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公开(公告)号:US20090130814A1
公开(公告)日:2009-05-21
申请号:US12357661
申请日:2009-01-22
申请人: Yuan-Hung LIU , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chai-Shiung Tsai
发明人: Yuan-Hung LIU , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chai-Shiung Tsai
IPC分类号: H01L21/20
CPC分类号: H01L21/02274 , H01L21/02115 , H01L21/28273 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/3146 , H01L21/76816 , H01L21/7682 , H01L21/76885 , H01L21/76897 , H01L27/115 , H01L27/11521 , H01L27/14632 , H01L27/14687 , H01L28/91 , H01L29/42328 , H01L29/7881
摘要: A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a first etch process to partially expose a top surface of the first dielectric layer. A substantially conformal metal-containing layer is formed over the second dielectric layer and within the opening. The second dielectric layer and a portion of the metal-containing layer are removed. The amorphous carbon layer is removed by an oxygen-containing plasma process to expose a top surface of the first dielectric layer. An insulating layer is formed over the metal-containing layer, and a second metal-containing layer is formed over the insulating layer to form a capacitor.
摘要翻译: 一种方法包括在形成在衬底上的第一电介质层上形成无定形碳层,在非晶碳层上形成第二电介质层; 以及通过第一蚀刻工艺在所述非晶碳层和所述第二介电层内形成开口,以部分地暴露所述第一介电层的顶表面。 在第二电介质层上并在开口内形成基本上共形的含金属层。 去除第二电介质层和一部分含金属层。 通过含氧等离子体工艺除去无定形碳层以暴露第一介电层的顶表面。 在含金属层的上方形成有绝缘层,在绝缘层上形成第二含金属层,形成电容器。