公开(公告)号：US20120155200A1

公开(公告)日：2012-06-21

申请号：US13299497

申请日：2011-11-18

申请人： Young-Suk Moon ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Sang-Hoon Shin

发明人： Young-Suk Moon ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Sang-Hoon Shin

IPC分类号： G11C8/18 ,  G11C7/12 ,  G11C8/00

CPC分类号： G11C8/12 ,  G06F2213/0038

摘要： A memory system includes a memory device, a control device configured to control the memory device, a first channel configured to transfer a row command from the control device to the memory device, and a second channel configured to transfer a column command from the control device to the memory device.

摘要翻译： 存储器系统包括存储器件，被配置为控制存储器件的控制器件，被配置为将控制器件的行命令传送到存储器件的第一通道以及被配置为从控制器件传送列命令的第二通道 到存储设备。

公开(公告)号：US08110892B2

公开(公告)日：2012-02-07

申请号：US12649452

申请日：2009-12-30

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L23/5258 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/3011

摘要： A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

摘要翻译： 半导体器件包括多个堆叠的半导体芯片; 以及包括第一TSV和冗余TSV的多个穿硅通孔（TSV），并且被配置为共同地将信号传送到多个堆叠的半导体芯片。 半导体芯片中的至少一个包括多个修复熔丝单元，其被配置为存储关于TSV的至少一个缺陷的缺陷信息; 以及分配给各个TSV的多个锁存单元，并被配置为存储指示至少一个TSV缺陷并从多个修复熔丝单元输出的多个信号。

公开(公告)号：US20110001559A1

公开(公告)日：2011-01-06

申请号：US12614672

申请日：2009-11-09

申请人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

发明人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

IPC分类号： H01L25/00

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/3011

摘要： A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

摘要翻译： 半导体器件及其驱动方法可以快速检测半导体芯片通孔的故障，并使用分配给每个贯通半导体芯片通孔的锁存单元有效地修复故障。 半导体器件包括堆叠的多个半导体芯片，以及多个贯穿半导体芯片通孔，以共同地将信号传递到多个半导体芯片，其中每个半导体芯片包括分配给多个半导体芯片的多个锁存单元 通过半导体芯片通孔，并且每个半导体芯片的多个锁存单元构成包括多个通过半导体芯片通孔的边界扫描路径以顺序地传送测试数据。

公开(公告)号：US20120092062A1

公开(公告)日：2012-04-19

申请号：US13338716

申请日：2011-12-28

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01H37/76

CPC分类号： H01L22/22 ,  G01R31/2853 ,  H01L23/481 ,  H01L23/5258 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06596 ,  H01L2924/3011

摘要： A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

摘要翻译： 半导体系统包括控制器; 包括堆叠在所述控制器上的多个层叠半导体芯片的半导体器件以及被配置为共同地将信号传送到所述多个堆叠的半导体芯片的多个穿硅通孔（TSV） 以及缺陷信息传送TSV，被配置为将从半导体芯片中的至少一个依次输出的TSV缺陷信息传送到控制器，其中，所述控制器包括：多个第一修复熔丝单元，被配置为基于所述TSV缺陷信息来设置第一熔丝信息 ; 以及多个第一TSV选择单元，被配置为响应于所述第一熔丝信息选择性地驱动所述TSV。

公开(公告)号：US20110006391A1

公开(公告)日：2011-01-13

申请号：US12649452

申请日：2009-12-30

申请人： Jeong-Woo LEE ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo LEE ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/525 ,  H01L23/535 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L23/5258 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/3011

摘要： A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

摘要翻译： 半导体器件包括多个堆叠的半导体芯片; 以及包括第一TSV和冗余TSV的多个穿硅通孔（TSV），并且被配置为共同地将信号传送到多个堆叠的半导体芯片。 半导体芯片中的至少一个包括多个修复熔丝单元，其被配置为存储关于TSV的至少一个缺陷的缺陷信息; 以及分配给各个TSV的多个锁存单元，并被配置为存储指示至少一个TSV缺陷并从多个修复熔丝单元输出的多个信号。

公开(公告)号：US08698276B2

公开(公告)日：2014-04-15

申请号：US13338716

申请日：2011-12-28

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/52

CPC分类号： H01L22/22 ,  G01R31/2853 ,  H01L23/481 ,  H01L23/5258 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06596 ,  H01L2924/3011

摘要： A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

摘要翻译： 半导体系统包括控制器; 包括堆叠在所述控制器上的多个层叠半导体芯片的半导体器件以及被配置为共同地将信号传送到所述多个堆叠的半导体芯片的多个穿硅通孔（TSV） 以及缺陷信息传送TSV，被配置为将从半导体芯片中的至少一个依次输出的TSV缺陷信息传送到控制器，其中，所述控制器包括：多个第一修复熔丝单元，被配置为基于所述TSV缺陷信息来设置第一熔丝信息 ; 以及多个第一TSV选择单元，被配置为响应于所述第一熔丝信息选择性地驱动所述TSV。

公开(公告)号：US08171358B2

公开(公告)日：2012-05-01

申请号：US12614672

申请日：2009-11-09

申请人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

发明人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

IPC分类号： G01R31/28 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/3011

摘要： A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

摘要翻译： 半导体器件及其驱动方法可以快速检测半导体芯片通孔的故障，并使用分配给每个贯通半导体芯片通孔的锁存单元有效地修复故障。 半导体器件包括堆叠的多个半导体芯片，以及多个贯穿半导体芯片通孔，以共同地将信号传递到多个半导体芯片，其中每个半导体芯片包括分配给多个半导体芯片的多个锁存单元 通过半导体芯片通孔，并且每个半导体芯片的多个锁存单元构成包括多个通过半导体芯片通孔的边界扫描路径以顺序地传送测试数据。

公开(公告)号：US08918685B2

公开(公告)日：2014-12-23

申请号：US13603597

申请日：2012-09-05

申请人： Hyung-Gyun Yang ,  Hyung-Dong Lee ,  Yong-Kee Kwon ,  Young-Suk Moon ,  Hong-Sik Kim

发明人： Hyung-Gyun Yang ,  Hyung-Dong Lee ,  Yong-Kee Kwon ,  Young-Suk Moon ,  Hong-Sik Kim

IPC分类号： G11C29/00

CPC分类号： G11C29/56 ,  G11C2029/5606

摘要： This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.

摘要翻译： 该技术涉及在减小测试电路的尺寸的同时平滑地对具有高存储容量的存储器电路进行测试。 根据本发明的测试电路包括被配置为对目标测试存储器电路进行测试的测试执行单元，被配置为存储用于测试执行单元的数据的内部存储单元，以及转换设置单元， 或作为用于存储测试执行单元的数据的外部存储单元的目标测试存储器电路的整个存储空间。

公开(公告)号：US20110001552A1

公开(公告)日：2011-01-06

申请号：US12615876

申请日：2009-11-10

申请人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jun-Gi Choi

发明人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jun-Gi Choi

IPC分类号： H01H37/76

CPC分类号： H01L23/5256 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device includes a first transmission line and a second transmission line disposed at different layers; a contact fuse coupled with the first transmission line and the second transmission line; a power driver configured to apply an electric stress to the contact fuse; and a fuse state output unit configured to output a fuse state signal having a logic level corresponding to an electric connection state of the contact fuse.

摘要翻译： 半导体器件包括：第一传输线和布置在不同层的第二传输线; 与第一传输线和第二传输线耦合的接触熔丝; 功率驱动器，被配置为向所述接触保险丝施加电应力; 以及熔丝状态输出单元，被配置为输出具有与所述接触熔丝的电连接状态对应的逻辑电平的熔丝状态信号。

公开(公告)号：US07973590B2

公开(公告)日：2011-07-05

申请号：US12615876

申请日：2009-11-10

申请人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jun-Gi Choi

发明人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jun-Gi Choi

IPC分类号： H01H85/00

CPC分类号： H01L23/5256 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device includes a first transmission line and a second transmission line disposed at different layers; a contact fuse coupled with the first transmission line and the second transmission line; a power driver configured to apply an electric stress to the contact fuse; and a fuse state output unit configured to output a fuse state signal having a logic level corresponding to an electric connection state of the contact fuse.

摘要翻译： 半导体器件包括：第一传输线和布置在不同层的第二传输线; 与第一传输线和第二传输线耦合的接触熔丝; 功率驱动器，被配置为向所述接触保险丝施加电应力; 以及熔丝状态输出单元，被配置为输出具有与所述接触熔丝的电连接状态对应的逻辑电平的熔丝状态信号。