公开(公告)号：US20080310214A1

公开(公告)日：2008-12-18

申请号：US11764618

申请日：2007-06-18

申请人： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

发明人： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.

摘要翻译： 因此，本公开提供了一种对存储器阵列进行编程的方法。 提供包括磁性元件的至少一个存储单元。 提供耦合到磁性元件的至少一个电流源。 单极电流从多个非零电流电平从至少一个电流源提供给磁性元件。

公开(公告)号：US07688616B2

公开(公告)日：2010-03-30

申请号：US11764618

申请日：2007-06-18

申请人： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

发明人： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.

摘要翻译： 因此，本公开提供了一种对存储器阵列进行编程的方法。 提供包括磁性元件的至少一个存储单元。 提供耦合到磁性元件的至少一个电流源。 单极电流从多个非零电流电平从至少一个电流源提供给磁性元件。

公开(公告)号：US07573736B2

公开(公告)日：2009-08-11

申请号：US11752157

申请日：2007-05-22

申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

公开(公告)号：US07466585B2

公开(公告)日：2008-12-16

申请号：US11380777

申请日：2006-04-28

申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US07312506B2

公开(公告)日：2007-12-25

申请号：US11093652

申请日：2005-03-30

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

IPC分类号： H01L29/82

CPC分类号： G11C11/16

摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US20090290410A1

公开(公告)日：2009-11-26

申请号：US12537093

申请日：2009-08-06

申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

公开(公告)号：US20080291720A1

公开(公告)日：2008-11-27

申请号：US11752157

申请日：2007-05-22

申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC分类号： G11C11/15 ,  H01L21/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面区域。

公开(公告)号：US20080186757A1

公开(公告)日：2008-08-07

申请号：US11743453

申请日：2007-05-02

申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US07719882B2

公开(公告)日：2010-05-18

申请号：US11743453

申请日：2007-05-02

申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US20100118603A1

公开(公告)日：2010-05-13

申请号：US12687608

申请日：2010-01-14

申请人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

发明人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

摘要翻译： 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。