公开(公告)号：US20080266704A1

公开(公告)日：2008-10-30

申请号：US12108679

申请日：2008-04-24

申请人： Young Shin Kim ,  Hae Jung Lee ,  Chang-Hwan Lee

发明人： Young Shin Kim ,  Hae Jung Lee ,  Chang-Hwan Lee

IPC分类号： G11B21/02

CPC分类号： G11B5/6064 ,  G11B5/607

摘要： A method of controlling a flying height of a magnetic head of a hard disk drive includes calculating a corrected flying on demand (FOD) voltage to correct a difference between a measured flying height measured by applying a burn-in FOD voltage corresponding to a target flying height and a burn-in flying height in a reference FOD voltage profile corresponding to the burn-in FOD voltage, using the reference FOD voltage profile, in the reference FOD voltage profile that is a profile of a second signal for calculating the flying height of the magnetic head with respect to a first signal for calculating an FOD voltage that allows an end of the magnetic head to thermally expand and protrude when applied to a heater included in the magnetic head, and applying an applied FOD voltage obtained by applying the corrected FOD voltage, to the burn-in FOD voltage, to control the flying height of the magnetic head. Thus, the reliability in the read/write operation can be improved and performance of the hard disk drive can be improved.

摘要翻译： 一种控制硬盘驱动器的磁头的飞行高度的方法包括计算校正的飞行点数（FOD）电压，以校正通过应用与目标飞行相对应的老化FOD电压测量的测量飞行高度之间的差异 在参考FOD电压分布中使用参考FOD电压分布，该参考FOD电压曲线是用于计算飞行高度的第二个信号的曲线，该参考FOD电压曲线对应于老化FOD电压的参考FOD电压曲线中的高度和老化飞行高度 所述磁头相对于用于计算FOD电压的第一信号，所述第一信号允许当施加到包括在所述磁头中的加热器时磁头的端部热膨胀和突出，以及施加通过应用校正的FOD而获得的施加的FOD电压 电压，到老化的FOD电压，以控制磁头的飞行高度。 因此，可以提高读/写操作的可靠性，并且可以提高硬盘驱动器的性能。

公开(公告)号：US08139308B2

公开(公告)日：2012-03-20

申请号：US12108679

申请日：2008-04-24

申请人： Young-Shin Kim ,  Hae Jung Lee ,  Chang-Hwan Lee

发明人： Young-Shin Kim ,  Hae Jung Lee ,  Chang-Hwan Lee

IPC分类号： G11B21/02

CPC分类号： G11B5/6064 ,  G11B5/607

摘要： A method of controlling a flying height of a magnetic head of a hard disk drive includes calculating a corrected flying on demand (FOD) voltage to correct a difference between a measured flying height measured by applying a burn-in FOD voltage corresponding to a target flying height and a burn-in flying height in a reference FOD voltage profile corresponding to the burn-in FOD voltage, using the reference FOD voltage profile, in the reference FOD voltage profile that is a profile of a second signal for calculating the flying height of the magnetic head with respect to a first signal for calculating an FOD voltage that allows an end of the magnetic head to thermally expand and protrude when applied to a heater included in the magnetic head, and applying an applied FOD voltage obtained by applying the corrected FOD voltage, to the burn-in FOD voltage, to control the flying height of the magnetic head. Thus, the reliability in the read/write operation can be improved and performance of the hard disk drive can be improved.

摘要翻译： 一种控制硬盘驱动器的磁头的飞行高度的方法包括计算校正的飞行点数（FOD）电压，以校正通过应用与目标飞行相对应的老化FOD电压测量的测量飞行高度之间的差异 在参考FOD电压分布中使用参考FOD电压分布，该参考FOD电压曲线是用于计算飞行高度的第二个信号的曲线，该参考FOD电压曲线对应于老化FOD电压的参考FOD电压曲线中的高度和老化飞行高度 所述磁头相对于用于计算FOD电压的第一信号，所述第一信号允许当施加到包括在所述磁头中的加热器时磁头的端部热膨胀和突出，以及施加通过应用校正的FOD而获得的施加的FOD电压 电压，到老化的FOD电压，以控制磁头的飞行高度。 因此，可以提高读/写操作的可靠性，并且可以提高硬盘驱动器的性能。

公开(公告)号：US07957086B2

公开(公告)日：2011-06-07

申请号：US12031943

申请日：2008-02-15

申请人： Chang-Hwan Lee ,  Hae Jung Lee

发明人： Chang-Hwan Lee ,  Hae Jung Lee

IPC分类号： G11B5/02

CPC分类号： G11B5/6064 ,  G11B5/607

摘要： A method of controlling a flying height of a magnetic head of a hard disk drive apparatus includes producing a reference FOD (flying on demand) voltage profile defining a relationship between the flying height of the magnetic head and an FOD voltage at a measured temperature, wherein an end of the magnetic head thermally expands and protrudes when the FOD voltage is applied to a heater included in the magnetic head and setting the reference FOD voltage profile that is corrected using a reference maximum flying height of the magnetic head that is preset at room temperature, as an applied FOD voltage profile to control the flying height of the magnetic head.

摘要翻译： 一种控制硬盘驱动装置的磁头的飞行高度的方法包括产生定义磁头的飞行高度与测量温度下的FOD电压之间关系的参考FOD（随需飞行）电压分布，其中 当将FOD电压施加到包括在磁头中的加热器时，磁头的端部热膨胀并突出，并且使用预设在室温下的磁头的参考最大飞行高度来设置校正的参考FOD电压分布 作为应用的FOD电压分布来控制磁头的飞行高度。

公开(公告)号：US20080198497A1

公开(公告)日：2008-08-21

申请号：US12031943

申请日：2008-02-15

申请人： Chang-Hwan Lee ,  Hae Jung Lee

发明人： Chang-Hwan Lee ,  Hae Jung Lee

IPC分类号： G11B5/02

CPC分类号： G11B5/6064 ,  G11B5/607

摘要： A method of controlling a flying height of a magnetic head of a hard disk drive apparatus includes producing a reference FOD (flying on demand) voltage profile defining a relationship between the flying height of the magnetic head and an FOD voltage at a measured temperature, wherein an end of the magnetic head thermally expands and protrudes when the FOD voltage is applied to a heater included in the magnetic head and setting the reference FOD voltage profile that is corrected using a reference maximum flying height of the magnetic head that is preset at room temperature, as an applied FOD voltage profile to control the flying height of the magnetic head.

摘要翻译： 一种控制硬盘驱动装置的磁头的飞行高度的方法包括产生定义磁头的飞行高度与测量温度下的FOD电压之间关系的参考FOD（随需飞行）电压分布，其中 当将FOD电压施加到包括在磁头中的加热器时，磁头的端部热膨胀并突出，并且使用预设在室温下的磁头的参考最大飞行高度来设置校正的参考FOD电压分布 作为应用的FOD电压分布来控制磁头的飞行高度。

公开(公告)号：US08238054B2

公开(公告)日：2012-08-07

申请号：US12783682

申请日：2010-05-20

申请人： Tae Young Kim ,  Chang-Hwan Lee

发明人： Tae Young Kim ,  Chang-Hwan Lee

IPC分类号： G11B33/14

CPC分类号： G11B33/1453 ,  G11B33/1486

摘要： A hard disk drive effectively removes internal humidity therefrom and thus improves the reliance and performance of the hard disk drive in high and increased humidity environments.

摘要翻译： 硬盘驱动器有效地从其中消除内部湿度，从而提高硬盘驱动器在高和增加的湿度环境中的依赖性和性能。

公开(公告)号：US07154790B2

公开(公告)日：2006-12-26

申请号：US11001343

申请日：2004-12-01

申请人： Sang-Jib Han ,  Chang-Hwan Lee

发明人： Sang-Jib Han ,  Chang-Hwan Lee

IPC分类号： G11C5/14

CPC分类号： G11C29/12 ,  G11C5/04 ,  G11C16/04 ,  G11C29/12005 ,  G11C29/50 ,  G11C29/50004 ,  G11C2029/1202 ,  H01L2924/0002 ,  H01L2924/00

摘要： Integrated circuit devices are provided including first and second chips and a common input/output pad electrically coupled to the first and second chips. At least one of the first and second chips includes a high voltage generator configured to receive an input voltage through the common input/output pad and generate a test voltage responsive to a test mode signal during a test mode of operation. The test voltage is higher than the input voltage. Related methods of operating integrated circuit devices and semiconductor devices are also provided.

公开(公告)号：US08997253B2

公开(公告)日：2015-03-31

申请号：US13126645

申请日：2009-11-03

申请人： Oh-Hyun Kwon ,  Hyun-Jong Kim ,  Chang-Hwan Lee

发明人： Oh-Hyun Kwon ,  Hyun-Jong Kim ,  Chang-Hwan Lee

IPC分类号： G06F7/04 ,  G06F21/54 ,  G06F21/10

CPC分类号： G06F21/54 ,  G06F21/10 ,  G06F2221/2119

摘要： Disclosed is a method and system of preventing browser-based abuse. The method of preventing browser-based abuse may include determining whether an access based on a browser function extension module is a malicious access for acquiring data of an Internet browser, and blocking the access based on the browser function extension module when the access is determined to be a malicious access.

摘要翻译： 公开了一种防止基于浏览器的滥用的方法和系统。 防止基于浏览器的滥用的方法可以包括确定基于浏览器功能扩展模块的访问是否是用于获取因特网浏览器的数据的恶意访问，以及当访问被确定为基于浏览器功能扩展模块时，阻止访问 成为恶意访问。

公开(公告)号：US20100296191A1

公开(公告)日：2010-11-25

申请号：US12783682

申请日：2010-05-20

申请人： Tae Young KIM ,  Chang-Hwan Lee

发明人： Tae Young KIM ,  Chang-Hwan Lee

IPC分类号： G11B33/14

CPC分类号： G11B33/1453 ,  G11B33/1486

摘要： A hard disk drive effectively removes internal humidity therefrom and thus improves the reliance and performance of the hard disk drive in high and increased humidity environments.

摘要翻译： 硬盘驱动器有效地从其中消除内部湿度，从而提高硬盘驱动器在高和增加的湿度环境中的依赖性和性能。

公开(公告)号：US20080064282A1

公开(公告)日：2008-03-13

申请号：US11979885

申请日：2007-11-09

申请人： Je-An Yu ,  Chang-Hwan Lee

发明人： Je-An Yu ,  Chang-Hwan Lee

IPC分类号： D03D15/00

CPC分类号： D01F6/60 ,  B60R2021/23504 ,  D03D1/02 ,  Y10T428/1362 ,  Y10T428/2913 ,  Y10T428/2915 ,  Y10T442/30

摘要： A high strength polyamide fiber consisting of polyamide monofilaments each having a fineness of less than 4 denier and a stress-strain curve where (a) the monofilament elongates less than 5% when subjected to an initial stress of 1.0 g/d, (b) it elongates less than 12% when subjected to a middle stress of 4.5 g/d, and (c) it elongates more than 3% over a tensile strength range from a tensile strength of at least 9.0 d/g to the tensile strength at break of the monofilament, the elongation values being measured at ambient temperature.

摘要翻译： （a）当初始应力为1.0g / d时，单丝伸长率小于5％的应力 - 应变曲线，（b）由聚酰胺单丝组成的高强度聚酰胺纤维，其细度小于4旦尼尔， 当受到4.5g / d的中等应力时，其伸长率小于12％，（c）其拉伸强度范围从拉伸强度至少为9.0d / g延伸至断裂拉伸强度的3％以上 的单丝，伸长值是在环境温度下测量的。

公开(公告)号：US6165840A

公开(公告)日：2000-12-26

申请号：US300815

申请日：1999-04-27

申请人： Chang-Won Choi ,  Chang-Hwan Lee ,  Chul Jung ,  Min-Seok Han

发明人： Chang-Won Choi ,  Chang-Hwan Lee ,  Chul Jung ,  Min-Seok Han

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L21/76895 ,  H01L28/60 ,  H01L28/82

摘要： Disclosed is an improved method for fabricating a DRAM cell capacitor which can prevent over-etching of polysilicon storage node. The method includes the steps of etching a first insulating layer on a semiconductor substrate to form a storage contact hole, filling the storage contact hole with a first conductive material to form a storage contact plug, forming a second insulating layer over the first insulating layer including the storage contact plug, forming a mask over the second insulating layer to define a storage node region, using the mask and etching the second and first insulating layers to form an opening therein to an upper surface of the storage contact plug, and filling the opening with a second conductive material to form a storage node.

摘要翻译： 公开了一种用于制造可以防止多晶硅存储节点的过度蚀刻的DRAM单元电容器的改进方法。 该方法包括以下步骤：蚀刻半导体衬底上的第一绝缘层以形成存储接触孔，用第一导电材料填充存储接触孔以形成存储接触插塞，在第一绝缘层上形成第二绝缘层，包括 所述存储接触插塞在所述第二绝缘层上形成掩模以限定存储节点区域，使用所述掩模并蚀刻所述第二绝缘层和所述第一绝缘层以在所述存储接触插塞的上表面形成开口，并填充所述开口 具有第二导电材料以形成存储节点。