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    Semiconductor memory device having power-saving effect
    1.
    发明授权
    Semiconductor memory device having power-saving effect 有权
    具有省电效果的半导体存储器件

    公开(公告)号：US08254201B2

    公开(公告)日：2012-08-28

    申请号：US12797791

    申请日：2010-06-10

    申请人： Young-Soo Sohn ,  Kwang-Il Park ,  Kyoung-Ho Kim ,  Seung-Jun Bae

    发明人： Young-Soo Sohn ,  Kwang-Il Park ,  Kyoung-Ho Kim ,  Seung-Jun Bae

    IPC分类号： G11C8/18 ,  G11C7/10

    CPC分类号： G11C7/22 ,  G11C7/1078 ,  G11C7/1084 ,  G11C8/18 ,  G11C2207/2227 ,  G11C2207/2272

    摘要： A semiconductor memory device includes a memory cell array, a controller, and a data input/output (I/O) unit. The memory cell array includes a plurality of memory cells and is configured to store data. The controller is configured to enable a write clock signal in response to an active command when a write latency of the semiconductor device is less than a reference write latency and disable the write clock signal during a disabling period in which read data is output from the semiconductor device. The data I/O unit is configured to receive data in response to the write clock signal and output the data to the memory cell array.

    摘要翻译： 半导体存储器件包括存储单元阵列，控制器和数据输入/输出（I / O）单元。 存储单元阵列包括多个存储单元，并被配置为存储数据。 当半导体器件的写入延迟小于参考写入延迟并且在从半导体输出读取数据的禁用期间禁止写入时钟信号时，控制器被配置为响应于有效命令来使能写入时钟信号 设备。 数据I / O单元被配置为响应于写时钟信号接收数据并将数据输出到存储单元阵列。

    Semiconductor memory device and method of controlling the same
    2.
    发明授权
    Semiconductor memory device and method of controlling the same 有权
    半导体存储器件及其控制方法

    公开(公告)号：US08649238B2

    公开(公告)日：2014-02-11

    申请号：US13078218

    申请日：2011-04-01

    申请人： Dong-Min Kim ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    发明人： Dong-Min Kim ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    IPC分类号： G11C8/00

    CPC分类号： G11C8/12 ,  G11C8/18

    摘要： A semiconductor memory device includes a memory cell array, an address control unit and a logic circuit. The memory cell array includes a plurality of banks which are divided into a first bank block and a second bank block. The address control unit accesses the memory cell array. The logic circuit controls the address control unit based on a command and an address signal such that the first and second bank blocks commonly operate in a first operation mode, and the first and second bank blocks individually operate in a second operation mode.

    摘要翻译： 半导体存储器件包括存储单元阵列，地址控制单元和逻辑电路。 存储单元阵列包括被划分成第一存储块和第二存储块的多个存储体。 地址控制单元访问存储单元阵列。 逻辑电路基于命令和地址信号控制地址控制单元，使得第一和第二存储体块以第一操作模式共同操作，并且第一和第二存储体块以第二操作模式分别操作。

    Data write training method
    3.
    发明授权
    Data write training method 有权
    数据写入训练方法

    公开(公告)号：US08593901B2

    公开(公告)日：2013-11-26

    申请号：US13868425

    申请日：2013-04-23

    申请人： Tae-Young Oh ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    发明人： Tae-Young Oh ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    IPC分类号： G11C8/00

    CPC分类号： G11C7/22 ,  G11C7/1087 ,  G11C7/1093 ,  G11C2207/2254

    摘要： Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command.

    摘要翻译： 实施例可以涉及一种操作半导体器件的方法，所述方法包括接收第一写入训练命令，响应于通过第一数据线的第一写入训练命令接收第一写入数据，以及通过第二数据线发送第一写入数据 数据线。 在不附加训练命令的情况下执行发送第一写入数据。

    MEMORY SYSTEM AND METHOD
    6.
    发明申请
    MEMORY SYSTEM AND METHOD 审中-公开
    记忆系统和方法

    公开(公告)号：US20110246857A1

    公开(公告)日：2011-10-06

    申请号：US13078364

    申请日：2011-04-01

    申请人： Seung-Jun Bae ,  Kwang-Il Park ,  Young-Soo Sohn ,  Young-Hyun Jun ,  Joo-Sun Choi ,  Tae-Young Oh

    发明人： Seung-Jun Bae ,  Kwang-Il Park ,  Young-Soo Sohn ,  Young-Hyun Jun ,  Joo-Sun Choi ,  Tae-Young Oh

    IPC分类号： H03M13/09 ,  H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1004 ,  H03M13/09

    摘要： A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel.

    摘要翻译： 存储器系统包括存储器控制器和存储器件。 存储器件通过第一通道与存储器控制器交换数据，通过与存储器控制器的第二通道交换与数据相关联的第一循环冗余校验（CRC）代码，并且接收包括相关联的第二CRC码的命令/地址分组 具有来自存储器控制器的命令/地址通过第三通道。

    Integrated circuit memory devices having internal command generators therein that support extended command sets using independent and dependent commands
    7.
    发明授权
    Integrated circuit memory devices having internal command generators therein that support extended command sets using independent and dependent commands 有权
    其中具有内部命令发生器的集成电路存储器件支持使用独立和相关命令的扩展命令集

    公开(公告)号：US07817494B2

    公开(公告)日：2010-10-19

    申请号：US12236978

    申请日：2008-09-24

    申请人： Young-soo Sohn ,  Kwang-Il Park ,  Seung-Jun Bae

    发明人： Young-soo Sohn ,  Kwang-Il Park ,  Seung-Jun Bae

    IPC分类号： G11C11/00

    CPC分类号： G11C11/4076 ,  G11C7/1006 ,  G11C7/1072 ,  G11C7/22 ,  G11C8/18

    摘要： Integrated circuit memory devices include an internal command generator and a memory control circuit responsive to an internal command generated by the internal command generator. The internal command generator is configured to generate an internal command in response to a combination of an independent command and at least one dependent command received in sequence by the memory device. For example, the internal command generator may be configured to require the independent command to follow the at least one dependent command in the sequence when generating the internal command from the combination of the independent and dependent commands. Alternatively, the internal command generator may be configured to require the independent command to precede the at least one dependent command in the sequence before generating the internal command from the combination of the independent and dependent commands. These independent and dependent commands may be received by the memory device as respective multi-bit external command signals.

    摘要翻译： 集成电路存储器件包括响应于由内部命令发生器产生的内部命令的内部命令发生器和存储器控制电路。 内部命令生成器被配置为响应于独立命令和由存储器装置依次接收的至少一个依赖命令的组合来生成内部命令。 例如，内部命令生成器可以被配置为在从独立命令和从属命令的组合生成内部命令时，要求独立命令遵循序列中的至少一个从属命令。 或者，内部命令生成器可以被配置为在从独立命令和从属命令的组合生成内部命令之前，要求独立命令在序列中的至少一个从属命令之前。 这些独立和依赖的命令可以被存储器装置接收为相应的多位外部命令信号。

    Data write training method and semiconductor device performing the same
    8.
    发明授权
    Data write training method and semiconductor device performing the same 有权
    数据写入训练方法和执行相同的半导体器件

    公开(公告)号：US08437216B2

    公开(公告)日：2013-05-07

    申请号：US13270710

    申请日：2011-10-11

    申请人： Tae-Young Oh ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    发明人： Tae-Young Oh ,  Young-Soo Sohn ,  Seung-Jun Bae ,  Kwang-Il Park

    IPC分类号： G11C8/00

    CPC分类号： G11C7/22 ,  G11C7/1087 ,  G11C7/1093 ,  G11C2207/2254

    摘要： Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command.

    摘要翻译： 实施例可以涉及一种操作半导体器件的方法，所述方法包括接收第一写入训练命令，响应于通过第一数据线的第一写入训练命令接收第一写入数据，以及通过第二数据线发送第一写入数据 数据线。 在不附加训练命令的情况下执行发送第一写入数据。