摘要:
Manufacturing of a charge trap type memory device can include forming a tunnel insulating layer on a substrate. A charge-trapping layer can be formed on the tunnel insulating layer. A blocking layer can be formed on the charge-trapping layer. Gate electrodes can be formed on the blocking layer and divided by a trench. A portion of the charge-trapping layer aligned with the trench may be converted into a charge-blocking pattern with a vertical side profile by an anisotropic oxidation process.
摘要:
A method of forming a vapor thin film is provided, which includes loading a substrate into a chamber, adsorbing a source gas on the substrate by supplying the source gas into the chamber, and forming the thin film on the substrate by supplying a reaction gas into the chamber, wherein the forming of the thin film on the substrate is proceeded under an electric field formed in one direction on the substrate by applying a bias to the substrate.
摘要:
Manufacturing of a charge trap type memory device can include forming a tunnel insulating layer on a substrate. A charge-trapping layer can be formed on the tunnel insulating layer. A blocking layer can be formed on the charge-trapping layer. Gate electrodes can be formed on the blocking layer and divided by a trench. A portion of the charge-trapping layer aligned with the trench may be converted into a charge-blocking pattern with a vertical side profile by an anisotropic oxidation process.
摘要:
A mask pattern is formed on a semiconductor substrate in which a cell region, a PMOS region, and an NMOS region are defined. Trenches are formed in the cell region, the PMOS region, and the NMOS region. A sidewall oxide layer and a protection layer are formed in the trenches, and a portion of the protection layer in the PMOS region is removed. A first device isolation insulating layer is formed on the substrate, filling the trenches. Portions of the first device isolation insulating layer are removed to expose the mask pattern and the trenches of the cell region and the NMOS region and to leave a portion of the first device isolation insulating layer in the trench in the PMOS region. A liner is formed on the portion of the first device isolation region in the trench in the PMOS region and conforming to sidewalls of the trenches in the cell region and the NMOS region. A second device isolation insulating layer is formed on the substrate, filling the trenches in the cell region and the NMOS region. Portions of the second device isolation insulating layer are removed to expose the mask pattern and to leave portions of the second device isolation insulating layer in the trenches of the cell region and the NMOS region.
摘要:
A method of forming an oxide layer on a trench, a method of forming a semiconductor device, and a semiconductor device, the method of forming an oxide layer on a trench including forming a first trench in a first portion of a substrate and a second trench in a second portion of the substrate, the first portion being different from the second portion, performing a plasma doping process on at least one of the first portion and the second portion to implant an impurity therein, and performing an oxidation process to form an oxide layer on the substrate, a thickness of the oxide layer being determined by the impurity implanted in the substrate.