公开(公告)号：US20100142579A1

公开(公告)日：2010-06-10

申请号：US12499069

申请日：2009-07-07

Applicant: Young Ahn LEEM ,  Jung-Ho SONG ,  Kisoo KIM ,  Gyungock KIM

Inventor： Young Ahn LEEM ,  Jung-Ho SONG ,  Kisoo KIM ,  Gyungock KIM

IPC: H01S3/08 ,  H01S5/00

CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

公开(公告)号：US20120051386A1

公开(公告)日：2012-03-01

申请号：US13022985

申请日：2011-02-08

Applicant: Namje KIM ,  Kyung Hyun PARK ,  Young Ahn LEEM ,  Chul-Wook LEE ,  Sang-Pil HAN ,  Dong-Hun LEE ,  Min Yong JEON

Inventor： Namje KIM ,  Kyung Hyun PARK ,  Young Ahn LEEM ,  Chul-Wook LEE ,  Sang-Pil HAN ,  Dong-Hun LEE ,  Min Yong JEON

IPC: H01S3/08

CPC classification number: H01S5/06258 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1096 ,  H01S5/1215 ,  H01S5/2222

Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

Abstract translation: 提供了一种双模式半导体激光器和使用该双模半导体激光器的太赫兹波装置。 双模式半导体激光器包括分布反馈激光器结构部分，其包括在衬底上的第一衍射光栅和在衬底上包括第二衍射光栅的分布式布拉格反射器激光器结构部分。 由分布式反馈激光器结构部分振荡的第一波长和由分布布拉格反射器激光器结构部分振荡的第二波长彼此不同，分布反馈激光器结构部分和分布式布拉格反射器激光器结构部分共享相同的增益介质 与彼此。

公开(公告)号：US20120147907A1

公开(公告)日：2012-06-14

申请号：US13225609

申请日：2011-09-06

Applicant: Namje KIM ,  Kyung Hyun PARK ,  Young Ahn LEEM ,  Hyunsung KO ,  Sang-Pil HAN ,  Chul-Wook LEE ,  Dong-Hun LEE

Inventor： Namje KIM ,  Kyung Hyun PARK ,  Young Ahn LEEM ,  Hyunsung KO ,  Sang-Pil HAN ,  Chul-Wook LEE ,  Dong-Hun LEE

IPC: H01S3/30

CPC classification number: H01S5/06258 ,  G02F1/3534 ,  G02F2/002 ,  G02F2203/13 ,  H01S5/026 ,  H01S5/1092 ,  H01S5/1215 ,  H01S5/1237 ,  H01S5/4087

Abstract: Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.

Abstract translation: 公开了一种太赫兹波发生器，其包括双模式半导体激光器装置，其被配置为产生具有不同波长的至少两个激光并且击发所产生的激光; 以及形成在与双模半导体激光器件相同的芯片上的光混合器，并且当由拍子激光激发时产生连续的太赫兹波。

公开(公告)号：US20130266263A1

公开(公告)日：2013-10-10

申请号：US13618353

申请日：2012-09-14

Applicant: Oh Kee KWON ,  Chul-Wook LEE ,  Dong-Hun LEE ,  Young Ahn LEEM ,  Young-Tak HAN ,  Yongsoon BAEK ,  Yun C. CHUNG

Inventor： Oh Kee KWON ,  Chul-Wook LEE ,  Dong-Hun LEE ,  Young Ahn LEEM ,  Young-Tak HAN ,  Yongsoon BAEK ,  Yun C. CHUNG

IPC: G02B6/26 ,  H01P11/00

CPC classification number: G02B6/1228 ,  G02B6/305

Abstract: Provided are a spot size converter and a method of manufacturing the spot size converter. The method includes stacking a lower clad layer, a core layer, and a first upper clad layer on a substrate, tapering the first upper clad layer and the core layer in a first direction on a side of the substrate, forming a waveguide layer on the first upper clad layer and the lower clad layer, and etching the waveguide layer, the first upper clad layer, the core layer, and the lower clad layer such that the waveguide layer is wider than a tapered portion of the core layer on the side of the substrate and has the same width as that of the core layer on another side of the substrate.

Abstract translation: 提供了点尺寸转换器和制造光斑尺寸转换器的方法。 该方法包括在基板上层叠下包层，芯层和第一上包覆层，使第一上包覆层和芯层在衬底侧沿第一方向逐渐变细，在衬底的一侧上形成波导层 第一上包覆层和下包层，并且蚀刻波导层，第一上包层，芯层和下包层，使得波导层比芯层的锥形部分宽 并且具有与基板的另一侧上的芯层的宽度相同的宽度。

公开(公告)号：US20130148675A1

公开(公告)日：2013-06-13

申请号：US13614748

申请日：2012-09-13

Applicant: Young Ahn LEEM

Inventor： Young Ahn LEEM

IPC: H01S3/10 ,  H01S3/08

CPC classification number: H01S5/06258 ,  H01S5/06256 ,  H01S5/0657 ,  H01S5/1221

Abstract: A high-efficiency laser diode is provided. Since a λ/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive concept, a region capable of controlling spatial hole burning is inserted into a semiconductor laser diode structure. Thus, an ultrahigh-speed pulse laser diode having a repetition rate in the band ranging from 100 GHz to 300 GHz is obtained. In addition, a single-mode laser diode with improved energy use efficiency is implemented by changing the configuration of a laser diode.

Abstract translation: 提供高效率的激光二极管。 由于λ/ 4相移分布反馈（DFB）激光二极管具有很大的耦合系数，当谐振器的耦合系数乘以等于或大于2时，由于空间空穴燃烧，模式稳定性差。 将本发明的概念，能够控制空穴燃烧的区域插入到半导体激光二极管结构中。 因此，获得了在100GHz至300GHz范围内具有重复频率的超高速脉冲激光二极管。 此外，通过改变激光二极管的配置来实现具有改善的能量利用效率的单模激光二极管。