摘要:
A connection plate for battery terminals capable of inhibiting a base and a battery terminal connection portion from being detached from each other is provided. This connection plate for battery terminals (2) includes a battery terminal connection portion (4) fitted into a second hole (31) of a base (3) made of first metal, including a hole for connection (42) into which a second battery terminal (1b) is inserted and a flange portion (4b), while the battery terminal connection portion is constituted by at least a first layer (40) made of second metal, arranged on a side opposite to the base and a second layer (41) made of third metal, arranged between the base and the first layer.
摘要:
A connection plate for battery terminals capable of inhibiting a first member and a second member from being detached from each other is provided. This bus bar 2 (connection plate for battery terminals) includes a first member (3) including a first hole (30) and an embedding hole (31), made of first metal and a second member (4) having a second hole (42), including a base (40) made of second metal, embedded in the embedding hole of the first member, while an intermetallic compound layer (5) containing at least one of the first metal and the second metal is formed on an interface between the embedding hole of the first member and the second member.
摘要:
A connection plate for battery terminals capable of inhibiting a base and a battery terminal connection portion from being detached from each other is provided. This connection plate for battery terminals (2) includes a battery terminal connection portion (4) fitted into a second hole (31) of a base (3) made of first metal, including a hole for connection (42) into which a second battery terminal (1b) is inserted and a flange portion (4b), while the battery terminal connection portion is constituted by at least a first layer (40) made of second metal, arranged on a side opposite to the base and a second layer (41) made of third metal, arranged between the base and the first layer
摘要:
A connection plate for battery terminals capable of inhibiting a first member and a second member from being detached from each other is provided. This bus bar 2 (connection plate for battery terminals) includes a first member (3) including a first hole (30) and an embedding hole (31), made of first metal and a second member (4) having a second hole (42), including a base (40) made of second metal, embedded in the embedding hole of the first member, while an intermetallic compound layer (5) containing at least one of the first metal and the second metal is formed on an interface between the embedding hole of the first member and the second member.
摘要:
A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.
摘要:
A hermetic sealing cap member capable of suppressing deterioration of characteristics of an electronic component resulting from a sealant such as solder coming into contact with the electronic component in a package is obtained. This hermetic sealing cap, which is a hermetic sealing cap employed for an electronic component storing package for storing an electronic component (5, 34), comprises a hermetic sealing cap member (11, 41), a first plating layer (12, 42) formed at least on a region other than a region of the hermetic sealing cap member formed with a sealant (3, 32) and a second plating layer (13, 43), formed on the region of the hermetic sealing cap member on which the sealant is arranged, containing a material superior in wettability with the sealant to the first plating layer.
摘要:
The purpose of the present invention is to improve releasability from the jig of a method of producing a minute metal ball by heating and melting and then cooling a metal piece of specific dimensions and further, to present a metal ball with very good dimensional accuracy and sphericity, even though diameter is minute. By means of the above-mentioned method, very good releasability between the metal ball and jig after melting and cooling is obtained and long-term use of the tool becomes possible by placing a metal piece on a jig with a layer of fine powder of BN, AlN or C having low wettability with the metal piece in between, or by making a layer of fine powder adhere to the surface of the metal piece and then placing this metal piece on the jig or shaking and arranging individual metal pieces in holes in the same. Moreover, the layer of fine powder on the jig or the surface of the metal piece used in the method of the present invention does not prevent spheroidising of the metal piece under surface tension during melting, and there is no deterioration of surface properties of the metal ball that is obtained and it is thereby possible to markedly improve dimensional accuracy and sphericity of the metal ball.
摘要:
A high breakdown voltage semiconductor device is constituted, in either a semiconductor substrate or a lightly doped well diffused layer having deep diffusion depth, of a heavily doped diffused layer as a heavily doped drain diffused layer, a lightly doped diffused layer having deeper diffusion depth that the heavily doped diffused layer, and a lightly doped diffused layer adjacent to the heavily doped diffused layer called as an offset diffused layer. The heavily doped diffused layer functions as a part of the drain diffused layer, and has depth around 0.3 to 0.6 micron meter, and impurity concentration of 10.sup.19 to 10.sup.20 impurities/cm.sup.3. The width of the heavily doped diffused layer is set to 4 to 5 micron meters or greater. If the width of the heavily doped diffused layer is set less than this value, the breakdown voltage at an edge is lowered, and thereby impairment of the breakdown voltage occurs. The lightly doped diffused layer also functions as a part of the drain diffused layer. The lightly doped diffused layer is arranged, in particular, to relax the gradient of the impurity concentration of the drain diffused layer due to the heavily doped diffused layer. If the impurity concentration of the lightly doped diffused layer is too low, the resistance becomes high, so that adequate current can not be obtained. In the high breakdown voltage transistor, a gate electrode is formed above the edge of the lightly doped diffused layer. The breakdown voltage of the device is determined by the size of the offset diffused layer and its impurity concentration.
摘要:
A more thinnable hermetic sealing cap can be provided. This hermetic sealing cap (10) is employed for an electronic component housing package (100) housing an electronic component (40) and includes a cap body portion (1) mainly composed of Ti.
摘要:
A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.