公开(公告)号：US06379568B1

公开(公告)日：2002-04-30

申请号：US09570958

申请日：2000-05-15

申请人： Young-Joon Baik ,  Joo-Yong Lee ,  Dong-Ryul Jeon

发明人： Young-Joon Baik ,  Joo-Yong Lee ,  Dong-Ryul Jeon

IPC分类号： H01J1900

CPC分类号： H01J9/025 ,  H01J2201/30457

摘要： A diamond field emitter and a fabrication method thereof, in which a pretreatment is performed on a surface of an Si substrate in order that diamond nuclei are uniformly formed on the Si substrate during a diamond deposition, an oxide film such as an SiO2 film is deposited on the pretreated surface of the Si substrate and removed after an etching process so that diamond powder can be selectively remained during the etching process, thus the effect of the surface pretreatment of the Si substrate remains in the selected portion during the etching process, and it is also possible to uniformly deposit the diamond in said portion. According to the present invention, the diamond field emitter having excellent and uniform field emission characteristic can be manufactured because the field emission is easily achieved at a tip shaped field emission section, and, moreover, the diamond placed on an upper end portion of the tip increases electron emission effect.

摘要翻译： 一种金刚石场发射器及其制造方法，其中在金刚石沉积中在Si衬底的表面上进行预处理以使金刚石核均匀地形成在Si衬底上，沉积诸如SiO 2膜的氧化物膜 在Si衬底的预处理表面上，并且在蚀刻工艺之后去除，使得在蚀刻工艺期间可以选择性地保留金刚石粉末，因此在蚀刻工艺期间，Si衬底的表面预处理的效果保留在所选择的部分中，并且 也可以将金刚石均匀地沉积在所述部分中。 根据本发明，可以制造具有优异均匀的场发射特性的金刚石场发射器，因为在尖端形状的场致发射部分容易实现场致发射，此外，金刚石放置在尖端的上端部 增加电子发射效应。

公开(公告)号：US5476693A

公开(公告)日：1995-12-19

申请号：US348110

申请日：1994-11-25

申请人： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Y. Eun

发明人： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Y. Eun

IPC分类号： C23C16/27 ,  B05D3/06 ,  C23C16/26

CPC分类号： C23C16/272 ,  Y10T428/30

摘要： There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.

摘要翻译： 公开了一种在衬底上沉积金刚石膜的方法，其在辉光弧过渡区域利用高密度直流辉光放电，以在反应器中在阴极和阳极之间形成等离子体，其中阴极保持其温度在一定范围内 为2100〜2300℃，并且由多个相互平行排列的U形长丝组成，形成阵列，并且各自通过弯曲导线制成。

公开(公告)号：US08334027B2

公开(公告)日：2012-12-18

申请号：US11833679

申请日：2007-08-03

申请人： Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

发明人： Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

IPC分类号： H05H1/24

CPC分类号： C23C16/503 ,  C23C16/272 ,  Y10T428/268

摘要： In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

摘要翻译： 在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室， 从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行 分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。

公开(公告)号：US20080280135A1

公开(公告)日：2008-11-13

申请号：US11833679

申请日：2007-08-03

申请人： Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

发明人： Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

IPC分类号： B01J3/06 ,  H05H1/24

CPC分类号： C23C16/503 ,  C23C16/272 ,  Y10T428/268

摘要： Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible. The diamond thin film fabricated by the method is uniform, contains no impurity, and has excellent crystallinity.

摘要翻译： 公开了在没有正极柱的情况下可操作的DC等离子体辅助化学气相沉积（DC PA-CVD）装置，在不存在正极柱的情况下通过DCPA-CVD沉积材料的方法和由其制造的金刚石薄膜 。 在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室， 从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行 分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。 通过该方法制造的金刚石薄膜是均匀的，不含杂质，并具有优异的结晶度。

公开(公告)号：US06907841B2

公开(公告)日：2005-06-21

申请号：US10330932

申请日：2002-12-27

申请人： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang yong Eun

发明人： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang yong Eun

IPC分类号： C01B31/06 ,  C23C16/27 ,  C23C16/44 ,  C23C16/00 ,  C23C16/503

CPC分类号： C23C16/272 ,  C01B32/25

摘要： Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several μm in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of plasmas, and as a result the spherical diamond powders accumulated have been obtained on circumferences of the normal substrate. With a modification of a substrate structure, a large area accumulation of the diamond powders of around 100 mm in diameter has been accomplished.

摘要翻译： 公开了一种使用传统CVD沉积金刚石薄膜来合成尺寸在几十nm至几μm之间的直径的粉末型金刚石的装置和方法。 在等离子体的边界处已经引起气相成核，结果是在正常的底物的圆周上已经获得积聚的球形金刚石粉末。 通过改变基底结构，已经实现了直径约100mm的金刚石粉末的大面积积累。

公开(公告)号：US5916005A

公开(公告)日：1999-06-29

申请号：US791872

申请日：1997-01-31

申请人： Young-Joon Baik ,  Kwang Yong Eun

发明人： Young-Joon Baik ,  Kwang Yong Eun

IPC分类号： H01J17/49 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J2201/30457

摘要： A high curvature diamond field emitter tip fabrication method includes forming on a substrate a diamond film composed of square (100) phase-oriented facets and (111) phase-oriented facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, and etching the diamond film using a oxygen-containing gas plasma. Further, the method includes forming on a substrate a diamond film composed of square (100) facets and (111) facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, forming a supporting film on the diamond film, removing the substrate therefrom, and etching the diamond film using an oxygen-containing gas plasma after any one of the previously described steps.

摘要翻译： 高曲率金刚石场发射极尖端制造方法包括在基底上形成金刚石膜，该金刚石膜由正方形（100）定向面和（111）分布在其周围的相位取向面形成，并且在下面形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 （100）和（111）金刚石生长面，并使用含氧气体等离子体蚀刻金刚石膜。 此外，该方法包括在基底上形成金刚石膜，该金刚石膜由方形（100）面和分布在其周围的（111）面形成，并且在（100）和（111）金刚石生长面之下形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 在金刚石膜上形成支撑膜，从其上除去基板，并且在前述步骤中的任何一个之后使用含氧气体等离子体蚀刻金刚石膜。

公开(公告)号：US5700518A

公开(公告)日：1997-12-23

申请号：US712707

申请日：1996-09-12

申请人： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Yong Eun

发明人： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Yong Eun

IPC分类号： C23C16/02 ,  C23C16/27 ,  C25F3/02 ,  C23C16/26 ,  B05D3/10

CPC分类号： C23C16/0227 ,  C23C16/27 ,  C25F3/02 ,  Y10T407/27

摘要： A fabrication method for a diamond-coated cemented carbide cutting tool includes electrolytically etching the surface of a cemented carbide cutting tool with a NaOH or KOH aqueous solution or chemically etching the surface of the cemented carbide cutting tool with a KMnO.sub.4 +KOH aqueous solution, and depositing a diamond film on the cemented carbide cutting tool. A stronger etching effect than by using a Murakami solution can be achieved, and no poisonous material is included in the etchant. In addition, disposal of the waste etchant is made simpler, and the adhesion between the diamond film coating and the cemented carbide cutting tool can be strengthened.

摘要翻译： 金刚石涂层硬质合金切削工具的制造方法包括用NaOH或KOH水溶液电解蚀刻硬质合金切削工具的表面，或用KMnO 4 + KOH水溶液化学蚀刻硬质合金刀具的表面，以及 在硬质合金切削工具上沉积金刚石膜。 可以实现比通过使用村上解决方案更强的蚀刻效果，并且蚀刻剂中不包含有毒材料。 此外，使废弃蚀刻剂的处理变得更简单，并且可以加强金刚石膜涂层和硬质合金切削工具之间的粘附。

公开(公告)号：US5647964A

公开(公告)日：1997-07-15

申请号：US458761

申请日：1995-06-02

申请人： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang Yong Eun

发明人： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang Yong Eun

IPC分类号： C23C16/27 ,  C23C16/503 ,  H01J37/32 ,  C23C14/00

CPC分类号： C23C16/272 ,  C23C16/503 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/3244 ,  H01J37/32724

摘要： An improved diamond film synthesizing apparatus and a method thereof using a direct current glow discharge plasma enhanced chemical vapor deposition advantageously providing a plurality of cathodes for forming a relatively large plasma size, which includes a reactor having an upper wall and a bottom wall; a plurality of spaced apart cathode holders half inserted into the upper wall of the reactor, arranged in a triangle when looking dowawardly over the head of the reactor; a plurality of cathode connecting rods, each of which is threadly connected to the cathode holders inside the reactor, respectively; a plurality of cathodes, each of which is threadly connected to the cathode connecting rods, respectively; an anode half inserted into the bottom wall of the reactor and having a substrate attached on the top thereof, whereby all the cathodes and the anodes are spaced apart inside the reactor by a predetermined distance; and a gas supplier connected to one side wall of the reactor having a circular gas supplying tube having a plurality of holes for injecting gas into the reactor. In addition, the diamond film synthesizing method using a direct current glow discharge plasma enhanced chemical vapor deposition comprises the methods of cutting off the heat transfer from a cathode to a cathode holder, thereby maintaining the temperature of a cathode to be within a predetermined range for a stable production of a plasma.

摘要翻译： 改进的金刚石膜合成装置及其使用直流辉光放电等离子体增强化学气相沉积的方法有利地提供用于形成较大等离子体尺寸的多个阴极，其包括具有上壁和底壁的反应器; 多个间隔开的阴极保持器，一半插入反应器的上壁，当在反应堆的头部上倾斜时布置成三角形; 多个阴极连接杆，分别与反应器内部的阴极保持器螺纹连接; 多个阴极，每个阴极分别与阴极连接杆螺纹连接; 阳极半部插入反应器的底壁并且具有附接在其顶部上的基板，由此所有阴极和阳极在反应器内部隔开预定距离; 连接到反应器的一个侧壁的气体供应器具有环形气体供给管，该圆形气体供给管具有用于将气体注入反应器的多个孔。 此外，使用直流辉光放电等离子体增强化学气相沉积的金刚石膜合成方法包括切断从阴极到阴极保持器的热传递的方法，从而将阴极的温度保持在预定范围内 稳定地生产等离子体。