Sensor for a magnetic memory device and method of manufacturing the same
    3.
    发明申请
    Sensor for a magnetic memory device and method of manufacturing the same 审中-公开
    用于磁存储器件的传感器及其制造方法

    公开(公告)号:US20090137066A1

    公开(公告)日:2009-05-28

    申请号:US12289952

    申请日:2008-11-07

    IPC分类号: H01L21/00

    CPC分类号: H01L43/14 H01L27/222

    摘要: The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous III-V material layer on the silicon substrate, heating the amorphous III-V material layer, and epitaxially growing III-V material on the amorphous III-V material layer.

    摘要翻译: 本发明包括制造方法,其包括以下步骤:制备硅衬底,在硅衬底上形成非晶III-V材料层,加热无定形III-V材料层,以及在非晶III-V材料上外延生长III-V材料 层。

    METHOD, APPARATUS AND SYSTEM FOR A TRANSFERABLE MICROMACHINED PIEZOELECTRIC TRANSDUCER ARRAY
    5.
    发明申请
    METHOD, APPARATUS AND SYSTEM FOR A TRANSFERABLE MICROMACHINED PIEZOELECTRIC TRANSDUCER ARRAY 有权
    可转移微电子压电传感器阵列的方法,装置和系统

    公开(公告)号:US20150200350A1

    公开(公告)日:2015-07-16

    申请号:US14152899

    申请日:2014-01-10

    摘要: Techniques and mechanisms to provide mechanical support for a micromachined piezoelectric transducer array. In an embodiment, a transducer array includes transducer elements each comprising a respective membrane portion and a respective supporting structure disposed on or around a periphery of that membrane portion. The transducer elements are initially formed on a sacrificial wafer, wherein supporting structures of the transducer elements facilitate subsequent removal of the sacrificial wafer and/or subsequent handling of the transducer elements. In another embodiment, a polymer layer is disposed on the transducer elements to provide for flexible support during such subsequent handling.

    摘要翻译: 为微加工压电换能器阵列提供机械支撑的技术和机制。 在一个实施例中,换能器阵列包括换能器元件,每个换能器元件包括设置在该膜部分的周边上或周围的相应的膜部分和相应的支撑结构。 换能器元件最初形成在牺牲晶片上,其中换能器元件的支撑结构有助于随后去除牺牲晶片和/或随后处理换能器元件。 在另一个实施方案中,聚合物层设置在换能器元件上以在随后的处理期间提供柔性支撑。

    Magnetic memory device having a C-shaped structure and method of manufacturing the same
    6.
    发明申请
    Magnetic memory device having a C-shaped structure and method of manufacturing the same 审中-公开
    具有C形结构的磁存储器件及其制造方法

    公开(公告)号:US20090146231A1

    公开(公告)日:2009-06-11

    申请号:US12289951

    申请日:2008-11-07

    IPC分类号: H01L29/82 H01L21/00

    CPC分类号: G11C11/18 G01R33/07

    摘要: A non-volatile magnetic memory device having one or more memory cells, each of the memory cells includes a magnetic switch including a C-shaped magnetic component and a write coil located proximate the magnetic component, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.

    摘要翻译: 一种具有一个或多个存储单元的非易失性磁存储器件,每个存储器单元包括一个包括C形磁性元件和位于磁性元件附近的写入线圈的磁性开关,该写入线圈被耦合以接收足够的电流 在磁性部件中产生残留的磁极性,并且靠近磁性部件定位霍尔传感器,以检测指示存储的数据位的剩余磁极性。