摘要:
An operating method of a non-volatile memory device having a string including a plurality of memory cells and a plurality of auxiliary cells, the plurality of memory cells and the plurality of auxiliary cells being connected in series, includes detecting a threshold voltage of at least one of the plurality of auxiliary cells and generating an output signal corresponding to a deterioration level of the plurality of memory cells, based on the threshold voltage.
摘要:
In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.
摘要:
A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.