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公开(公告)号：US07466585B2
公开(公告)日：2008-12-16
申请号：US11380777
申请日：2006-04-28
申请人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
发明人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。
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公开(公告)号：US20070253244A1
公开(公告)日：2007-11-01
申请号：US11380777
申请日：2006-04-28
申请人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
发明人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。
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公开(公告)号：US07312506B2
公开(公告)日：2007-12-25
申请号：US11093652
申请日：2005-03-30
申请人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
发明人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
IPC分类号： H01L29/82
CPC分类号： G11C11/16
摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。
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公开(公告)号：US07443638B2
公开(公告)日：2008-10-28
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。
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公开(公告)号：US20060233002A1
公开(公告)日：2006-10-19
申请号：US11093652
申请日：2005-03-30
申请人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Lin
发明人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Lin
IPC分类号： G11C19/08
CPC分类号： G11C11/16
摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。
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公开(公告)号：US20060238925A1
公开(公告)日：2006-10-26
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。
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公开(公告)号：US07573736B2
公开(公告)日：2009-08-11
申请号：US11752157
申请日：2007-05-22
申请人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
发明人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.
摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。
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公开(公告)号：US20080310214A1
公开(公告)日：2008-12-18
申请号：US11764618
申请日：2007-06-18
申请人： Yu-Jen Wang , Hsu-Chen Chang , Denny Tang
发明人： Yu-Jen Wang , Hsu-Chen Chang , Denny Tang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.
摘要翻译： 因此，本公开提供了一种对存储器阵列进行编程的方法。 提供包括磁性元件的至少一个存储单元。 提供耦合到磁性元件的至少一个电流源。 单极电流从多个非零电流电平从至少一个电流源提供给磁性元件。
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公开(公告)号：US20090290410A1
公开(公告)日：2009-11-26
申请号：US12537093
申请日：2009-08-06
申请人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
发明人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.
摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。
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公开(公告)号：US20080291720A1
公开(公告)日：2008-11-27
申请号：US11752157
申请日：2007-05-22
申请人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
发明人： Yu-Jen Wang , Denny Tang , Hsu-Chen Cheng
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.
摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面区域。
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