公开(公告)号：US20050141577A1

公开(公告)日：2005-06-30

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US07579627B2

公开(公告)日：2009-08-25

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/12

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20090236585A1

公开(公告)日：2009-09-24

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US08076165B2

公开(公告)日：2011-12-13

申请号：US11887153

申请日：2006-03-02

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  C23C16/34 ,  C23C16/4481 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

摘要翻译： 本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给 含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

公开(公告)号：US07858992B2

公开(公告)日：2010-12-28

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L29/04 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20090121320A1

公开(公告)日：2009-05-14

申请号：US11887153

申请日：2006-03-02

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

IPC分类号： H01L29/12 ,  H01L21/365

CPC分类号： H01S5/22 ,  B82Y20/00 ,  C23C16/34 ,  C23C16/4481 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

摘要翻译： 本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给 含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

公开(公告)号：US20120049328A1

公开(公告)日：2012-03-01

申请号：US13373102

申请日：2011-11-04

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01S5/22 ,  B82Y20/00 ,  C23C16/34 ,  C23C16/4481 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems encountered in the art.

摘要翻译： 本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给 含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了本领域遇到的问题。

公开(公告)号：US07462882B2

公开(公告)日：2008-12-09

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20060202188A1

公开(公告)日：2006-09-14

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/109 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

公开(公告)号：US06455877B1

公开(公告)日：2002-09-24

申请号：US09657875

申请日：2000-09-08

申请人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

发明人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.

摘要翻译： 提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。 具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。 衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。 基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。