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    Magnetic random access memory
    1.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US07466585B2

    公开(公告)日：2008-12-16

    申请号：US11380777

    申请日：2006-04-28

    申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

    发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

    摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

    摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

    Magnetic random access memory
    2.
    发明申请
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US20070253244A1

    公开(公告)日：2007-11-01

    申请号：US11380777

    申请日：2006-04-28

    申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

    发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

    摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

    摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

    Memory cell structure
    3.
    发明授权
    Memory cell structure 有权
    存储单元结构

    公开(公告)号：US07312506B2

    公开(公告)日：2007-12-25

    申请号：US11093652

    申请日：2005-03-30

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16

    摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

    摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

    Magnetoresistive structures and fabrication methods
    4.
    发明授权
    Magnetoresistive structures and fabrication methods 有权
    磁阻结构和制造方法

    公开(公告)号：US07443638B2

    公开(公告)日：2008-10-28

    申请号：US10907974

    申请日：2005-04-22

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    IPC分类号： G11B5/39 ,  G11B5/33

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

    摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

    摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

    Memory cell structure
    5.
    发明申请
    Memory cell structure 有权
    存储单元结构

    公开(公告)号：US20060233002A1

    公开(公告)日：2006-10-19

    申请号：US11093652

    申请日：2005-03-30

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

    IPC分类号： G11C19/08

    CPC分类号： G11C11/16

    摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

    摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

    Magnetoresistive Structures and Fabrication Methods
    6.
    发明申请
    Magnetoresistive Structures and Fabrication Methods 有权
    磁阻结构及制作方法

    公开(公告)号：US20060238925A1

    公开(公告)日：2006-10-26

    申请号：US10907974

    申请日：2005-04-22

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

    摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

    摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

    DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE
    7.
    发明申请
    DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE 有权
    域壁辅助转子扭矩传递磁阻随机访问存储器结构

    公开(公告)号：US20120068279A1

    公开(公告)日：2012-03-22

    申请号：US12884351

    申请日：2010-09-17

    申请人： Chih-Huang Lai ,  Sheng-Huang Huang ,  Kuo-Feng Huang ,  Ming-Te Liu ,  Chun-Jung Lin ,  Ya-Chen Kao ,  Wen-Cheng Chen

    发明人： Chih-Huang Lai ,  Sheng-Huang Huang ,  Kuo-Feng Huang ,  Ming-Te Liu ,  Chun-Jung Lin ,  Ya-Chen Kao ,  Wen-Cheng Chen

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228 ,  H01L43/08

    摘要： A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

    摘要翻译： 半导体存储器件包括磁性固定并位于衬底的第一区域内的第一铁磁层; 第二铁磁层近似第一铁磁层; 以及介于所述第一铁磁层与所述第二铁磁层的所述第一部分之间的阻挡层。 第二铁磁层包括无磁性的第一部分，并且位于第一区域内; 第二部分，磁性地固定在第一方向上并且位于所述基板的第二区域内，所述第二区域从所述第一侧面接触所述第一区域; 以及第三部分，其磁性地固定到第二方向并且位于所述基板的第三区域内，所述第三区域从所述第二侧面接触所述第一区域。

    Perpendicular magnetic recording medium
    8.
    发明申请
    Perpendicular magnetic recording medium 失效
    垂直磁记录介质

    公开(公告)号：US20070247756A1

    公开(公告)日：2007-10-25

    申请号：US11590641

    申请日：2006-10-30

    申请人： Chih-Huang Lai ,  David Vokoun ,  Yu-Yi Liao ,  Meng-Shian Lin

    发明人： Chih-Huang Lai ,  David Vokoun ,  Yu-Yi Liao ,  Meng-Shian Lin

    IPC分类号： G11B5/74

    CPC分类号： G11B5/732 ,  G11B5/667 ,  G11B5/7325

    摘要： A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.

    摘要翻译： 垂直磁记录介质包括：基板; 形成在基板上的软磁性膜; 一种非磁性膜，它包括形成在软磁膜上并由选自铽，钆，镝，钽，铪及其组合的金属材料制成的非晶中间层，形成在非晶中间层上的缓冲层， 中心立方结构，以及形成在缓冲层上并具有六方晶体结构的种子层; 以及形成在种子层上的粒状磁记录膜。

    Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system
    9.
    发明授权
    Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system 失效
    具有Fe / FeSi / Fe体系的合成反铁磁钉扎层

    公开(公告)号：US06633464B2

    公开(公告)日：2003-10-14

    申请号：US09209060

    申请日：1998-12-09

    申请人： Chih-Huang Lai ,  Zhupei Shi ,  Hua-Ching Tong ,  Robert E. Rottmayer ,  Charles W. Miller

    发明人： Chih-Huang Lai ,  Zhupei Shi ,  Hua-Ching Tong ,  Robert E. Rottmayer ,  Charles W. Miller

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

    摘要： A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthetic AFM layer has a magnetization substantially in a second direction that is substantially antiparallel to the first direction. The magnetoresistive device can be a spin valve in which a first surface of the synthetic AFM layer is adjacent to a pinning layer, and a second surface of the synthetic AFM layer is adjacent to a spacer layer. Further, the spin valve includes a free layer that overlies the spacer, thereby being separated from the synthetic AFM layer by the spacer. The pinning layer, synthetic AFM layer, spacer, and free layer can be bounded by a first shield and a second shield to provide magnetic shielding of the spin valve sensor.

    摘要翻译： 磁阻（MR）装置包括具有Fe / FeSi / Fe构造的合成反铁磁（AFM）层。 合成AFM层的第一Fe层具有基本上在第一方向上的磁化，而合成AFM层的第二Fe层具有基本上在基本上与第一方向反平行的第二方向上的磁化。 磁阻器件可以是自旋阀，其中合成AFM层的第一表面与钉扎层相邻，并且合成AFM层的第二表面与间隔层相邻。 此外，自旋阀包括覆盖间隔物的自由层，从而通过间隔物与合成AFM层分离。 钉扎层，合成AFM层，隔离层和自由层可以由第一屏蔽层和第二屏蔽层限定，以提供自旋阀传感器的磁屏蔽。

    Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure
    10.
    发明授权
    Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure 有权
    具有反铁磁和静磁耦合钉扎结构的旋转阀传感器

    公开(公告)号：US06185077B2

    公开(公告)日：2001-02-06

    申请号：US09227323

    申请日：1999-01-06

    申请人： Hua-Ching Tong ,  Tai Min ,  Jian-Gang Zhu ,  Chih-Huang Lai

    发明人： Hua-Ching Tong ,  Tai Min ,  Jian-Gang Zhu ,  Chih-Huang Lai

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.

    摘要翻译： 用于磁阻传感器的稳定的钉扎结构包括夹在反铁磁层之间的一对铁磁层，铁磁层具有基本相反的磁方向磁阻耦合并由反铁磁层固定。 铁磁材料的自由层具有可以在施加的磁场的存在下旋转的磁方向，从而可以感测场。 可以提供第二自由层，使得自由层围绕固定结构夹持，传感器被配置用于放大信号并最小化共模噪声。