摘要:
The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.
摘要:
The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.
摘要:
The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.
摘要:
Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.
摘要:
An article of magnesium or its alloy having a surface layer containing magnesium condensed phosphate and magnesium phosphate, which can be produced by treating an article of magnesium or its alloy with a treating liquid containing 1,000 to 20,000 ppm of alkaline metal ions, 1,000 to 50,000 ppm of condensed phosphate ions, and 100 to 20,000 ppm of borate ions, and having pH of at least 8. The treated article has good corrosion resistance, and a coating can be formed on the surface of the article with good adhesion.
摘要:
An industrially advantageous process for producing an inosine-guanosine mixture having a higher weight ratio of guanosine/inosine than a starting mixture of nucleoside crystals and inosine subtantially free of guanosine from which comprises adjusting an aqueous fluid containing 10 to 30% by weight/volume of a nucleoside mixture to a pH of 9.1 to 9.5, wherein the total amount of inosine and guanosine is more than 95% by weight based on dry matters and the weight ratio of guanosine/inosine is 0.5 to 1, separating the resultant solids and then crystallizing inosine from the resulting solution.
摘要:
When a detecting complex event condition expression is changed, a rule comparing unit compares the complex event condition expressions before and after the change. The changed portion identifying unit identifies the changed portion based on the comparison result, and the parallel operating unit operates the complex event condition expressions before and after the change in parallel for the detecting complex event condition expression including the identified changed portion. In this manner, the complex event processing apparatus disclosed therein can dynamically change a detecting complex event condition expression used in the complex event processing.
摘要:
A material for forming an antireflective film that enables a large difference in etching rates to be obtained between a resist pattern and an antireflective film.A composition for forming an antireflective film includes a siloxane polymer containing a light-absorbing compound group.
摘要:
In order to provide an electronic device permitting a reduction in size or an expansion of its internal space while maintaining its mechanical strength, a structure having mechanical strength is integrally formed with hinges for fitting a lid-shaped display unit to a box-shaped body and a carrying handle projecting outward from the box-shaped body.
摘要:
In order to eliminate erroneous reading of data by preventing noise which might otherwise be transmitted at the data read time through parasitic capacitance in the data lines to other data lines, switches (Qt1 and Qt1′) are interposed between a sense amplifier (SA) for amplifying the potential of a data line (DL) and the data line, and the sense amplifier is fed with an operating voltage after the potential of the data line is transmitted to the sense amplifier, and the switch is turned off.