公开(公告)号：US5768046A

公开(公告)日：1998-06-16

申请号：US820163

申请日：1997-03-19

Applicant: Kwang-Ryeol Lee ,  Kwang-Yong Eun ,  Keun-Mo Kim

Inventor： Kwang-Ryeol Lee ,  Kwang-Yong Eun ,  Keun-Mo Kim

IPC: G11B5/53 ,  B81C99/00 ,  C23C16/26 ,  C23C16/27 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  G11B15/18 ,  G11B15/61 ,  G11B15/62 ,  G11B23/50 ,  G11B5/40 ,  C23C16/00

CPC classification number: C23C16/509 ,  C23C16/26 ,  C23C16/458 ,  C23C16/5093 ,  G11B15/61 ,  G11B15/1808 ,  G11B15/62 ,  G11B23/502

Abstract: A head drum is coated with double films, each having different characteristics, by forming a first diamond-like hard carbon film of high degree of hardness and then forming a second diamond-like hard carbon film of a lower degree of hardness thereon. The degree of hardness of the second film is lower than that of the first film. The double coating is performed by means of a synthesizing apparatus which comprises a reactor consisting of a power supply electrode, a workpiece support and an annular ground electrode spaced from the stacked head drums by a predetermined distance.

Abstract translation: 通过形成高硬度的第一金刚石状硬质碳膜，然后形成硬度较低的第二类金刚石状硬质碳膜，头鼓通过双层膜涂覆，每层具有不同的特性。 第二膜的硬度低于第一膜的硬度。 双层涂层通过合成装置进行，该合成装置包括由电源电极，工件支撑件和与叠置的磁头鼓隔开预定距离的环形接地电极组成的电抗器。

公开(公告)号：US06907841B2

公开(公告)日：2005-06-21

申请号：US10330932

申请日：2002-12-27

Applicant: Jae-Kap Lee ,  Young-Joon Baik ,  Kwang yong Eun

Inventor： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang yong Eun

IPC: C01B31/06 ,  C23C16/27 ,  C23C16/44 ,  C23C16/00 ,  C23C16/503

CPC classification number: C23C16/272 ,  C01B32/25

Abstract: Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several μm in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of plasmas, and as a result the spherical diamond powders accumulated have been obtained on circumferences of the normal substrate. With a modification of a substrate structure, a large area accumulation of the diamond powders of around 100 mm in diameter has been accomplished.

Abstract translation: 公开了一种使用传统CVD沉积金刚石薄膜来合成尺寸在几十nm至几μm之间的直径的粉末型金刚石的装置和方法。 在等离子体的边界处已经引起气相成核，结果是在正常的底物的圆周上已经获得积聚的球形金刚石粉末。 通过改变基底结构，已经实现了直径约100mm的金刚石粉末的大面积积累。

公开(公告)号：US5916005A

公开(公告)日：1999-06-29

申请号：US791872

申请日：1997-01-31

Applicant: Young-Joon Baik ,  Kwang Yong Eun

Inventor： Young-Joon Baik ,  Kwang Yong Eun

IPC: H01J17/49 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30457

Abstract: A high curvature diamond field emitter tip fabrication method includes forming on a substrate a diamond film composed of square (100) phase-oriented facets and (111) phase-oriented facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, and etching the diamond film using a oxygen-containing gas plasma. Further, the method includes forming on a substrate a diamond film composed of square (100) facets and (111) facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, forming a supporting film on the diamond film, removing the substrate therefrom, and etching the diamond film using an oxygen-containing gas plasma after any one of the previously described steps.

Abstract translation: 高曲率金刚石场发射极尖端制造方法包括在基底上形成金刚石膜，该金刚石膜由正方形（100）定向面和（111）分布在其周围的相位取向面形成，并且在下面形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 （100）和（111）金刚石生长面，并使用含氧气体等离子体蚀刻金刚石膜。 此外，该方法包括在基底上形成金刚石膜，该金刚石膜由方形（100）面和分布在其周围的（111）面形成，并且在（100）和（111）金刚石生长面之下形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 在金刚石膜上形成支撑膜，从其上除去基板，并且在前述步骤中的任何一个之后使用含氧气体等离子体蚀刻金刚石膜。

公开(公告)号：US5700518A

公开(公告)日：1997-12-23

申请号：US712707

申请日：1996-09-12

Applicant: Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Yong Eun

Inventor： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Yong Eun

IPC: C23C16/02 ,  C23C16/27 ,  C25F3/02 ,  C23C16/26 ,  B05D3/10

CPC classification number: C23C16/0227 ,  C23C16/27 ,  C25F3/02 ,  Y10T407/27

Abstract: A fabrication method for a diamond-coated cemented carbide cutting tool includes electrolytically etching the surface of a cemented carbide cutting tool with a NaOH or KOH aqueous solution or chemically etching the surface of the cemented carbide cutting tool with a KMnO.sub.4 +KOH aqueous solution, and depositing a diamond film on the cemented carbide cutting tool. A stronger etching effect than by using a Murakami solution can be achieved, and no poisonous material is included in the etchant. In addition, disposal of the waste etchant is made simpler, and the adhesion between the diamond film coating and the cemented carbide cutting tool can be strengthened.

Abstract translation: 金刚石涂层硬质合金切削工具的制造方法包括用NaOH或KOH水溶液电解蚀刻硬质合金切削工具的表面，或用KMnO 4 + KOH水溶液化学蚀刻硬质合金刀具的表面，以及 在硬质合金切削工具上沉积金刚石膜。 可以实现比通过使用村上解决方案更强的蚀刻效果，并且蚀刻剂中不包含有毒材料。 此外，使废弃蚀刻剂的处理变得更简单，并且可以加强金刚石膜涂层和硬质合金切削工具之间的粘附。

公开(公告)号：US5695565A

公开(公告)日：1997-12-09

申请号：US503208

申请日：1995-07-17

Applicant: Kwang-Ryeol Lee ,  Kwang-Yong Eun ,  Keun-Mo Kim

Inventor： Kwang-Ryeol Lee ,  Kwang-Yong Eun ,  Keun-Mo Kim

IPC: G11B5/53 ,  B81C99/00 ,  C23C16/26 ,  C23C16/27 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  G11B15/18 ,  G11B15/61 ,  G11B15/62 ,  G11B23/50 ,  C23C16/00

CPC classification number: C23C16/509 ,  C23C16/26 ,  C23C16/458 ,  C23C16/5093 ,  G11B15/61 ,  G11B15/1808 ,  G11B15/62 ,  G11B23/502

Abstract: A head drum is coated with double films, each having different characteristics, by forming a first diamond-like hard carbon film of high degree of hardness and then forming a second diamond-like hard carbon film of a lower degree of hardness thereon. The degree of hardness of the second film is lower than that of the first film. The double coating is performed by means of a synthesizing apparatus which comprises a reactor consisting of a power supply electrode, a workpiece support and an annular ground electrode spaced from the stacked head drums by a predetermined distance.

Abstract translation: 通过形成高硬度的第一金刚石状硬质碳膜，然后形成硬度较低的第二类金刚石状硬质碳膜，头鼓通过双层膜涂覆，每层具有不同的特性。 第二膜的硬度低于第一膜的硬度。 双层涂层通过合成装置进行，该合成装置包括由电源电极，工件支撑件和与叠置的磁头鼓隔开预定距离的环形接地电极组成的电抗器。

公开(公告)号：US5647964A

公开(公告)日：1997-07-15

申请号：US458761

申请日：1995-06-02

Applicant: Jae-Kap Lee ,  Young-Joon Baik ,  Kwang Yong Eun

Inventor： Jae-Kap Lee ,  Young-Joon Baik ,  Kwang Yong Eun

IPC: C23C16/27 ,  C23C16/503 ,  H01J37/32 ,  C23C14/00

CPC classification number: C23C16/272 ,  C23C16/503 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/3244 ,  H01J37/32724

Abstract: An improved diamond film synthesizing apparatus and a method thereof using a direct current glow discharge plasma enhanced chemical vapor deposition advantageously providing a plurality of cathodes for forming a relatively large plasma size, which includes a reactor having an upper wall and a bottom wall; a plurality of spaced apart cathode holders half inserted into the upper wall of the reactor, arranged in a triangle when looking dowawardly over the head of the reactor; a plurality of cathode connecting rods, each of which is threadly connected to the cathode holders inside the reactor, respectively; a plurality of cathodes, each of which is threadly connected to the cathode connecting rods, respectively; an anode half inserted into the bottom wall of the reactor and having a substrate attached on the top thereof, whereby all the cathodes and the anodes are spaced apart inside the reactor by a predetermined distance; and a gas supplier connected to one side wall of the reactor having a circular gas supplying tube having a plurality of holes for injecting gas into the reactor. In addition, the diamond film synthesizing method using a direct current glow discharge plasma enhanced chemical vapor deposition comprises the methods of cutting off the heat transfer from a cathode to a cathode holder, thereby maintaining the temperature of a cathode to be within a predetermined range for a stable production of a plasma.

Abstract translation: 改进的金刚石膜合成装置及其使用直流辉光放电等离子体增强化学气相沉积的方法有利地提供用于形成较大等离子体尺寸的多个阴极，其包括具有上壁和底壁的反应器; 多个间隔开的阴极保持器，一半插入反应器的上壁，当在反应堆的头部上倾斜时布置成三角形; 多个阴极连接杆，分别与反应器内部的阴极保持器螺纹连接; 多个阴极，每个阴极分别与阴极连接杆螺纹连接; 阳极半部插入反应器的底壁并且具有附接在其顶部上的基板，由此所有阴极和阳极在反应器内部隔开预定距离; 连接到反应器的一个侧壁的气体供应器具有环形气体供给管，该圆形气体供给管具有用于将气体注入反应器的多个孔。 此外，使用直流辉光放电等离子体增强化学气相沉积的金刚石膜合成方法包括切断从阴极到阴极保持器的热传递的方法，从而将阴极的温度保持在预定范围内 稳定地生产等离子体。

公开(公告)号：US06399151B2

公开(公告)日：2002-06-04

申请号：US09427897

申请日：1999-10-27

Applicant: Wook-Seong Lee ,  Young Joon Baik ,  Kwang Yong Eun

Inventor： Wook-Seong Lee ,  Young Joon Baik ,  Kwang Yong Eun

IPC: C23C1627

CPC classification number: H01J37/32027 ,  H01J37/32009 ,  H01J37/32541

Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

公开(公告)号：US06365230B1

公开(公告)日：2002-04-02

申请号：US09459026

申请日：1999-12-10

Applicant: Young Joon Baik ,  Wook-Seong Lee ,  Kwang Yong Eun ,  Ki Woong Chae

Inventor： Young Joon Baik ,  Wook-Seong Lee ,  Kwang Yong Eun ,  Ki Woong Chae

IPC: C23C1627

CPC classification number: C23C14/044 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/27 ,  Y10T428/30

Abstract: In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.

Abstract translation: 为了提供优异的韧性和足够的粘合力，对基材和Co中的其它碳化物的含量和硬质合金颗粒的尺寸没有任何限制，本发明提供了一种金刚石薄膜涂覆的切削工具，其包括 在硬质合金基体上形成硬质合金颗粒的表面层异常生长，在表面层上形成的金刚石膜，以及金刚石薄膜涂层切削工具的制造方法，其特征在于，包括以下步骤： 在脱碳气氛下直到表面变为η相，在渗碳气氛下对表面脱碳硬质合金基体进行热处理，在硬质合金基体的渗碳表面上沉积金刚石膜。

公开(公告)号：US06319439B1

公开(公告)日：2001-11-20

申请号：US09513319

申请日：2000-02-25

Applicant: Jae-Kap Lee ,  Young Joon Baik ,  Kwang Yong Eun

Inventor： Jae-Kap Lee ,  Young Joon Baik ,  Kwang Yong Eun

IPC: C30B2500

CPC classification number: C23C16/272 ,  C23C16/27 ,  C30B25/105 ,  C30B29/04

Abstract: A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.

Abstract translation: 公开了一种合成均匀自立金刚石膜而没有生长裂纹的方法。 金刚石膜的固有拉伸应力通过人造压缩应力补偿，同时降低沉积期间沉积温度的控制。 在沉积温度下以预定厚度沉积金刚石膜之后，在沉积期间沉积温度以多个步骤降低。 通过使用具有比钼更高的弹性模量的钨基材，使金刚石晶片的弯曲最小化。

公开(公告)号：US5883769A

公开(公告)日：1999-03-16

申请号：US885584

申请日：1997-06-30

Applicant: Kye-Chul Choi ,  Keum-Mo Kim ,  Kwang-Yong Eun ,  Kwang-Ryeol Lee

Inventor： Kye-Chul Choi ,  Keum-Mo Kim ,  Kwang-Yong Eun ,  Kwang-Ryeol Lee

IPC: C23C16/26 ,  G11B5/53 ,  G11B15/61 ,  G11B15/62 ,  G11B15/60

CPC classification number: G11B15/61 ,  C23C16/26 ,  G11B5/53 ,  G11B15/62

Abstract: An aluminum head drum for use in a video cassette recorder is coated with a protective layer comprising diamond-like carbon. The protective layer of diamond-like carbon is obtained using a plasma-enhanced chemical vapor deposition method and has a thickness ranging from 0.3 .mu.m to 2.0 .mu.m. The protective layer has a varying mechanical hardness, wherein the mechanical hardness has a maximum value at a region of the protective layer coming in contact with the aluminum head drum, decreases smoothly and continuously and reaches an minimum value at a region of the protective layer coming in contact with atmosphere. Micro-Vicker's hardness of the region of the protective layers coming in contact with a video tape is 1.5-2.0 times that of the magnetic substance constituting the video tape.

Abstract translation: 在盒式磁带录像机中使用的铝头鼓涂覆有包含类金刚石碳的保护层。 使用等离子体增强化学气相沉积法获得类金刚石碳的保护层，其厚度范围为0.3μm至2.0μm。 保护层具有变化的机械硬度，其中机械硬度在与铝头鼓接触的保护层的区域具有最大值，平滑且连续地减小，并在保护层到来的区域达到最小值 与大气接触。 与录像带接触的保护层的区域的微维氏硬度是构成录像带的磁性物质的1.5-2.0倍。