的第三电极端子，并且布置在第一磁屏蔽上 屏蔽在与载体的磁场入口侧相对的一侧，布置在第一和第三电极端子上的磁阻涂层，布置在磁阻涂层上并与第一电极端子相对的第二电极端子， 布置在第二电极端子上的第二磁屏蔽和连接到第一和第二电极端子的感测电流源，其在垂直于磁阻涂层的涂层表面的方向上施加感测电流。

    Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same
    9.
    发明申请
    Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same 审中-公开
    电流垂直于平面的结构磁阻元件和包括其的磁头滑块

    公开(公告)号：US20050099737A1

    公开(公告)日：2005-05-12

    申请号：US11022733

    申请日：2004-12-27

    申请人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Reiko Kondo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/39 ,  H01F10/32 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  G11B5/3912 ,  H01F10/3268

    摘要： A magnetoresistive film extends along a datum plane intersecting with a medium-opposed surface. A non-magnetic body extends along the datum plane at a location adjacent the magneto resistive film. A so-called magnetic domain controlling films are omitted. The inventors have found that a sufficient magnetization can be established in a predetermined direction along the medium-opposed surface in the CPP structure magnetoresistive element based on the current magnetic field. As long as the quantity of the heat generated, namely of the electric power is maintained constant, the magnetic field of a sufficient intensity can be established in the free magnetic layer. The direction of the magnetization can easily be controlled in a facilitated manner.

    摘要翻译： 磁阻膜沿着与介质相对表面相交的基准平面延伸。 非磁性体在与磁阻薄膜相邻的位置沿基准平面延伸。 省略了所谓的磁畴控制膜。 本发明人已经发现，基于电流磁场，可以沿着CPP结构磁阻元件中的中间相对表面沿预定方向建立足够的磁化强度。 只要产生的热量，即电力的量保持恒定，则可以在自由磁层中建立足够强度的磁场。 容易地控制磁化方向。

    Magneto-resistive element, magnetic head and magnetic storage apparatus
    10.
    发明授权
    Magneto-resistive element, magnetic head and magnetic storage apparatus 失效
    磁阻元件，磁头和磁存储装置

    公开(公告)号：US07486487B2

    公开(公告)日：2009-02-03

    申请号：US11137008

    申请日：2005-05-25

    申请人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/20 ,  H01F10/3272 ,  H01F10/3295

    摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

    摘要翻译： 磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。 钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。 第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻 控制层由导电铁磁氧化物制成。