公开(公告)号：US08961646B2

公开(公告)日：2015-02-24

申请号：US13821975

申请日：2011-11-09

申请人： Yuefeng Gu ,  Tadaharu Yokokawa ,  Toshiharu Kobayashi ,  Toshio Osada ,  Junzo Fujioka ,  Hiroshi Harada ,  Daisuke Nagahama ,  Yusuke Kikuchi

发明人： Yuefeng Gu ,  Tadaharu Yokokawa ,  Toshiharu Kobayashi ,  Toshio Osada ,  Junzo Fujioka ,  Hiroshi Harada ,  Daisuke Nagahama ,  Yusuke Kikuchi

IPC分类号： B22F1/00 ,  C22C19/05 ,  C22C1/04 ,  C22C30/00

CPC分类号： C22C30/00 ,  C22C1/0433 ,  C22C19/056 ,  C22C19/057

摘要： There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries.

摘要翻译： 提供了具有优异的蠕变强度以及耐高温氧化性的镍合金。 本发明的镍合金以质量％计含有11.5〜11.9％的Cr，25〜29％的Co，3.4〜3.7％的Mo，1.9〜 2.1％，Ti在3.9〜4.4％的范围内，Al在2.9〜3.2％的范围内，C在0.02〜0.03％的范围，B在0.01〜0.03％的范围，Zr在0.04〜 0.06％，Ta在2.1〜2.2％的范围内，Hf在0.3〜0.4％的范围内，Nb在0.5〜0.8％的范围内，余量为Ni和不可避免的杂质，并含有晶体中析出的碳化物和硼化物 谷物和晶界。

公开(公告)号：US20130167687A1

公开(公告)日：2013-07-04

申请号：US13821975

申请日：2011-11-09

申请人： Yuefeng Gu ,  Tadaharu Yokokawa ,  Toshiharu Kobayashi ,  Toshio Osada ,  Junzo Fujioka ,  Hiroshi Harada ,  Daisuke Nagahama ,  Yusuke Kikuchi

发明人： Yuefeng Gu ,  Tadaharu Yokokawa ,  Toshiharu Kobayashi ,  Toshio Osada ,  Junzo Fujioka ,  Hiroshi Harada ,  Daisuke Nagahama ,  Yusuke Kikuchi

IPC分类号： C22C30/00

CPC分类号： C22C30/00 ,  C22C1/0433 ,  C22C19/056 ,  C22C19/057

摘要： There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries.

摘要翻译： 提供了具有优异的蠕变强度以及耐高温氧化性的镍合金。 本发明的镍合金以质量％计含有11.5〜11.9％的Cr，25〜29％的Co，3.4〜3.7％的Mo，1.9〜 2.1％，Ti在3.9〜4.4％的范围内，Al在2.9〜3.2％的范围内，C在0.02〜0.03％的范围，B在0.01〜0.03％的范围，Zr在0.04〜 0.06％，Ta在2.1〜2.2％的范围内，Hf在0.3〜0.4％的范围内，Nb在0.5〜0.8％的范围内，余量为Ni和不可避免的杂质，并含有晶体中析出的碳化物和硼化物 谷物和晶界。

公开(公告)号：US20090078566A1

公开(公告)日：2009-03-26

申请号：US11917491

申请日：2006-06-01

申请人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

发明人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

IPC分类号： C23C14/34 ,  C23C14/38 ,  C01B33/02 ,  C01B31/36 ,  C01B31/00

CPC分类号： C23C16/515 ,  C23C16/24 ,  C23C16/26 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/45508 ,  C23C16/45578 ,  C23C16/4586 ,  C23C16/503 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08285 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3444

摘要： The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target (10) into a reaction chamber (4), a second step for filling the reaction chamber (10) with a reaction gas and a third step for applying pulse DC voltage between a first conductor (3) and a second conductor (40) spaced from each other in the reaction chamber (10). The present invention further relates to a deposited film forming device for performing the above method. Preferably, in the third step, potential difference between the first conductor (3) and the second conductor (40) is set to not less than 50V and not more than 3000V, and pulse frequency of the pulse DC voltage applied to the first and second conductors (3, 40) is set to not more than 300kHz. Duty ratio of the pulse DC voltage is set to not less than 20% and not more than 90%.

摘要翻译： 本发明涉及形成沉积膜的方法，该沉积膜包括用于将沉积的膜形成靶（10）设置到反应室（4）中的第一步骤，用反应气体填充反应室（10）的第二步骤，以及 在反应室（10）中在第一导体（3）和彼此间隔开的第二导体（40）之间施加脉冲直流电压的第三步骤。 本发明还涉及一种用于执行上述方法的沉积膜形成装置。 优选地，在第三步骤中，将第一导体（3）和第二导体（40）之间的电位差设定为不小于50V且不大于3000V，并且将脉冲直流电压的脉冲频率施加到第一和第二导体 导体（3，40）设置为不超过300kHz。 脉冲直流电压的占空比设定为20％以上且90％以下。

公开(公告)号：US20100014888A1

公开(公告)日：2010-01-21

申请号：US11915717

申请日：2006-05-26

申请人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

发明人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

IPC分类号： G03G15/00 ,  G03G5/04

CPC分类号： G03G5/08221 ,  G03G5/0433 ,  G03G5/08 ,  G03G5/08235 ,  G03G5/08278 ,  G03G5/102 ,  G03G5/14704

摘要： The present invention relates to an electrophotographic photosensitive member 2 including a conductive body 20, a photoconductive layer 22 formed on the conductive body 20 using amorphous silicon, and a surface layer 23 formed on the photoconductive layer using amorphous silicon. The present invention further relates to an image forming apparatus provided with the electrophotographic photosensitive member 2. The photoconductive layer 22 has a mean roughness Ra of not more than 10 nm per 10 μm square. The surface layer 23, without undergoing grinding process, has a mean roughness Ra of not more than 10 nm per 10 μm square.

摘要翻译： 本发明涉及一种电子照相感光构件2，其包括导电体20，使用非晶硅形成在导电体20上的光电导层22以及使用非晶硅形成在光电导层上的表面层23。 本发明还涉及一种设置有电子照相感光构件2的图像形成装置。光电导层22的平均粗糙度Ra每10平方米不超过10nm。 表面层23，不进行研磨处理，其平均粗糙度Ra为10m / m 2的平方。