公开(公告)号：US08138456B2

公开(公告)日：2012-03-20

申请号：US11742319

申请日：2007-04-30

申请人： Yoshiteru Fukuda ,  Kenichi Shigetomi ,  Shouken Moro

发明人： Yoshiteru Fukuda ,  Kenichi Shigetomi ,  Shouken Moro

IPC分类号： B23K10/00 ,  H05B1/02

CPC分类号： H01L21/67748 ,  H01L21/67005 ,  H01L21/67253 ,  H01L21/6838

摘要： In the present invention, a plurality of suction ports are provided in a heating plate of a heat processing apparatus. The suction ports are provided at a central portion, an intermediate portion, and a peripheral portion of a substrate mounting surface of the heating plate, respectively. The warped state of the substrate before heat-processed is measured, so that when the substrate warps protruding downward, the suction start timing via a suction port corresponding to the outer peripheral portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports, and when the substrate warps protruding upward, the suction start timing via the suction port corresponding to the central portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports. This allows a portion of the substrate bending upward to be sucked first when the substrate is mounted on the heating plate, thereby quickly performing correction of the warpage of the substrate to uniformly heat the substrate.

摘要翻译： 在本发明中，在热处理装置的加热板上设置多个吸入口。 吸入口分别设置在加热板的基板安装面的中央部分，中间部分和周边部分。 测量热处理前的基板的翘曲状态，使得当基板翘曲向下突出时，通过与基板的外周部分相对应的吸入口将吸入开始正时设定为与抽吸相比较早 通过其他吸入口开始定时，并且当基板翘曲向上突出时，通过与基板的中心部分对应的吸入口的吸入开始定时与通过其它吸入口的吸入开始定时相比较早地设定 。 这使得当基板安装在加热板上时，首先将基板的一部分向上弯曲，从而快速地进行基板的翘曲校正以均匀地加热基板。

公开(公告)号：US20070257085A1

公开(公告)日：2007-11-08

申请号：US11742319

申请日：2007-04-30

申请人： Yoshiteru Fukuda ,  Kenichi Shigetomi ,  Shouken Moro

发明人： Yoshiteru Fukuda ,  Kenichi Shigetomi ,  Shouken Moro

IPC分类号： A47J36/02

CPC分类号： H01L21/67748 ,  H01L21/67005 ,  H01L21/67253 ,  H01L21/6838

摘要： In the present invention, a plurality of suction ports are provided in a heating plate of a heat processing apparatus. The suction ports are provided at a central portion, an intermediate portion, and a peripheral portion of a substrate mounting surface of the heating plate, respectively. The warped state of the substrate before heat-processed is measured, so that when the substrate warps protruding downward, the suction start timing via a suction port corresponding to the outer peripheral portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports, and when the substrate warps protruding upward, the suction start timing via the suction port corresponding to the central portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports. This allows a portion of the substrate bending upward to be sucked first when the substrate is mounted on the heating plate, thereby quickly performing correction of the warpage of the substrate to uniformly heat the substrate.

摘要翻译： 在本发明中，在热处理装置的加热板上设置多个吸入口。 吸入口分别设置在加热板的基板安装面的中央部分，中间部分和周边部分。 测量热处理前的基板的翘曲状态，使得当基板翘曲向下突出时，通过与基板的外周部分相对应的吸入口将吸入开始正时设定为与抽吸相比较早 通过其他吸入口开始定时，并且当基板翘曲向上突出时，通过与基板的中心部分相对应的吸入口的吸入开始定时与通过其它吸入口的吸入开始定时相比较早地设定 。 这使得当基板安装在加热板上时，首先将基板的一部分向上弯曲，从而快速地进行基板的翘曲校正以均匀地加热基板。

公开(公告)号：US08378272B2

公开(公告)日：2013-02-19

申请号：US13032677

申请日：2011-02-23

申请人： Kenichi Shigetomi ,  Tsutomu Fukunaga ,  Yasuhiro Uchida

发明人： Kenichi Shigetomi ,  Tsutomu Fukunaga ,  Yasuhiro Uchida

IPC分类号： H05B1/02

CPC分类号： H01L21/67748 ,  H01L21/67109 ,  H01L21/67248

摘要： Disclosed is a heat treatment apparatus for performing a heat treatment on an object to-be-processed by a heater, which can inhibit variation in thermal histories among the objects to-be-processed. The heat treatment apparatus includes, among others, a correction part to correct a power control signal output from an adjusting unit so that a conduction rate of an AC voltage applied to a heater is decreased. Specifically, the correction is performed based on a value obtained by multiplying a first correction value with a second correction value, where the first correction value is generated according to a ratio of the voltage detection value of AC power source to a predetermined reference voltage, and the second correction value is generated according to a ratio of the resistance value of the heater to a predetermined reference resistance value.

摘要翻译： 公开了一种用于对能够抑制待处理对象的热历史变化的加热器进行热处理的热处理装置。 所述热处理装置具有校正部，其对从调整部输出的功率控制信号进行校正，使得施加于加热器的交流电压的导通率降低。 具体地，基于通过将第一校正值与第二校正值相乘而获得的值进行校正，其中根据AC电源的电压检测值与预定参考电压的比率来生成第一校正值，以及 根据加热器的电阻值与预定的参考电阻值的比率产生第二校正值。

公开(公告)号：US20120031894A1

公开(公告)日：2012-02-09

申请号：US13192018

申请日：2011-07-27

申请人： Kenichi Shigetomi

发明人： Kenichi Shigetomi

IPC分类号： H05B1/02

CPC分类号： H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/68764

摘要： Provided is a thermal processing method including a first process comprising changing a set temperature of the heating plate from a first temperature to a second temperature; initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature; obtaining temperature data of the heating plate after the thermal processing is initiated; changing the set temperature of the heating plate from the second temperature when the set temperature reaches the second temperature; and thermal processing of the first substrate using the heating plate for which the set temperature has been changed. The method further includes a second process comprising reinstating the temperature of the heating plate to the second temperature after the thermal processing of the first substrate; and thermal processing of a next substrate using the heating plate while the temperature of the heating plate is maintained at the second temperature.

摘要翻译： 提供一种热处理方法，其包括将加热板的设定温度从第一温度改变为第二温度的第一工序; 在加热板的温度达到第二温度之前对第一基板进行热处理; 在热处理开始之后获得加热板的温度数据; 当设定温度达到第二温度时，将加热板的设定温度从第二温度改变; 以及使用设定温度已经改变的加热板对第一基板进行热处理。 该方法还包括第二工艺，包括在第一衬底的热处理之后将加热板的温度恢复到第二温度; 以及在加热板的温度保持在第二温度的同时使用加热板的下一个基板的热处理。

公开(公告)号：US08916804B2

公开(公告)日：2014-12-23

申请号：US13192018

申请日：2011-07-27

申请人： Kenichi Shigetomi

发明人： Kenichi Shigetomi

IPC分类号： H05B1/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/68764

摘要： Provided is a thermal processing method including a first process comprising changing a set temperature of the heating plate from a first temperature to a second temperature; initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature; obtaining temperature data of the heating plate after the thermal processing is initiated; changing the set temperature of the heating plate from the second temperature when the set temperature reaches the second temperature; and thermal processing of the first substrate using the heating plate for which the set temperature has been changed. The method further includes a second process comprising reinstating the temperature of the heating plate to the second temperature after the thermal processing of the first substrate; and thermal processing of a next substrate using the heating plate while the temperature of the heating plate is maintained at the second temperature.

摘要翻译： 提供一种热处理方法，其包括将加热板的设定温度从第一温度改变为第二温度的第一工序; 在加热板的温度达到第二温度之前对第一基板进行热处理; 在热处理开始之后获得加热板的温度数据; 当设定温度达到第二温度时，将加热板的设定温度从第二温度改变; 以及使用设定温度已经改变的加热板对第一基板进行热处理。 该方法还包括第二工艺，包括在第一衬底的热处理之后将加热板的温度恢复到第二温度; 以及在加热板的温度保持在第二温度的同时使用加热板的下一个基板的热处理。

公开(公告)号：US20120031892A1

公开(公告)日：2012-02-09

申请号：US13192635

申请日：2011-07-28

申请人： Kenichi Shigetomi ,  Jun Ookura

发明人： Kenichi Shigetomi ,  Jun Ookura

IPC分类号： H05B3/68

CPC分类号： H05B1/0233 ,  H01L21/67248

摘要： Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.

摘要翻译： 公开了一种包括第一工艺和第二工艺的热处理方法。 第一晶片（初始晶片）W1和第二晶片（下一个晶片）W2（和随后的晶片W）之间的第一过程包括将加热板的设定温度从第一温度改变到低于第一温度的第二温度 ; 以及在所述加热板的温度达到第二温度之前对第一基板进行热处理。 第二工序是在第一基板的第一工序结束后，将加热板的设定温度从第二温度变更为高于第二温度的第三温度; 以及在所述加热板的温度达到第三温度之后，当所述加热板的温度从第三温度变为第二温度时，对第二基板进行热处理。

公开(公告)号：US07049553B2

公开(公告)日：2006-05-23

申请号：US10867744

申请日：2004-06-16

申请人： Kenichi Shigetomi ,  Nobuyuki Sata ,  Toshichika Takei ,  Masatoshi Kaneda

发明人： Kenichi Shigetomi ,  Nobuyuki Sata ,  Toshichika Takei ,  Masatoshi Kaneda

IPC分类号： H05B1/02

CPC分类号： H01L21/67248 ,  H01L21/67103 ,  H01L21/68714

摘要： Immediately after a cold substrate G is placed on a substrate table 3, a large electric power P1 is supplied to a heating element 32 embedded in the substrate table for a time period T1 so that temperature of the substrate table overshoots a target temperature, and thereafter zero or very small electric power P2 is supplied to the heating element for a time period T2 so that the temperature of the substrate table 3 is lowered to the target temperature while temperature of the substrate continues to rise up to the target temperature. When both the temperature of the substrate table and of the substrate reaches approximately to the target temperature after the time period T2 has elapsed, control of the electric power is entrusted to a PID controller.

摘要翻译： 在将冷的基板G放置在基板台3上之后，立即将大的电力P 1供给到嵌入在基板台中的加热元件32的时间段T1，使得基板台的温度超过目标温度， 然后将零或非常小的电力P 2供给到加热元件一段时间T 2，使得基板台3的温度降低到目标温度，同时基板的温度继续上升到目标温度 。 当经过时间段T 2之后，当基板台的温度和基板的温度都达到目标温度时，电力的控制被委托给PID控制器。

公开(公告)号：US5176552A

公开(公告)日：1993-01-05

申请号：US716983

申请日：1991-06-18

申请人： Takeo Kuboyama ,  Kenichi Shigetomi ,  Hideki Noda ,  Yasu Osaka ,  Yuji Osaka

发明人： Takeo Kuboyama ,  Kenichi Shigetomi ,  Hideki Noda ,  Yasu Osaka ,  Yuji Osaka

IPC分类号： B63B22/00 ,  B63B22/16 ,  F03B13/14 ,  F03B13/18 ,  G08B5/00

CPC分类号： F03B13/18 ,  B63B22/166 ,  Y02E10/38

摘要： A luminous float includes a float body, a resistance plate and a light-emitting device, and causes the light-emitting device to emit light by electricity generated by a dynamo through the relative motions of the float body and the resistance plate, which are caused by waves and tidal currents. In a preferred embodiment, a contractible and extensible bellows provided at the bottom of the float body is connected with the resistance plate through a connecting element. Furthermore, one end of a spring is coupled to an inner member of the float body, and the other end of the spring is coupled to the bottom of the bellows through a coupling means.

摘要翻译： 发光浮子包括浮体，电阻板和发光装置，并且通过浮子体和电阻板的相对运动使发光装置通过发电机产生的电发光 由波浪和潮汐流。 在优选实施例中，设置在浮子体底部的可收缩和可延伸的波纹管通过连接元件与电阻板连接。 此外，弹簧的一端联接到浮子体的内部构件，并且弹簧的另一端通过联接装置联接到波纹管的底部。