公开(公告)号：US08630370B2

公开(公告)日：2014-01-14

申请号：US13122300

申请日：2009-10-07

申请人： Young-Taek Lee ,  Hoon-Tae Kim

发明人： Young-Taek Lee ,  Hoon-Tae Kim

IPC分类号： H03C3/00

CPC分类号： H04B1/0475 ,  H03C2200/0041 ,  H03D7/18 ,  H03D2200/0045 ,  H03F3/3022 ,  H03F2203/30031 ,  H04B2001/0491 ,  H04L27/364

摘要： An apparatus and a method for increasing Error Vector Magnitude (EVM) performance representing quality of transmission signal are provided. The apparatus and the method suppress an image frequency component generated due to mismatch of IQ channels in order to transmit/receive a large amount of data without distortion in 4th generation wireless communication standard candidate technologies such as a Long Term Evolution (LTE) system and a mobile WiMax system. The apparatus includes a LOcal frequency (LO) buffer including an amplifier. The LO buffer controls the gain and the phase of the amplifier using a control bit for controlling resistor connection.

摘要翻译： 提供了一种用于增加表示传输信号质量的误差矢量幅度（EVM）性能的装置和方法。 该装置和方法抑制由于IQ信道不匹配而产生的图像频率分量，以便在诸如长期演进（LTE）系统和第四代无线通信标准候选技术的第四代无线通信标准候选技术中发送/接收大量数据而不失真 移动WiMax系统。 该装置包括包括放大器的LOcal频率（LO）缓冲器。 LO缓冲器使用用于控制电阻连接的控制位来控制放大器的增益和相位。

公开(公告)号：US20120008705A1

公开(公告)日：2012-01-12

申请号：US13122300

申请日：2009-10-07

申请人： Young-Taek Lee ,  Hoon-Tae Kim

发明人： Young-Taek Lee ,  Hoon-Tae Kim

IPC分类号： H04W88/02 ,  H04B15/00

CPC分类号： H04B1/0475 ,  H03C2200/0041 ,  H03D7/18 ,  H03D2200/0045 ,  H03F3/3022 ,  H03F2203/30031 ,  H04B2001/0491 ,  H04L27/364

摘要： An apparatus and a method for increasing Error Vector Magnitude (EVM) performance representing quality of transmission signal are provided. The apparatus and the method suppress an image frequency component generated due to mismatch of IQ channels in order to transmit/receive a large amount of data without distortion in 4th generation wireless communication standard candidate technologies such as a Long Term Evolution (LTE) system and a mobile WiMax system. The apparatus includes a LOcal frequency (LO) buffer including an amplifier. The LO buffer controls the gain and the phase of the amplifier using a control bit for controlling resistor connection.

摘要翻译： 提供了一种用于增加表示传输信号质量的误差矢量幅度（EVM）性能的装置和方法。 该装置和方法抑制由于IQ信道不匹配而产生的图像频率分量，以便在诸如长期演进（LTE）系统和第四代无线通信标准候选技术的第四代无线通信标准候选技术中发送/接收大量数据而不失真 移动WiMax系统。 该装置包括包括放大器的LOcal频率（LO）缓冲器。 LO缓冲器使用用于控制电阻连接的控制位来控制放大器的增益和相位。

公开(公告)号：US5262989A

公开(公告)日：1993-11-16

申请号：US760187

申请日：1991-09-16

申请人： Young-Taek Lee ,  Jin-Man Han ,  Kyoung-Ho Kim ,  Hong-Seon Hwang

发明人： Young-Taek Lee ,  Jin-Man Han ,  Kyoung-Ho Kim ,  Hong-Seon Hwang

IPC分类号： G05F3/20 ,  G11C5/14 ,  G11C13/00

CPC分类号： G05F3/205 ,  G11C5/146

摘要： A back-bias level sensor used for a semiconductor device wherein a sensing current for sensing a back-bias voltage is prevented from directly flowing into the substrate (or the back-bias voltage terminal). The gate of a PMOS transistor is provided with the back-bias voltage while the source is provided with a ground voltage, so that a pump circuit performs the pumping operation to increase the back-bias voltage when the back-bias voltage is lower than a predetermined voltage level; otherwise, the pump circuit is de-energized, thereby reducing the back-bias voltage.

摘要翻译： 用于半导体器件的背偏置电平传感器，其中防止用于感测反偏压的感测电流直接流入衬底（或背偏电压端）。 PMOS晶体管的栅极被提供有反向偏置电压，同时源极具有接地电压，使得泵电路进行泵浦操作以在背偏电压低于 预定电压电平; 否则，泵电路被断电，从而减小背偏电压。

公开(公告)号：US08410852B2

公开(公告)日：2013-04-02

申请号：US13180114

申请日：2011-07-11

申请人： Young-Taek Lee ,  Si-Bum Jun ,  Jong-Soo Lee

发明人： Young-Taek Lee ,  Si-Bum Jun ,  Jong-Soo Lee

IPC分类号： H03F3/45

CPC分类号： H03F3/245 ,  H03F3/189 ,  H03F3/195 ,  H03F3/45179 ,  H03F3/45183 ,  H03F2203/45394 ,  H03F2203/45481 ,  H03F2203/45554 ,  H03F2203/45594 ,  H03F2203/45596 ,  H03F2203/45638 ,  H03F2203/45644

摘要： A drive amplifier having improved linearity while being characterized by low current consumption. The drive amplifier includes first and second transistors having a gate to which first and second differential Radio Frequency (RF) voltages are respectively input; a third transistor which has a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, and a drain-source current which increases with an increase in the second differential RF voltage; and a fourth transistor which has a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, and a drain-source current which increases with an increase in the first differential RF voltage.

摘要翻译： 一种驱动放大器，具有改善的线性度，同时具有低电流消耗。 驱动放大器包括第一和第二晶体管，其具有分别输入第一和第二差分射频（RF）电压的栅极; 具有连接到所述第二晶体管的漏极的漏极和连接到所述第一晶体管的栅极的源极的第三晶体管，以及随着所述第二差分RF电压的增加而增加的漏极 - 源极电流; 以及第四晶体管，其具有连接到所述第一晶体管的漏极的漏极和连接到所述第二晶体管的栅极的源极，以及随着所述第一差分RF电压的增加而增加的漏极 - 源极电流。