摘要:
Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.
摘要:
An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要:
An acoustic wave device (5) includes a piezoelectric substrate (6) made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode (7) disposed on the piezoelectric substrate (6) for exciting a major acoustic wave of a wavelength λ, and a protective layer (8) disposed on the piezoelectric substrate (6) to cover the electrode (7). The protective layer (8) has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.
摘要:
A surface acoustic wave resonator includes a piezoelectric substrate, a first surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate, and a second surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate. The first surface acoustic wave resonator and the second surface acoustic wave resonator are apodized and connected in parallel.
摘要:
An acoustic wave device includes a piezoelectric substrate made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode disposed on the piezoelectric substrate for exciting a major acoustic wave of a wavelength λ, and a protective layer disposed on the piezoelectric substrate to cover the electrode. The protective layer has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.
摘要:
A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要:
A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要:
An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要:
A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (10), a first surface acoustic wave resonator (20) having a comb electrode (11) provided on the piezoelectric substrate (10), and a second surface acoustic wave resonator (30) having a comb electrode (12) provided on the piezoelectric substrate (10). The first surface acoustic wave resonator (20) and the second surface acoustic wave resonator (30) are apodized and connected in parallel.
摘要:
An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.