利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

171 条记录 (耗时 0.038 秒)

    Semiconductor device having a capacitor structure including a self-alignment deposition preventing film
    4.
    发明授权
    Semiconductor device having a capacitor structure including a self-alignment deposition preventing film 有权
    具有包括自对准防沉积膜的电容器结构的半导体器件

    公开(公告)号：US06483143B2

    公开(公告)日：2002-11-19

    申请号：US09810401

    申请日：2001-03-19

    申请人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

    发明人： Yuichi Matsui ,  Masahiko Hiratani ,  Yasuhiro Shimamoto ,  Yoshitaka Nakamura ,  Toshihide Nabatame

    IPC分类号： H01L27108

    CPC分类号： H01L28/60 ,  H01L21/28562 ,  H01L27/10814

    摘要： In a semiconductor device including a plurality of memory cells, a deposition preventing film is formed on an interlayer insulating film in which a plurality of holes are formed, or a seed film is selectively formed on the interlayer insulating film and on an inner surface and a bottom surface of the holes. A film of Ru, Ir or Pt is deposited by chemical vapor deposition on the deposition preventing film, or on the interlayer insulating film by utilizing the seed film, under the condition where underlayer dependency occurs. In consequence, lower electrodes are formed in accordance with a pattern of the deposition preventing film or the seed film. A dielectric film is formed on the lower electrodes and the deposition preventing film at a predetermined temperature. The material of the lower electrodes does not lose conduction even when exposed to the predetermined temperature employed for forming the dielectric film. Upper electrodes are further formed on the dielectric film. The upper and lower electrodes and an oxide dielectric film together constitute capacitors of the memory cells.

    摘要翻译： 在包括多个存储单元的半导体器件中，在形成有多个孔的层间绝缘膜上形成防沉积膜，或者在层间绝缘膜和内表面上选择性地形成晶种膜， 孔的底面。 在发生底层依赖性的条件下，通过化学气相沉积在沉积防止膜上或通过利用种子膜在层间绝缘膜上沉积Ru，Ir或Pt的膜。 因此，根据防沉积膜或种子膜的图案形成下部电极。 在预定温度下在下电极和防沉积膜上形成电介质膜。 即使暴露在用于形成电介质膜的预定温度下，下电极的材料也不会导通。 上电极进一步形成在电介质膜上。 上下电极和氧化物介质膜一起构成存储单元的电容器。

    Semiconductor integrated circuit device and the method of producing the same
    5.
    发明授权
    Semiconductor integrated circuit device and the method of producing the same 失效
    半导体集成电路器件及其制造方法

    公开(公告)号：US06664157B2

    公开(公告)日：2003-12-16

    申请号：US09775547

    申请日：2001-02-05

    申请人： Shinpei Iijima ,  Yoshitaka Nakamura ,  Masahiko Hiratani ,  Yuichi Matsui ,  Naruhiko Nakanishi

    发明人： Shinpei Iijima ,  Yoshitaka Nakamura ,  Masahiko Hiratani ,  Yuichi Matsui ,  Naruhiko Nakanishi

    IPC分类号： H01L218242

    CPC分类号： H01L27/10855 ,  H01L27/10888 ,  H01L28/91

    摘要： Plug electrodes of silicon are formed so as to be buried in through holes in a first insulating film, the plug electrodes being electrically connected to the source and drain regions of a MISFET on the main surface of a semiconductor substrate. Then, a second insulating film is deposited thereon and holes are formed therein such that the plug electrodes of silicon are exposed. A barrier film is formed on the surfaces of the silicon plugs, and in the holes a dielectric is formed to form lower electrodes of the capacitor elements and an upper electrode therefor.

    摘要翻译： 形成硅的插入电极以埋在第一绝缘膜的通孔中，插塞电极与半导体衬底的主表面上的MISFET的源极和漏极区域电连接。 然后，在其上沉积第二绝缘膜，并在其中形成孔，使得硅的插塞电极露出。 在硅插头的表面上形成阻挡膜，并且在孔中形成电介质以形成电容器元件的下电极和用于其的上电极。

    Immune function modulating agents
    6.
    发明授权
    Immune function modulating agents 有权
    免疫功能调节剂

    公开(公告)号：US09314041B2

    公开(公告)日：2016-04-19

    申请号：US11817617

    申请日：2006-02-23

    申请人： Toshihiro Sashihara ,  Makoto Yamaguchi ,  Yoshitaka Nakamura ,  Shuji Ikegami ,  Seiko Narushima ,  Katsunori Kimura ,  Shinya Nagafuchi ,  Masaki Terahara

    发明人： Toshihiro Sashihara ,  Makoto Yamaguchi ,  Yoshitaka Nakamura ,  Shuji Ikegami ,  Seiko Narushima ,  Katsunori Kimura ,  Shinya Nagafuchi ,  Masaki Terahara

    IPC分类号： C12N1/20 ,  A23C19/032 ,  A23C9/123 ,  A23L1/30 ,  A61K35/747 ,  C12R1/225

    CPC分类号： A23C19/0323 ,  A23C9/1234 ,  A23L33/135 ,  A61K35/747 ,  C12R1/225

    摘要： A probiotic lactobacillus was discovered from lactobacilli of the Lactobacillus genus independently isolated from human adult feces. The probiotic lactobacillus was selected from other bacterial strains for: (1) being highly resistant to gastric acid/bile acid; (2) having a high promoting activity on IL-12 production from mouse derived spleen cells and a high Th1/Th2 balance-improving effect; (3) having a high ability to inhibit the production of antigen-specific IgE induced by intraperitoneally administering ovalbumin to BALB/c mice; (4) having a high ability to inhibit the production of antigen-specific IgE induced by orally administering a food antigen to C57BL/6N mice; (5) having a high Natural Killer cell-activating ability; (6) having a high IL-12 production-promoting activity on spleen cells and mesenteric lymph node cells derived from mice immunized with ovalbumin and a high Th1/Th2 balance-improving effect; and (7) having a high ability to suppress eosinophilia induced by a cedar pollen-extracted antigen. This discovery led to the completion of the present invention.

    摘要翻译： 从人类成年粪便独立分离的乳杆菌属的乳杆菌中发现益生菌乳杆菌。 选自其他细菌菌株的益生菌乳杆菌：（1）对胃酸/胆汁酸具有高度抗性; （2）对小鼠来源的脾细胞的IL-12产生促进活性高，Th1 / Th2平衡提高效果好; （3）具有抑制通过向BALB / c小鼠腹膜内给予卵白蛋白诱导的抗原特异性IgE产生的高能力; （4）通过口服给C57BL / 6N小鼠口服给予抗原而诱导抗原特异性IgE产生的能力较强; （5）具有高自然杀伤细胞活化能力; （6）对来自用卵白蛋白免疫的小鼠脾细胞和肠系膜淋巴结细胞具有高IL-12产生促进活性和高Th1 / Th2平衡改善效果; 和（7）具有高的抑制由雪松花粉提取的抗原诱导的嗜酸性粒细胞增多的能力。 这一发现导致了本发明的完成。

    CATALYST DETERIORATION DETERMINATION SYSTEM
    7.
    发明申请
    CATALYST DETERIORATION DETERMINATION SYSTEM 审中-公开
    催化剂测定系统

    公开(公告)号：US20130336841A1

    公开(公告)日：2013-12-19

    申请号：US14002894

    申请日：2011-03-03

    申请人： Yoshitaka Nakamura ,  Hirotaka Saito ,  Toru Kidokoro ,  Hiroshi Sawada ,  Kenji Sakurai

    发明人： Yoshitaka Nakamura ,  Hirotaka Saito ,  Toru Kidokoro ,  Hiroshi Sawada ,  Kenji Sakurai

    IPC分类号： G01N33/00

    CPC分类号： G01N33/0054 ,  F01N3/206 ,  F01N11/007 ,  F01N2550/02 ,  F01N2560/021 ,  F01N2610/03 ,  F01N2900/0408 ,  F01N2900/1402 ,  Y02T10/47

    摘要： The determination of deterioration of a NOx storage reduction catalyst (4) is carried out more accurately. When a reducing agent is supplied from a supply device (5) to the NOx catalyst (4), a first supply of the reducing agent and a second supply of the reducing agent are carried out in a sequential manner by adjusting an amount of the reducing agent in such a manner that an air fuel ratio of the exhaust gas becomes a predetermined rich air fuel ratio, and a determination whether or not the NOx catalyst (4) has deteriorated is made based on a detected value of a detection device (8), which detects NH3 in the exhaust gas at the downstream side of the NOx catalyst (4), after a predetermined period of time has elapsed from the start of the first supply of the reducing agent, and after the start of the second supply of the reducing agent.

    摘要翻译： 进一步精确地确定NOx储存还原催化剂（4）的劣化。 当从供给装置（5）向NOx催化剂（4）供给还原剂时，通过调节还原剂的量来顺序地进行还原剂的第一次供给和还原剂的第二供给 以使得排气的空燃比成为规定的浓空燃比，并且基于检测装置（8）的检测值来判定NOx催化剂（4）是否劣化， ，其在从所述还原剂的第一次供给开始经过预定时间后，在所述NOx催化剂（4）的下游侧的废气中检测NH 3，并且在所述第二次供给所述NOx催化剂 还原剂。

    METHOD OF GENERATING KEY
    8.
    发明申请
    METHOD OF GENERATING KEY 有权
    产生关键的方法

    公开(公告)号：US20130272520A1

    公开(公告)日：2013-10-17

    申请号：US13976573

    申请日：2011-12-27

    申请人： Jun Noda ,  Hiroyuki Seki ,  Yoshitaka Nakamura

    发明人： Jun Noda ,  Hiroyuki Seki ,  Yoshitaka Nakamura

    IPC分类号： H04L9/08

    CPC分类号： H04L9/0861 ,  H04M1/7253 ,  H04M2250/12 ,  H04M2250/64

    摘要： According to a method of generating a key of the present invention, a first device and a second device are first brought into contact with one vibrator. In this state, the vibrator generates vibration. A first acceleration sensor provided in the first device and a second acceleration sensor provided in the second device detect the vibration. Subsequently, the first device notifies the second device of a first feature value based upon the detection result of the first acceleration sensor. The second device notifies the first device of a second feature value based upon the detection result of the second acceleration sensor. Then the first device compares the notified second feature value with the first feature value and generates a key based upon the comparison result. The second device compares the notified first feature value with the second feature value and generates a key based upon the comparison result.

    摘要翻译： 根据本发明的产生钥匙的方法，首先使第一装置和第二装置与一个振动器接触。 在这种状态下，振动器产生振动。 设置在第一装置中的第一加速度传感器和设置在第二装置中的第二加速度传感器检测振动。 随后，第一装置基于第一加速度传感器的检测结果向第二装置通知第一特征值。 第二装置基于第二加速度传感器的检测结果向第一装置通知第二特征值。 然后，第一设备将通知的第二特征值与第一特征值进行比较，并且基于比较结果生成密钥。 第二设备将通知的第一特征值与第二特征值进行比较，并且基于比较结果生成密钥。