公开(公告)号：US08628998B2

公开(公告)日：2014-01-14

申请号：US13477897

申请日：2012-05-22

申请人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

发明人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L21/268 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

摘要翻译： 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。

公开(公告)号：US20130171766A1

公开(公告)日：2013-07-04

申请号：US13477897

申请日：2012-05-22

申请人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

发明人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L21/268 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

摘要翻译： 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。

公开(公告)号：US08356311B2

公开(公告)日：2013-01-15

申请号：US13227462

申请日：2011-09-07

申请人： Yu-Sheng Wang ,  Jen-Chen Wu

发明人： Yu-Sheng Wang ,  Jen-Chen Wu

IPC分类号： G11B17/04

CPC分类号： G11B17/056

摘要： A method is disclosed to detect the voltage of a limit switch in an optical disc drive. The method includes following steps: loading an optical disc when the voltage of the limit switch is at a high level, completing the disc loading process when the voltage is changed to a low level, sampling the voltage of the limit switch predetermined times when the voltage is changed to the high level again, detecting the sampling voltages, completing the disc ejecting process when the sampling voltages are all at the high level, and determining a voltage bouncing to maintain the disc loaded status to avoid disc ejection misjudgment of the optical disc drive when the sampling voltages are not all at the high level.

摘要翻译： 公开了一种用于检测光盘驱动器中的限位开关的电压的方法。 该方法包括以下步骤：当限位开关的电压处于高电平时加载光盘，当电压变为低电平时完成盘片加载过程，当电压 再次变为高电平，检测采样电压，当采样电压全部处于高电平时完成光盘弹出处理，并且确定电压反弹以保持盘装载状态，以避免光盘驱动器的盘排出误判 当采样电压不是全部处于高电平时。

公开(公告)号：US08060897B2

公开(公告)日：2011-11-15

申请号：US12239474

申请日：2008-09-26

申请人： Yu-Sheng Wang ,  Jen-Chen Wu

发明人： Yu-Sheng Wang ,  Jen-Chen Wu

IPC分类号： G11B17/04

CPC分类号： G11B17/056

摘要： The invention is to provide a restraining device of an optical disk drive in which a traverse is disposed. A transmission unit rotates a roller to, load/unload a disc, and drives a slider to move the roller. The transmission unit includes the restraining device moving with the roller. When the optical disk drive carries a disc, the slider moves to release the traverse and push down the roller to move the restraining device away from the vibration range of the traverse. When the optical disk drive does not carry a disc, the slider moves to restrain the traverse and release the roller to move the restraining device close to the front end of the traverse. The vibration range of the traverse is restrained to protect the gear teeth from damage.

摘要翻译： 本发明提供一种其中布置有横向的光盘驱动器的限制装置。 传动单元使滚筒旋转，加载/卸载盘，并驱动滑块以移动辊。 传动单元包括与辊一起移动的限制装置。 当光盘驱动器携带光盘时，滑块移动以释放横移，并向下推滚筒以使约束装置远离横动的振动范围。 当光盘驱动器不携带光盘时，滑块移动以限制横移并释放滚轮以将限制装置移动到靠近横移的前端。 横移的振动范围受到限制，以保护齿轮齿免受损坏。

公开(公告)号：US06452201B1

公开(公告)日：2002-09-17

申请号：US09619087

申请日：2000-07-19

申请人： Yu-Sheng Wang ,  Chien-Rong Huang ,  Kuan-Chou Chen ,  Ping-Yu Hu ,  Tzong-Ming Wu

发明人： Yu-Sheng Wang ,  Chien-Rong Huang ,  Kuan-Chou Chen ,  Ping-Yu Hu ,  Tzong-Ming Wu

IPC分类号： G01N2188

CPC分类号： H01L21/67265 ,  Y10S414/136

摘要： This invention uses the pattern-based signal to accelerate the evaluation process as a means to replace complicated computing procedures. This invention is constructed through implementing absolute coordinates to produce pattern-based signals by position and two optical sensor signals, and through conducting the feature extraction process. This process produces feature signals of sidelong and overlapped issues. Furthermore, through transforming signals, feature signals can be handled by the digital data processor. Thus, this invention can achieve the three main objectives of wafer mapping.

摘要翻译： 本发明使用基于模式的信号来加速评估过程，作为替代复杂计算过程的手段。 通过实施绝对坐标来构建本发明，通过位置和两个光学传感器信号产生基于图案的信号，并且通过进行特征提取处理。 该过程产生了侧向和重叠问题的特征信号。 此外，通过转换信号，特征信号可以由数字数据处理器处理。 因此，本发明可以实现晶片映射的三个主要目的。

公开(公告)号：US08748315B2

公开(公告)日：2014-06-10

申请号：US13396870

申请日：2012-02-15

申请人： En-Ting Lee ,  Kun-El Chen ,  Yu-Sheng Wang ,  Chien-Chung Chen ,  Huai-Tei Yang

发明人： En-Ting Lee ,  Kun-El Chen ,  Yu-Sheng Wang ,  Chien-Chung Chen ,  Huai-Tei Yang

IPC分类号： H01L31/02

CPC分类号： H01L31/0352 ,  H01L21/26513 ,  H01L27/1446 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

摘要： The present disclosure relates to a method of forming a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the method comprises forming a plurality of photodetectors within a front-side of a semiconductor substrate. An implant is performed on the back-side of the semiconductor substrate to form an implantation region having a doping concentration that is greater in the center than at the edges of the semiconductor substrate. The back-side of the workpiece is then exposed to an etchant, having an etch rate that is inversely proportional to the doping concentration, which thins the semiconductor substrate to a thickness that allows for light to pass through the back-side of the substrate to the plurality of photodetectors. By implanting the substrate prior to etching, the etching rate is made uniform over the back-side of the substrate improving total thickness variation between the photodetectors and the back-side of the substrate.

摘要翻译： 本公开涉及形成背面照明CMOS图像传感器（BSI CIS）的方法。 在一些实施例中，该方法包括在半导体衬底的正面内形成多个光电探测器。 在半导体衬底的背面进行注入，以形成掺杂浓度在中心比在半导体衬底的边缘处大的掺杂浓度。 工件的背面侧，然后暴露于蚀刻剂，其具有的蚀刻速率成反比的掺杂浓度，其中所述半导体衬底变薄到厚度允许光通过所述基板的背面侧，以 多个光检测器。 通过在蚀刻之前注入基板，使蚀刻速率在基板的背面上均匀，从而提高光电检测器与基板的背面之间的总厚度变化。

公开(公告)号：US08552529B2

公开(公告)日：2013-10-08

申请号：US13488958

申请日：2012-06-05

申请人： Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L21/02

CPC分类号： H01L27/0805 ,  H01L28/60 ,  H01L28/75

摘要： A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.

摘要翻译： 公开了一种半导体器件。 该装置包括基板; 覆盖衬底的第一金属层; 覆盖在第一金属层上的电介质层; 以及覆盖所述电介质层的第二金属层，其中所述第一金属层包括：第一体心立方晶格金属层; 第一底层，位于第一体心立方晶格金属层下面，其中第一底层是体心立方晶格的金属，包括钛（Ti），钨（W），钼（Mo）或铌（Nb）; 以及在第一体心立方晶格金属层和第一底层之间的体心立方晶格的第一界面。

公开(公告)号：US20100077414A1

公开(公告)日：2010-03-25

申请号：US12492687

申请日：2009-06-26

申请人： Yu-Ming Chang ,  Yu-Sheng Wang ,  Jen-Chen Wu

发明人： Yu-Ming Chang ,  Yu-Sheng Wang ,  Jen-Chen Wu

IPC分类号： G11B17/04

CPC分类号： G11B17/0515

摘要： A slot-in type disk drive fastens a clamping unit with two protrusions around its periphery on the central hole of a base plate. A front positioning part utilizes a stick to link a front right positioning bar and a front left positioning bar to synchronously open or close. A locking rod has a limiting pin inserted into an arc slot on the side of the base plate, and protrudes a locking end from the rear end. A rear positioning part utilizes an idle gear to link rear right and rear left positioning bars to synchronously open or close. The locking end can insert a first or second positioning recess on the rear left positioning bar and a touch block of the locking rod leans against the first protrusion. A lever is disposed on the rear right positioning bar to link a linkage plate set by one end.

摘要翻译： 插入式磁盘驱动器在基板的中心孔周围围绕其周边紧固具有两个突起的夹紧单元。 前定位部件利用杆来连接前右定位杆和前左定位杆以同步打开或关闭。 锁定杆具有插入基板侧面的弧形槽中的限制销，并且从后端突出锁定端。 后定位部件利用空转齿轮连接后左右定位杆，以同步打开或关闭。 锁定端可以在后左定位杆上插入第一或第二定位凹槽，并且锁定杆的触摸块抵靠第一突起。 杠杆设置在后右定位杆上，以将连接板组合在一端。

公开(公告)号：US20090077410A1

公开(公告)日：2009-03-19

申请号：US12198075

申请日：2008-08-25

申请人： Bing-Min Lin ,  Chin-Fu Ho ,  Yu-Sheng Wang ,  Yen-Ting Chou

发明人： Bing-Min Lin ,  Chin-Fu Ho ,  Yu-Sheng Wang ,  Yen-Ting Chou

IPC分类号： G06F1/08

CPC分类号： G06F1/08

摘要： A method for setting an actual operation frequency of a memory is provided. The method includes the following steps. First, a memory model list is provided for selecting a memory model. Then, an estimation operation frequency of the memory is obtained according to the selected model. Finally, the operation frequency of a front side bus (FSB) is adjusted and cooperated with a frequency transformation ratio to generate the actual operation frequency of the memory according to the estimation operation frequency.

摘要翻译： 提供了一种用于设置存储器的实际操作频率的方法。 该方法包括以下步骤。 首先，提供用于选择存储器模型的存储器模型列表。 然后，根据所选择的模型获得存储器的估计操作频率。 最后，前端总线（FSB）的工作频率以频率变换比进行调整配合，根据推定运算频率生成存储器的实际工作频率。

公开(公告)号：US20080211106A1

公开(公告)日：2008-09-04

申请号：US11680981

申请日：2007-03-01

申请人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

发明人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/7684

摘要： A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer.

摘要翻译： 形成半导体结构的方法包括在衬底上形成电介质层。 在电介质层上形成第一非导电阻挡层。 通过第一非导电阻挡层和介电层内形成至少一个开口。 在第一非导电阻挡层上并在开口内形成第二非导电阻挡层。 去除第二非导电阻挡层的至少一部分，从而至少部分地暴露第一非导电阻挡层的顶表面和开口的底表面，而第二非导电阻挡层保留在侧壁上 的开幕。 然后形成种子层和导电层，并且单次抛光操作去除种子层和导电层。