Nonvolatile memory and method of erasing for nonvolatile memory

    公开(公告)号:US20060077718A1

    公开(公告)日:2006-04-13

    申请号:US11284949

    申请日:2005-11-23

    IPC分类号: G11C16/04

    CPC分类号: G11C16/3477 G11C16/16

    摘要: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

    Nonvolatile memory and method of erasing for nonvolatile memory
    2.
    发明授权
    Nonvolatile memory and method of erasing for nonvolatile memory 有权
    非易失性存储器和擦除非易失性存储器的方法

    公开(公告)号:US07072224B2

    公开(公告)日:2006-07-04

    申请号:US11284949

    申请日:2005-11-23

    IPC分类号: G11C11/34

    CPC分类号: G11C16/3477 G11C16/16

    摘要: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

    摘要翻译: 要增加存储器单元的重写次数,并且显着提高数据读取的可靠性。 在要擦除存储器单元中的数据的情况下,切换要施加到每个存储单元的控制栅极的擦除电压,同时切换到任意不同电平的电压,作为控制栅极电压(=软擦除 电压)根据在每个存储单元的浮置栅极处累积的电荷量来实现,以便保持施加到存储单元的隧道膜的电压基本上恒定。 在接受擦除命令时,CPU向解码器提供控制信号,并且基于所得到的解码信号,擦除电压切换电路产生一定电平的软擦除电压。 之后,当从一个切换到另一个不同电平的软擦除电压时,存储单元中的数据被擦除。 在完成擦除存储器单元中的数据时,执行擦除验证。

    Nonvolatile memory and method of erasing for nonvolatile memory

    公开(公告)号:US07068541B2

    公开(公告)日:2006-06-27

    申请号:US10700592

    申请日:2003-11-05

    IPC分类号: G11C11/34

    CPC分类号: G11C16/3477 G11C16/16

    摘要: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

    FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD
    4.
    发明申请
    FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD 审中-公开
    成膜组合物,形成图案的方法和三维模具

    公开(公告)号:US20090155546A1

    公开(公告)日:2009-06-18

    申请号:US12064342

    申请日:2006-08-28

    IPC分类号: B32B5/00 G03F7/20 G03F7/004

    摘要: Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n  (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.

    摘要翻译: 公开了一种成膜组合物,其可以通过图像显影后产生的不均匀表面形态的作用形成具有增强的对比度的图案,以及使用该组合物形成图案的方法和三维模具。 一种组合物,其包含由化学式(A)表示的烷氧基金属化合物的水解产物和缩合产物中的至少一种,所述组合物另外包含可以响应于光和热中的至少一种以控制溶解度的化合物 成品薄膜在开发中的解决方案。 <?in-line-formula description =“In-line Formulas”end =“lead”?> R1n-M(OR2)4-n(A)<?in-line-formula description =“In-line Formulas”end =“尾”→其中M表示硅,锗,钛,钽,铟或锡; R1表示氢原子或一价有机基团; R2表示一价有机基团; n表示1〜3的整数。

    Purification of inosine from guanosine
    6.
    发明授权
    Purification of inosine from guanosine 失效
    从肌苷提纯肌苷

    公开(公告)号:US4958017A

    公开(公告)日:1990-09-18

    申请号:US283805

    申请日:1988-12-13

    IPC分类号: C07H19/16

    CPC分类号: C07H19/16

    摘要: An industrially advantageous process for producing an inosine-guanosine mixture having a higher weight ratio of guanosine/inosine than a starting mixture of nucleoside crystals and inosine subtantially free of guanosine from which comprises adjusting an aqueous fluid containing 10 to 30% by weight/volume of a nucleoside mixture to a pH of 9.1 to 9.5, wherein the total amount of inosine and guanosine is more than 95% by weight based on dry matters and the weight ratio of guanosine/inosine is 0.5 to 1, separating the resultant solids and then crystallizing inosine from the resulting solution.

    摘要翻译: 一种工业上有利的生产肌苷 - 鸟苷混合物的方法,其比鸟苷/肌苷重量比高于核苷结晶的起始混合物和肌苷酸不含鸟苷,其中包括调节含有10至30重量%/体积的 核苷混合物,其pH为9.1至9.5,其中肌苷和鸟苷的总量基于干物质大于95重量%,并且鸟苷/肌苷的重量比为0.5至1,分离所得固体,然后结晶 肌苷从所得溶液中。

    COMPLEX EVENT PROCESSING APPARATUS AND COMPLEX EVENT PROCESSING METHOD
    7.
    发明申请
    COMPLEX EVENT PROCESSING APPARATUS AND COMPLEX EVENT PROCESSING METHOD 审中-公开
    复杂事件处理装置和复杂事件处理方法

    公开(公告)号:US20120084317A1

    公开(公告)日:2012-04-05

    申请号:US13187627

    申请日:2011-07-21

    IPC分类号: G06F17/30

    摘要: When a detecting complex event condition expression is changed, a rule comparing unit compares the complex event condition expressions before and after the change. The changed portion identifying unit identifies the changed portion based on the comparison result, and the parallel operating unit operates the complex event condition expressions before and after the change in parallel for the detecting complex event condition expression including the identified changed portion. In this manner, the complex event processing apparatus disclosed therein can dynamically change a detecting complex event condition expression used in the complex event processing.

    摘要翻译: 当检测复合事件条件表达式改变时,规则比较单元比较改变之前和之后的复杂事件条件表达式。 改变部分识别单元基于比较结果识别改变的部分,并行操作单元对包括所识别的改变部分的检测复数事件条件表达式并行地改变之前和之后操作复数事件条件表达式。 以这种方式,其中公开的复杂事件处理装置可以动态地改变在复杂事件处理中使用的检测复合事件条件表达式。