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25 条记录 (耗时 0.019 秒)

    Method of forming Josephson junction devices
    2.
    发明授权
    Method of forming Josephson junction devices 失效
    形成约瑟夫逊连接装置的方法

    公开(公告)号：US4904619A

    公开(公告)日：1990-02-27

    申请号：US150796

    申请日：1988-02-01

    申请人： Hirozi Yamada ,  Sachiko Kizaki ,  Hiroyuki Mori ,  Yoshinobu Tarutani ,  Mikio Hirano

    发明人： Hirozi Yamada ,  Sachiko Kizaki ,  Hiroyuki Mori ,  Yoshinobu Tarutani ,  Mikio Hirano

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L39/24

    CPC分类号： H01L39/2493 ,  Y10S148/089 ,  Y10S505/82 ,  Y10S505/832

    摘要： A method of producing a Josephson junction device consisting of thin films of superconducting materials such as niobium and niobium nitride that work at cryogenic temperatures, in which a base electrode layer, tunnel barrier layer and a counterelectrode layer constituting a Josephson junction are formed on a substrate. In order to form a desired electrode pattern on the counterelectrode layer, a resist pattern is used as a mask for dry etching, followed by a plasma ashing process for ablating part of the resist in order to form a terrace-shaped portion at the edges and corners of the counterelectrode pattern by reforming and shrinking the cross-sectional geometry of the resist. Then, a thin insulating film for covering the edged layers is deposited over the entire surface of substrate, followed by the removal of said resist pattern together with said insulating film deposited on said resist pattern in order to form a protecting layer around the counterelectrode pattern. The substrate further undergoes subsequent stages to produce a Josephson junction device.

    摘要翻译： 一种制造约瑟夫逊结器件的方法，该器件由在低温下工作的诸如铌和氮化铌的超导材料的薄膜构成，其中基底电极层，隧道势垒层和构成约瑟夫逊结的反电极层形成在衬底上 。 为了在反电极层上形成期望的电极图案，使用抗蚀剂图案作为干蚀刻的掩模，接着进行用于烧蚀部分抗蚀剂的等离子体灰化处理，以便在边缘处形成平台状部分， 通过重整和收缩抗蚀剂的横截面几何形状，反电极图案的拐角。 然后，在衬底的整个表面上沉积用于覆盖边缘层的薄绝缘膜，然后与沉积在抗蚀剂图案上的所述绝缘膜一起去除所述抗蚀剂图案，以形成围绕反电极图案的保护层。 衬底进一步经历后续阶段以产生约瑟夫逊结器件。

    Oxide-superconduction grain boundary tunneling device
    8.
    发明授权
    Oxide-superconduction grain boundary tunneling device 失效
    氧化物超导晶界隧道装置

    公开(公告)号：US5424281A

    公开(公告)日：1995-06-13

    申请号：US9082

    申请日：1993-01-26

    申请人： Yoshinobu Tarutani ,  Ushio Kawabe

    发明人： Yoshinobu Tarutani ,  Ushio Kawabe

    IPC分类号： H01L39/22 ,  H01L39/24 ,  H01B12/00

    CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/776

    摘要： An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译： 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上，并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成，并且由元素F，Cl，Br，I，C，O，S，P或N的任何材料构成，由这些元素组成的混合物和含 这种元素，该材料被引入晶粒边界附近和/或晶粒间隙附近。