摘要:
Apparatus for wrapping the end surface of a cylindrical object having an apparatus fixing frame placed on a base via an ultra low friction sliding mechanism, a back pressure P.sub.2 suitable for the kind of wrapping paper being imposed on the wrapping paper and the free end of the projecting portion of the wrapping paper being gripped at plural points in the circumferential direction so as to draw the frame toward the axial center of the cylindrical coil whereby the free end of the projecting portion of the wrapping paper is constrained by tension produced on the projecting wrapping paper throughout the folding operation with the result that regular pleats are formed to assure an attractive transport package.
摘要:
A method and apparatus for making a cylindrical package in which a cylindrically shaped coil of a long steel strip having a peripheral surface, two end surfaces and a hollow cylindrical center is completely wrapped with a wrapping sheet material so as to have neatly folded closures on both end surfaces with a ring member inserted into the cylindrical hollow center of the coil. At first the wrapping sheet is wrapped around the coil so as to project from either end of the coil by a length l greater than the thickness t between the outermost layer and the innermost layer of the coil. The projecting portions are folded onto the end surfaces by pusher plates with pleat forming rods provided therebetween to form crease lines. The pleated portions of the sheet are flattened onto the folded sheet by the sliding action of pusher plates, and then a ring member is fitted into the cylindrical hollow center of the coil at either end with the edges of the folded sheet pressed underneath so that the wrapping is completed without use of an adhesive.
摘要:
A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.
摘要:
A label having an identifier 41L is applied to the upper left corner of the key top of each character key in a left hand region of a keyboard device. A label having an identifier 41R is applied to the upper right corner of the key top of each character key in a right hand region. The identifier 41L is a mark of a reversed L shape and the identifier 41R is a mark of a mirror image pattern of the identifier 41L. Further, different colors are applied to the identifiers 41L and 41R depending on regions for individual fingers. As a consequence, the identifiers 41L and 41R have a function to visually display information representing which hand is to be used to press a key and information representing which finger is to be used to press the key. The keyboard device enables a user to naturally understand the arrangement of the keys and the use of the fingers.
摘要:
A semiconductor device includes a substrate, first insulating film carried on the substrate, first wiring layer carried on the first insulating film and an interlayer insulating film overlying the first wiring layer and first insulating film. The interlayer insulating film has a top portion overlying the first wiring layer and a pair of sidewall portions. The sidewall portions of the interlayer insulating film overlie the first insulating film and the sides of the first wiring layer. The sidewall portions have progressively increasing width in progressing towards the substrate. The device also includes a second wiring layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate adjacent to the first insulating film.
摘要:
A magnet pump includes a synthetic resin casing, divided into a front casing and a rear casing and configured to internally form an impeller housing chamber and a magnet can housing chamber contiguous thereto, having an inlet and an outlet for a target fluid to be transferred. The casing forms an eddy chamber at a position for dividing the front casing and the rear casing along the outer rim of the impeller housing chamber to surround the outer rim of the impeller. The eddy chamber has overhangs formed at an entry of the eddy chamber hanging over from both sides in the rotational-axis direction of the impeller.
摘要:
The invention provides a gene specifically expressed in haploid cells of the testis. The gene is located on the X-chromosome of a mammal, is specifically expressed in haploid cells of the testis, has a base sequence which can hybridize, under stringent conditions, with DNA including a base sequence in SEQ ID NO: 1, and encodes a protein including an amino acid sequence having a homology of at least 25% with an amino acid sequence encoded by the drosophila gcl gene.
摘要翻译:本发明提供了在睾丸的单倍体细胞中特异表达的基因。 该基因位于哺乳动物的X染色体上,在睾丸的单倍体细胞中特异性表达,具有可在严格条件下与包含SEQ ID NO:1中的碱基序列的DNA杂交的碱基序列,并编码 包括与果蝇gcl基因编码的氨基酸序列具有至少25%的同源性的氨基酸序列的蛋白质。
摘要:
A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.
摘要:
An antifuse memory cell having a P.sup.+ polysilicon doping in a region directly under an intrinsic silicon programming layer. The P.sup.+ polysilicon region is surrounded by an N.sup.- polysilicon doped region, and the two regions are sandwiched between layers of silicon dioxide insulation. The interface between the two regions is a P-N junction, in fact, a diode. The diode does not suffer from a diffusion current that increases with increasing levels of N.sup.- doping, therefore the N.sup.- polysilicon can be heavily doped to yield a very conductive bit line interconnect for a memory matrix. The interconnect line widths can be very narrow, and further microminiaturization is aided thereby. The top metalization is aluminum and serves as a word line interconnect in the memory matrix.
摘要翻译:具有在本征硅编程层之下的区域中具有P +多晶硅掺杂的反熔丝存储单元。 P +多晶硅区域被N多晶硅掺杂区域包围,并且两个区域夹在二氧化硅绝缘层之间。 两个区域之间的界面是P-N结,实际上是一个二极管。 二极管不会受到随着N-掺杂水平的增加而增加的扩散电流的损害,因此,可以对多晶硅进行重掺杂以产生用于存储器矩阵的非常导电的位线互连。 互连线宽度可以非常窄,从而辅助其进一步微小化。 顶部金属化是铝,并且用作存储器矩阵中的字线互连。
摘要:
A label having an identifier 41L is applied to the upper left corner of the key top of each character key in a left hand region of a keyboard device. A label having an identifier 41R is applied to the upper right corner of the key top of each character key in a right hand region. The identifier 41L is a mark of a reversed L shape and the identifier 41R is a mark of a mirror image pattern of the identifier 41L. Further, different colors are applied to the identifiers 41L and 41R depending on regions for individual fingers. As a consequence, the identifiers 41L and 41R have a function to visually display information representing which hand is to be used to press a key and information representing which finger is to be used to press the key. The keyboard device enables a user to naturally understand the arrangement of the keys and the use of the fingers.