公开(公告)号：US06271069B1

公开(公告)日：2001-08-07

申请号：US09122558

申请日：1998-07-24

申请人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

发明人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

IPC分类号： H01L2976

CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.

摘要翻译： 公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1） 。 该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。 在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。 该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。 该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零 选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

公开(公告)号：US5962883A

公开(公告)日：1999-10-05

申请号：US93557

申请日：1998-06-08

申请人： Minghwei Hong ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy

发明人： Minghwei Hong ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy

IPC分类号： H01L29/73 ,  C23C14/08 ,  H01L21/28 ,  H01L21/331 ,  H01L21/463 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/205 ,  H01L29/51 ,  H01L29/737 ,  H01L29/78 ,  H01L31/04 ,  H01L33/44 ,  H01S5/028 ,  H01L29/76

CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L33/44 ,  H01S5/028

摘要： Disclosed are articles that comprise an oxide layer on a GaAs-based semiconductor body, with metal layers on the oxide and the body facilitating application of an electric field across the oxide layer. The interface between the oxide and the semiconductor body is of device quality. Contrary to teachings of the prior art, the oxide is not essentially pure Ga.sub.2 O.sub.3, but instead has composition Ga.sub.x A.sub.y O.sub.z, where A is an electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state. Furthermore, x.gtoreq.0, z is selected to satisfy the requirement that both Ga and A is substantially fully oxidized and y/(x+y) is greater than 0.1. Stabilizer element A typically is selected from Sc, Y, the rare earth elements and the alkaline earth elements. Articles according to the invention exemplarily comprise a planar enchancement mode MOS-FET with inversion channel. A method of making articles as described above is also disclosed.

摘要翻译： 公开了在GaAs基半导体主体上包含氧化物层的物品，氧化物和物体上的金属层有助于在氧化物层上施加电场。 氧化物和半导体本体之间的界面具有器件质量。 与现有技术的教导相反，氧化物基本上不是纯的Ga 2 O 3，而是具有组合物GaxAyOz，其中A是适于稳定3+氧化态的Ga的正电性稳定剂元件。 此外，选择x> / = 0，z以满足Ga和A基本上完全氧化并且y /（x + y）大于0.1的要求。 稳定元件A通常选自Sc，Y，稀土元素和碱土元素。 根据本发明的制品示例性地包括具有反转通道的平面激励模式MOS-FET。 还公开了如上所述制造制品的方法。

公开(公告)号：US4035555A

公开(公告)日：1977-07-12

申请号：US682837

申请日：1976-05-04

申请人： Donald Winslow Murphy ,  Forrest Allen Trumbore

发明人： Donald Winslow Murphy ,  Forrest Allen Trumbore

IPC分类号： H01M4/58 ,  H01M10/36

CPC分类号： H01M10/05 ,  H01M4/581

摘要： Nonaqueous, rechargeable batteries are described which employ a conventional negative electrode and a positive electrode with a new and unique active material. Such batteries are advantageous because of the high capacity per unit weight and per unit volume exhibited by the positive electrode and the extensive rechargeability of these batteries.

摘要翻译： 描述了使用具有新的和独特的活性材料的常规负极和正极的非水可再充电电池。 这种电池是有利的，因为每单位重量的高容量和正极所显示的每单位体积以及这些电池的充电性。

公开(公告)号：US06603241B1

公开(公告)日：2003-08-05

申请号：US09576807

申请日：2000-05-23

申请人： Bradley Paul Barber ,  Harold Alexis Huggins ,  Ronald Eugene Miller ,  Donald Winslow Murphy ,  Yiu-Huen Wong

发明人： Bradley Paul Barber ,  Harold Alexis Huggins ,  Ronald Eugene Miller ,  Donald Winslow Murphy ,  Yiu-Huen Wong

IPC分类号： H03H925

CPC分类号： H03H9/175

摘要： A reflector stack or acoustic mirror arrangement for an acoustic device is described which may attain the highest possible impedance mismatch between alternating higher and lower impedance reflecting layers of the stack, so as to maximize bandwidth. The arrangement may also reduce manufacturing costs by requiring fewer layers for the device, as compared to conventional acoustic mirrors. The thinner reflecting stack is accordingly fabricated in reduced time to lower cost, by incorporating materials providing a larger acoustic impedance mismatch than those currently obtainable. The bandwidth of the resulting acoustic resonator device may be widened, particularly when a low density material such as aerogel, CVD SiO2 and/or sputter deposited SiO2 is applied as topmost layer in the reflector stack/acoustic mirror arrangement of the device.

摘要翻译： 描述了用于声学装置的反射器叠层或声镜装置，其可以在堆叠的交替的较高和较低阻抗反射层之间达到最高可能的阻抗失配，从而最大化带宽。 与传统的声反射镜相比，该装置还可以通过要求较少的器件层来降低制造成本。 因此，通过结合提供比目前可获得的更大的声阻抗失配的材料，减少了较薄的反射叠层，从而降低了成本。 特别是当诸如气凝胶，CVD SiO 2和/或溅射沉积的SiO 2之类的低密度材料作为装置的反射器叠层/声镜装置中的最顶层被施加时，所得到的声共振器装置的带宽可能变宽。

公开(公告)号：US5698497A

公开(公告)日：1997-12-16

申请号：US258900

申请日：1994-06-13

申请人： Robert Cort Haddon ,  Arthur Foster Hebard ,  Donald Winslow Murphy ,  Matthew Jonathan Rosseinsky

发明人： Robert Cort Haddon ,  Arthur Foster Hebard ,  Donald Winslow Murphy ,  Matthew Jonathan Rosseinsky

IPC分类号： C01B31/02 ,  H01L39/12 ,  C01B31/00 ,  H01B12/02 ,  H01L39/24

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/0206 ,  C01B31/0213 ,  H01L39/123 ,  Y10S423/39 ,  Y10S423/40 ,  Y10S505/70 ,  Y10S505/825 ,  Y10S505/884 ,  Y10S505/887

摘要： Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.

摘要翻译： 已经开发了基于富勒烯分子的碳质材料，其允许超导性。 富勒烯材料可溶于普通溶剂。