公开(公告)号：US08603625B2

公开(公告)日：2013-12-10

申请号：US12913107

申请日：2010-10-27

申请人： Yunie Izumi ,  Yoshimasa Kobayashi ,  Yuji Katsuda

发明人： Yunie Izumi ,  Yoshimasa Kobayashi ,  Yuji Katsuda

IPC分类号： B32B5/16 ,  C04B35/64

CPC分类号： C04B35/18 ,  C04B35/16 ,  C04B35/195 ,  Y10T428/12597 ,  Y10T428/257

摘要： A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m2/g to 20 m2/g. The aluminum oxide has an average particle diameter in a range of 0.4 μm to 10 μm, a specific surface area in a range of 0.8 m2/g to 8 m2/g. A volume ratio of the aluminum oxide to the barium silicate is in a range of 10% by volume to 25% by volume.

摘要翻译： 烧结陶瓷体的制造方法将硅酸钡与氧化铝，玻璃材料和添加剂氧化物混合以制备材料混合物，模塑材料混合物并使其成型。 硅酸钡为单斜晶系，平均粒径为0.3μm〜1μm，比表面积为5m 2 / g〜20m 2 / g。 氧化铝的平均粒径为0.4μm〜10μm，比表面积为0.8m 2 / g〜8m 2 / g。 氧化铝与硅酸钡的体积比在10体积％〜25体积％的范围内。

公开(公告)号：US08226865B2

公开(公告)日：2012-07-24

申请号：US12581307

申请日：2009-10-19

申请人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

发明人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

IPC分类号： B29C67/00

CPC分类号： C04B35/581 ,  C04B35/62815 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/366 ,  H01L21/316 ,  H01L21/318

摘要： The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.

公开(公告)号：US20100104892A1

公开(公告)日：2010-04-29

申请号：US12581307

申请日：2009-10-19

申请人： Yoshimasa KOBAYASHI ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

发明人： Yoshimasa KOBAYASHI ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

IPC分类号： B32B18/00 ,  C04B35/582 ,  C04B35/04

CPC分类号： C04B35/581 ,  C04B35/62815 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/366 ,  H01L21/316 ,  H01L21/318

摘要： The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.

摘要翻译： 根据本发明的氮化铝基复合材料是高纯度的氮化铝基复合材料，其过渡金属，碱金属和硼的含量比分别低至1000ppm或更低，具有 AlN和MgO构成相，并且还含有选自稀土金属氧化物，稀土金属 - 铝复合氧化物，碱土金属 - 铝复合氧化物，稀土金属氟氧化物，氧化钙 和氟化钙，其中导热率在40〜150W / mK的范围内，热膨胀系数在7.3〜8.4ppm /℃的范围内，体积电阻率为1×10 14＆OHgr· 厘米或更高。

公开(公告)号：US20090233087A1

公开(公告)日：2009-09-17

申请号：US12400194

申请日：2009-03-09

申请人： Yoshimasa KOBAYASHI ,  Yuji Katsuda

发明人： Yoshimasa KOBAYASHI ,  Yuji Katsuda

IPC分类号： B32B5/16 ,  C09K3/00

CPC分类号： C04B35/505 ,  C04B35/62685 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3246 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/662 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/85 ,  C04B2235/96 ,  Y10T428/256

摘要： An electrostatic chuck that is a member for a semiconductor-manufacturing apparatus contains an yttrium oxide material containing first inorganic particles and second inorganic particles. The first inorganic particles form solid solutions in yttrium oxide, can be precipitated from yttrium oxide, and are present in grains of yttrium oxide. The second inorganic particles can form solid solutions in the first inorganic particles, are unlikely to form any solid solution in yttrium oxide, and are present at boundaries between the yttrium oxide grains. The first inorganic particles contain at least one of ZrO2 and HfO2. The second inorganic particles contain at least one selected from the group consisting of MgO, CaO, SrO, and BaO. The yttrium oxide material is produced in such a manner that solid solution particles are prepared by mixing and firing the first and second inorganic particles and are mixed with yttrium oxide and the mixture is fired.

摘要翻译： 作为半导体制造装置的构件的静电卡盘包含含有第一无机颗粒和第二无机颗粒的氧化钇材料。 第一种无机颗粒在氧化钇中形成固溶体，可以从氧化钇中沉淀出来，并存在于氧化钇颗粒中。 第二无机颗粒可以在第一无机颗粒中形成固溶体，不可能在氧化钇中形成任何固溶体，并且存在于氧化钇颗粒之间的边界处。 第一无机颗粒含有ZrO 2和HfO 2中的至少一种。 第二无机颗粒含有选自MgO，CaO，SrO和BaO中的至少一种。 以这样的方式制造氧化钇材料，即通过混合和烧制第一和第二无机颗粒并与氧化钇混合制备固溶体颗粒，并将混合物烧制。

公开(公告)号：US20090200523A1

公开(公告)日：2009-08-13

申请号：US12369106

申请日：2009-02-11

申请人： Yoshimasa KOBAYASHI ,  Yuji Katsuda

发明人： Yoshimasa KOBAYASHI ,  Yuji Katsuda

IPC分类号： H01B1/04

CPC分类号： C04B35/505 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/445 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  H01L21/6831

摘要： A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4N4O14 and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.

摘要翻译： 作为用于半导体制造装置的部件的静电卡盘的基板由含有氧化钇（Y 2 O 3），碳化硅（SiC）的氧化钇材料和含有稀土元素的化合物形成 （RE），Si，O和N.氧化钇材料含有RE8Si4N4O14作为含有稀土元素（RE），Si，O和N的化合物，其中RE可以是La或Y。Y8Si4N4O14在 包含主要成分Y 2 O 3和附属成分Si 3 N 4的原料的烧结工序。 Y8Si4N4O14和SiC在氧化钇材料中提高了机械强度和体积电阻率。

公开(公告)号：US20080237543A1

公开(公告)日：2008-10-02

申请号：US12050213

申请日：2008-03-18

申请人： Yoshimasa Kobayashi ,  Yuji Katsuda

发明人： Yoshimasa Kobayashi ,  Yuji Katsuda

IPC分类号： C09K3/00

CPC分类号： C04B35/488 ,  C04B35/505 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/6565 ,  C04B2235/662 ,  C04B2235/78 ,  C04B2235/96

摘要： There is provided a strengthened composite material that is able to improve yield, handling, and reliability when it is applied to members of semiconductor manufacturing apparatus. Five to 60 mol % ZrO2 is contained relative to Y2O3, and temperature after a sintering process is maintained between 1,200° C. to 1,500° C. for 5 minutes or longer or temperature falling speed to reach 1,200° C. is adjusted to 200° C./h or slower, thereby producing the composite material containing, as major crystalline phases, a Y2O3 solid solution in which ZrO2 is dissolved in Y2O3 and a ZrO2 solid solution in which Y2O3 is dissolved in ZrO2.

摘要翻译： 提供了一种加强的复合材料，当其应用于半导体制造装置的构件时，能够提高产量，处理和可靠性。 相对于Y 2 O 3 3含有5至60mol％的ZrO 2 O 3，烧结过程之后的温度保持在1200℃之间 至1500℃，5分钟或更长时间或达到1200℃的温度下降速度调节至200℃/小时或更慢，从而产生含有主要结晶相的复合材料Y 2 其中ZrO 2 O 3溶解在Y 2 O 3 3中的固体溶液和ZrO 2 其中Y 2 O 3 3 N 2的固体溶解在ZrO 2中。

公开(公告)号：US08236722B2

公开(公告)日：2012-08-07

申请号：US12549524

申请日：2009-08-28

申请人： Naomi Teratani ,  Yuji Katsuda ,  Yoshimasa Kobayashi

发明人： Naomi Teratani ,  Yuji Katsuda ,  Yoshimasa Kobayashi

IPC分类号： C04B35/00 ,  B32B9/00 ,  B32B19/00

CPC分类号： C04B35/111 ,  C04B35/62655 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3865 ,  C04B2235/445 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  H01L21/6833

摘要： An aluminum oxide sintered product including a layer phase containing a rare-earth element and fluorine among grains of aluminum oxide serving as a main component, or a phase containing a rare-earth element and fluorine along edges of grains of aluminum oxide serving as a main component. The product includes a phase containing a rare-earth element and a fluorine element among grains of aluminum oxide, the phase not being in the form of localized dots but in the form of line segments, when viewed in an SEM image. The product can be readily adjusted to have a volume resistivity in the range of 1×1013 to 1×1016 Ω·cm, the volume resistivity being calculated from a current value after the lapse of 1 minute from the application of a voltage of 2 kV/mm to the aluminum oxide sintered product at room temperature.

摘要翻译： 包含作为主要成分的氧化铝的粒子中含有稀土元素和氟的层相的氧化铝烧结体，或者以氧化铝为主体的边缘的含有稀土元素和氟的相 零件。 该产品包括在氧化铝晶粒中含有稀土元素和氟元素的相，当从SEM图像中观察时，该相不是局部点形式，而是以线段的形式。 该产品可以容易地调整为体积电阻率在1×1013至1×1016＆OHgr·cm范围内，体积电阻率是从施加电压2分钟经过1分钟后的电流值计算的 kV / mm至室温下的氧化铝烧结体。

公开(公告)号：US07915189B2

公开(公告)日：2011-03-29

申请号：US12400194

申请日：2009-03-09

申请人： Yoshimasa Kobayashi ,  Yuji Katsuda

发明人： Yoshimasa Kobayashi ,  Yuji Katsuda

IPC分类号： C04B35/505 ,  C04B35/488

CPC分类号： C04B35/505 ,  C04B35/62685 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3246 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/662 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/85 ,  C04B2235/96 ,  Y10T428/256

摘要： An electrostatic chuck that is a member for a semiconductor-manufacturing apparatus contains an yttrium oxide material containing first inorganic particles and second inorganic particles. The first inorganic particles form solid solutions in yttrium oxide, can be precipitated from yttrium oxide, and are present in grains of yttrium oxide. The second inorganic particles can form solid solutions in the first inorganic particles, are unlikely to form any solid solution in yttrium oxide, and are present at boundaries between the yttrium oxide grains. The first inorganic particles contain at least one of ZrO2 and HfO2. The second inorganic particles contain at least one selected from the group consisting of MgO, CaO, SrO, and BaO. The yttrium oxide material is produced in such a manner that solid solution particles are prepared by mixing and firing the first and second inorganic particles and are mixed with yttrium oxide and the mixture is fired.

摘要翻译： 作为半导体制造装置的构件的静电卡盘包含含有第一无机颗粒和第二无机颗粒的氧化钇材料。 第一种无机颗粒在氧化钇中形成固溶体，可以从氧化钇中沉淀出来，并存在于氧化钇颗粒中。 第二无机颗粒可以在第一无机颗粒中形成固溶体，不可能在氧化钇中形成任何固溶体，并且存在于氧化钇颗粒之间的边界处。 第一无机颗粒含有ZrO 2和HfO 2中的至少一种。 第二无机颗粒含有选自MgO，CaO，SrO和BaO中的至少一种。 以这样的方式制造氧化钇材料，即通过混合和烧制第一和第二无机颗粒并与氧化钇混合制备固溶体颗粒，并将混合物烧制。

公开(公告)号：US07776774B2

公开(公告)日：2010-08-17

申请号：US12050213

申请日：2008-03-18

申请人： Yoshimasa Kobayashi ,  Yuji Katsuda

发明人： Yoshimasa Kobayashi ,  Yuji Katsuda

IPC分类号： C04B35/505 ,  C04B35/488

CPC分类号： C04B35/488 ,  C04B35/505 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/6565 ,  C04B2235/662 ,  C04B2235/78 ,  C04B2235/96

摘要： There is provided a strengthened composite material that is able to improve yield, handling, and reliability when it is applied to members of semiconductor manufacturing apparatus. Five to 60 mol % ZrO2 is contained relative to Y2O3, and temperature after a sintering process is maintained between 1,200° C. to 1,500° C. for 5 minutes or longer or temperature falling speed to reach 1,200° C. is adjusted to 200° C./h or slower, thereby producing the composite material containing, as major crystalline phases, a Y2O3 solid solution in which ZrO2 is dissolved in Y2O3 and a ZrO2 solid solution in which Y2O3 is dissolved in ZrO2.

摘要翻译： 提供了一种加强的复合材料，当其应用于半导体制造装置的构件时，能够提高产量，处理和可靠性。 相对于Y 2 O 3含有5〜60摩尔％的ZrO 2，烧结后的温度保持在1200℃〜1500℃，5分钟以上或达到1200℃的温度下降速度调节至200℃ C./h或更慢，由此生产含有ZrO 2溶解在Y 2 O 3中的Y 2 O 3固溶体和Y 2 O 3溶解在ZrO 2中的ZrO 2固溶体作为主要结晶相的复合材料。

公开(公告)号：US07744780B2

公开(公告)日：2010-06-29

申请号：US12369106

申请日：2009-02-11

申请人： Yoshimasa Kobayashi ,  Yuji Katsuda

发明人： Yoshimasa Kobayashi ,  Yuji Katsuda

IPC分类号： H01B1/08 ,  C04B35/505

CPC分类号： C04B35/505 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/445 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  H01L21/6831

摘要： A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4N4O14 and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.

摘要翻译： 作为用于半导体制造装置的部件的静电卡盘的基板由含有氧化钇（Y 2 O 3），碳化硅（SiC）的氧化钇材料和含有稀土元素的化合物形成 （RE），Si，O和N.氧化钇材料含有RE8Si4N4O14作为含有稀土元素（RE），Si，O和N的化合物，其中RE可以是La或Y。Y8Si4N4O14在 包含主要成分Y 2 O 3和附属成分Si 3 N 4的原料的烧结工序。 Y8Si4N4O14和SiC在氧化钇材料中提高了机械强度和体积电阻率。