Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head
    4.
    发明授权
    Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head 有权
    外延膜,压电元件,铁电元件,其制造方法和液体排出头

    公开(公告)号:US08198199B2

    公开(公告)日:2012-06-12

    申请号:US12526308

    申请日:2008-03-05

    CPC classification number: H01L41/0973 H01L41/0815 H01L41/319

    Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B  (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2  (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

    Abstract translation: 公开了一种外延膜,其包括:在基板的表面上加热具有膜厚为1.0nm以上至10nm以下的SiO 2层的Si基板; 并使用由以下组成式表示的金属靶在SiO 2层上形成:yA(1-y)B(1),其中A是选自由Y和 Sc,B为Zr,y为0.03以上且0.20以下的数值,外延膜由以下组成式表示:xA 2 O 3 - (1-x)BO 2(2),其中A和B分别为 与组成式(1)的A和B相同的元素,x是0.010以上至0.035以下的数值。

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