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1.发明申请Composition For Forming Antireflective Film And Wiring Forming Method Using Same 审中-公开用于形成抗反射膜的组合物和使用其的布线形成方法公开(公告)号：US20080318165A1
公开(公告)日：2008-12-25
申请号：US11575299
申请日：2005-08-31
CPC分类号： H01L21/31144 , C08G77/04 , C08G77/70 , C09D183/04 , G03F7/0757 , G03F7/091 , C08L83/00
摘要： A material for forming an antireflective film that enables a large difference in etching rates to be obtained between a resist pattern and an antireflective film.A composition for forming an antireflective film includes a siloxane polymer containing a light-absorbing compound group.
摘要翻译： 用于形成能够在抗蚀剂图案和抗反射膜之间获得蚀刻速率差大的抗反射膜的材料。 用于形成抗反射膜的组合物包括含有光吸收性化合物基团的硅氧烷聚合物。
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2.发明申请Composition for forming anti-reflective coating film, anti-reflective coating film composed of the composition, and method of forming resist pattern using the composition 审中-公开用于形成抗反射涂膜的组合物，由该组合物组成的抗反射涂膜以及使用该组合物形成抗蚀剂图案的方法公开(公告)号：US20050267277A1
公开(公告)日：2005-12-01
申请号：US11131205
申请日：2005-05-18
IPC分类号： G03F7/11 , C08G77/26 , G03F7/004 , G03F7/075 , H01L21/027
CPC分类号： G03F7/091 , C09D183/04 , G03F7/0752 , C08L83/00
摘要： The composition for forming an anti-reflective coating film of the present invention has a hard-volatility and high coating performance. In particular, when the 193 nm ArF excimer laser beam source is applied, the composition exhibits a higher etching property. Therefore, the composition is suitably for forming an anti-reflective coating film with no voids and for a method of forming resist patterns using the composition. The composition for forming an anti-reflective coating film comprising; (A) a hard-volatility light absorbing compound, (B) siloxanepolymer, and (C) a solvent.
摘要翻译： 用于形成本发明的抗反射涂膜的组合物具有硬挥发性和高涂层性能。 特别地，当应用193nm ArF准分子激光束源时，组合物表现出较高的蚀刻性能。 因此，该组合物适合用于形成无空隙的抗反射涂膜和使用该组合物形成抗蚀剂图案的方法。 用于形成抗反射涂膜的组合物，包括： （A）硬挥发性光吸收化合物，（B）硅氧烷聚合物和（C）溶剂。
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公开(公告)号：US08206509B2
公开(公告)日：2012-06-26
申请号：US12958295
申请日：2010-12-01
申请人： Takahiro Eto , Takuya Ohhashi , Masaru Takahama , Daijiro Mori , Akira Kumazawa
发明人： Takahiro Eto , Takuya Ohhashi , Masaru Takahama , Daijiro Mori , Akira Kumazawa
CPC分类号： H01L21/02063 , G03F7/425 , H01L21/31133
摘要： Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.
摘要翻译： 本发明提供了一种用于光刻的清洗液，其与钨相比具有优异的防腐蚀性能，并且与抗蚀剂膜等相比具有优异的去除性能，以及使用光刻用清洁液形成布线的方法。 本发明的光刻用清洗液含有下述通式（1）表示的季铵氢氧化物，水溶性有机溶剂，水，无机盐和防腐蚀剂。 在通式（1）中，R 1表示烷基或具有1-17个碳原子的芳基，R 2表示具有1-13个碳原子的烷基。
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公开(公告)号：US08354365B2
公开(公告)日：2013-01-15
申请号：US13016868
申请日：2011-01-28
申请人： Takuya Ohhashi , Masaru Takahama , Takahiro Eto , Daijiro Mori , Shigeru Yokoi
发明人： Takuya Ohhashi , Masaru Takahama , Takahiro Eto , Daijiro Mori , Shigeru Yokoi
CPC分类号： H01L21/31133 , C11D7/06 , C11D7/3209 , C11D7/5022 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/76814
摘要： Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.
摘要翻译： 本发明提供了一种用于光刻的清洗液体，其与ILD材料相比具有优异的防腐蚀性能，并且与抗蚀剂膜和底部抗反射涂膜相比具有优异的去除性能，以及使用光刻用清洗液形成布线的方法。 根据本发明的用于光刻的清洗液包括季铵氢氧化物，水溶性有机溶剂，水和无机碱。 水溶性有机溶剂含有偶极矩不小于3.0D的高极性溶剂，二醇醚溶剂和多元醇，高极性溶剂和二醇醚溶剂的总含量不低于30％ ，相对于用于光刻的液体的总质量。
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公开(公告)号：US07939590B2
公开(公告)日：2011-05-10
申请号：US11911339
申请日：2006-03-16
申请人： Hiroyuki Iida , Masaru Takahama
发明人： Hiroyuki Iida , Masaru Takahama
CPC分类号： H01L21/02126 , C08K3/10 , C08K3/11 , C08K3/22 , C08L83/04 , C09D7/61 , C09D7/65 , C09D171/02 , C09D183/04 , H01L21/02203 , H01L21/3122 , Y10T428/31663 , C08L83/00
摘要： A composition for forming a silica-based coating film includes a siloxane polymer and an alkali metal compound. The siloxane polymer is preferably a hydrolysis-condensation product of a silane compound having a hydrolyzable group. Sodium, lithium, potassium, rubidium, or cesium, or the like is used as the alkali metal of the alkali metal compound. Furthermore, the alkali metal compound is preferably a nitrate, sulfate, carbonate, oxide, chloride, bromide, fluoride, iodide, or hydroxide of the above alkali metal. This composition for forming a silica-based coating film may also include a pore-forming material. At least one material selected from amongst polyalkylene glycols and alkyl-terminated derivatives thereof is used as the pore-forming material.
摘要翻译： 用于形成二氧化硅基涂膜的组合物包括硅氧烷聚合物和碱金属化合物。 硅氧烷聚合物优选为具有可水解基团的硅烷化合物的水解缩合产物。 钠，锂，钾，铷或铯等用作碱金属化合物的碱金属。 此外，碱金属化合物优选为上述碱金属的硝酸盐，硫酸盐，碳酸盐，氧化物，氯化物，溴化物，氟化物，碘化物或氢氧化物。 用于形成二氧化硅基涂膜的组合物还可以包括成孔材料。 使用选自聚亚烷基二醇及其烷基封端的衍生物中的至少一种材料作为造孔材料。
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公开(公告)号：US20090018247A1
公开(公告)日：2009-01-15
申请号：US11911339
申请日：2006-03-16
申请人： Hiroyuki Iida , Masaru Takahama
发明人： Hiroyuki Iida , Masaru Takahama
CPC分类号： H01L21/02126 , C08K3/10 , C08K3/11 , C08K3/22 , C08L83/04 , C09D7/61 , C09D7/65 , C09D171/02 , C09D183/04 , H01L21/02203 , H01L21/3122 , Y10T428/31663 , C08L83/00
摘要： A composition for forming a silica-based coating film includes a siloxane polymer and an alkali metal compound. The siloxane polymer is preferably a hydrolysis-condensation product of a silane compound having a hydrolyzable group. Sodium, lithium, potassium, rubidium, or cesium, or the like is used as the alkali metal of the alkali metal compound. Furthermore, the alkali metal compound is preferably a nitrate, sulfate, carbonate, oxide, chloride, bromide, fluoride, iodide, or hydroxide of the above alkali metal. This composition for forming a silica-based coating film may also include a pore-forming material. At least one material selected from amongst polyalkylene glycols and alkyl-terminated derivatives thereof is used as the pore-forming material.
摘要翻译： 用于形成二氧化硅基涂膜的组合物包括硅氧烷聚合物和碱金属化合物。 硅氧烷聚合物优选为具有可水解基团的硅烷化合物的水解缩合产物。 钠，锂，钾，铷或铯等用作碱金属化合物的碱金属。 此外，碱金属化合物优选为上述碱金属的硝酸盐，硫酸盐，碳酸盐，氧化物，氯化物，溴化物，氟化物，碘化物或氢氧化物。 用于形成二氧化硅基涂膜的组合物还可以包括成孔材料。 使用选自聚亚烷基二醇及其烷基封端的衍生物中的至少一种材料作为造孔材料。
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