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    Solid-state imaging device with layered microlenses and method for manufacturing same
    4.
    发明授权
    Solid-state imaging device with layered microlenses and method for manufacturing same 有权
    具有分层微透镜的固态成像装置及其制造方法

    公开(公告)号：US09159760B2

    公开(公告)日：2015-10-13

    申请号：US13613261

    申请日：2012-09-13

    申请人： Yoichi Ootsuka ,  Tomoyuki Yamashita ,  Kiyotaka Tabuchi ,  Yoshinori Toumiya ,  Akiko Ogino

    发明人： Yoichi Ootsuka ,  Tomoyuki Yamashita ,  Kiyotaka Tabuchi ,  Yoshinori Toumiya ,  Akiko Ogino

    IPC分类号： H01L27/146 ,  H04N5/335

    CPC分类号： H01L27/14627 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14685 ,  H04N5/335

    摘要： A solid-state imaging device with microlenses having a first lens layer and a second lens layer, the second lens layer being formed at least at a periphery of each microlens with either a portion of the second lens layer present at a central portion of each of the microlenses being thinner than a portion of the second lens layer present at the periphery of the microlens or no portion of the second lens layer being present at the central portion of each of the first microlenses. Between first pixel portions there is an interpixel gap, and the solid-state imaging device includes light blocking layers in alignment with the gaps.

    摘要翻译： 一种具有微透镜的固态成像装置，具有第一透镜层和第二透镜层，所述第二透镜层至少在每个微透镜的周边形成，其中所述第二透镜层的一部分存在于每个微透镜的中心部分 所述微透镜比存在于所述微透镜周边的所述第二透镜层的部分薄，或者所述第二透镜层的部分不存在于所述第一微透镜的每一个的中心部分。 在第一像素部分之间存在像素间隙，并且固态成像装置包括与间隙对准的遮光层。

    Solid-state image pickup device and electronic apparatus
    6.
    发明授权
    Solid-state image pickup device and electronic apparatus 有权
    固态图像拾取装置和电子装置

    公开(公告)号：US08300128B2

    公开(公告)日：2012-10-30

    申请号：US12435502

    申请日：2009-05-05

    申请人： Yoshinori Toumiya

    发明人： Yoshinori Toumiya

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H01L27/14625 ,  H01L27/14629 ,  H01L27/14685

    摘要： A solid-state image pickup device includes a semiconductor substrate having a light-incident surface, a plurality of pixels arranged on the light-incident surface, a photodiode arranged in each of the pixels, an insulating film arranged on the semiconductor substrate and configured to cover the photodiodes, wirings embedded in the insulating film, an etching stopper film distant from the lowermost wiring among the wirings, arranged adjacent to the semiconductor substrate, configured to cover at least a region where each of the photodiodes is arranged, and composed of silicon carbide, a trench arranged above each of the photodiodes so as to reach the etching stopper film, and an optical waveguide with which each of the trenches is filled, the optical waveguide having a higher refractive index than the insulating film.

    摘要翻译： 固态摄像装置包括具有入射面的半导体基板，配置在光入射面上的多个像素，配置在各像素中的光电二极管，配置在半导体基板上的绝缘膜， 覆盖光电二极管，嵌入绝缘膜中的布线，与布置在半导体衬底附近的布线之间的距离最下布线的蚀刻阻挡膜，被配置为至少覆盖每个光电二极管布置的区域，并由硅 碳化物，布置在每个光电二极管上方以便到达蚀刻阻挡膜的沟槽，以及填充有每个沟槽的光波导，光波导具有比绝缘膜更高的折射率。

    Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera
    7.
    发明授权
    Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera 有权
    具有光波导的固态图像拾取装置，固态图像拾取装置的制造方法和照相机

    公开(公告)号：US08003929B2

    公开(公告)日：2011-08-23

    申请号：US12579593

    申请日：2009-10-15

    申请人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    发明人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    IPC分类号： H01L27/00 ,  H01J3/14

    CPC分类号： H01L27/14687 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

    摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.

    摘要翻译： 固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分， 其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜 覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层， 折射率高于氧化硅。

    Method of manufacturing solid state imaging device, and solid state imaging device
    8.
    发明授权
    Method of manufacturing solid state imaging device, and solid state imaging device 失效
    固态成像装置的制造方法以及固态成像装置

    公开(公告)号：US08603852B2

    公开(公告)日：2013-12-10

    申请号：US12792355

    申请日：2010-06-02

    申请人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

    发明人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

    IPC分类号： H01L21/302

    CPC分类号： H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/148

    摘要： Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

    摘要翻译： 本文公开了一种制造固态成像装置的方法，包括以下步骤：在半导体衬底的光接收区域中形成光接收部分; 在所述半导体衬底的焊盘区域中形成焊盘部分; 在所述光接收部分和所述焊盘部分上形成微透镜材料层; 向所述微透镜材料层提供对应于所述光接收部分的微透镜; 在微透镜材料层上形成低反射材料层; 在所述焊盘部分上蚀刻所述微透镜材料层和所述低反射材料层以形成开口; 并通过常温氧自由基处理赋予低反射材料层的表面和开口的内部亲水性。

    SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGING APPARATUS
    10.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGING APPARATUS 有权
    固态成像装置，其制造方法和成像装置

    公开(公告)号：US20100007779A1

    公开(公告)日：2010-01-14

    申请号：US12496963

    申请日：2009-07-02

    申请人： Masashi Nakata ,  Haruhiko Ajisawa ,  Naotsugu Yoshida ,  Yasuhiro Nakano ,  Junichi Furukawa ,  Yoshinori Toumiya ,  Junichiro Fujimagari

    发明人： Masashi Nakata ,  Haruhiko Ajisawa ,  Naotsugu Yoshida ,  Yasuhiro Nakano ,  Junichi Furukawa ,  Yoshinori Toumiya ,  Junichiro Fujimagari

    IPC分类号： H04N5/335 ,  H01L31/14 ,  H01L31/02 ,  H04N5/232 ,  H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14685 ,  H01L27/14687

    摘要： A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.

    摘要翻译： 固态成像装置包括具有包括光电转换部分的像素区域的半导体衬底，包括导体线的布线部分，并且在其间具有绝缘膜的半导体衬底上设置有连接到导体线的金属焊盘，衬垫 涂覆金属垫的涂层绝缘膜和波导材料层。 布线部分和焊盘覆盖绝缘膜在光电转换部分上各自具有开口，并且开口彼此连续地限定具有开放侧和封闭侧的波导开口。 波导材料层设置在波导管开口和焊垫涂层绝缘膜之间，其间具有钝化层。 垫涂层绝缘膜具有50至250nm的厚度和限定开口的面。 脸部倾斜以朝向开口的开放侧分开。