公开(公告)号：US5671632A

公开(公告)日：1997-09-30

申请号：US643533

申请日：1996-05-06

申请人： Yuichiro Tokunaga ,  Takeshi Inao

发明人： Yuichiro Tokunaga ,  Takeshi Inao

IPC分类号： B21C1/00 ,  B21C3/02 ,  B21C37/04 ,  B21F9/00 ,  G01C19/5663 ,  G01C25/00 ,  B21C1/18 ,  B21C9/00

CPC分类号： G01C19/5663 ,  B21C1/003 ,  B21C37/045 ,  B21F9/00 ,  B21F9/007 ,  G01C25/00

摘要： A wire 10 made of metal is shaped into a wire having a diameter of 5 mm by a circular die 12 and then, cut to a plurality of lengths of 500 mm. The wire 10 is heated in hydrogen atmosphere at 800.degree. C. for two hours. Then, the wire 10 is drawn by a plurality of triangular dies 14, 16, 18, and 20 sequentially without winding the wire 10 around a reel. As a result, the wire 10 is shaped into an approximately regular triangular configuration in section. The wire 10 shaped into the approximately regular triangular configuration is cut to a plurality of lengths of 40 mm and then supplied to a predetermined place for a subsequent processing.

摘要翻译： 由金属制成的线材10通过圆形模具12成形为直径为5mm的线材，然后切割成500mm的多个长度。 将导线10在氢气氛中在800℃加热2小时。 然后，线10由多个三角形模具14,16,18和20依次拉出，而不将线10卷绕在卷轴上。 结果，导线10的截面成形为大致规则的三角形构造。 成形为近似规则的三角形构造的线10被切割成40mm的多个长度，然后提供给预定的位置用于后续处理。

公开(公告)号：US20050039534A1

公开(公告)日：2005-02-24

申请号：US10891341

申请日：2004-07-13

申请人： Yuichiro Tokunaga ,  Takeshi Inao

发明人： Yuichiro Tokunaga ,  Takeshi Inao

IPC分类号： G01N29/04 ,  G01N19/04 ,  G01N29/06 ,  G01N29/11 ,  G01N29/27

CPC分类号： G01N29/27 ,  G01N19/04 ,  G01N29/11 ,  G01N2291/0237 ,  G01N2291/02872 ,  G01N2291/0423 ,  G01N2291/044

摘要： A method for measuring a film strength of a film on an object. An incident angle of pressure waves with respect to an object to be measured, the object including a base coated with a film, is set for applying the pressure waves to the object. The incident angle is varied over a range including a critical angle θcr. The object generates surface waves, in response to the pressure waves, at and near the critical angle. In response to the surface waves, the object generates leaky waves, which are pressure waves caused by the surface waves. The intensity of pressure waves including reflected waves and leaky waves from the object are measured. A received intensity V0 at an incident angle where no leaky wave is generated, and the intensity difference VC between V0 and the received intensity at the critical angle θcr when the film strength is high are measured. An intensity difference VR between V0 and the received intensity when the intensity of the leaky waves remains unchanged, regardless of the changes in the incident angle, within the range where the leaky waves are generated, which indicates a low film strength, is also measured. Thus, the film strength is determined based on V0, VC, and VR.

摘要翻译： 一种用于测量物体上的膜的膜强度的方法。 相对于被测定物体的压力波的入射角被设定为对被涂物施加压力波。 入射角度在包括临界角度的范围内变化。 该物体响应于压力波在临界角处和附近产生表面波。 响应于表面波，物体产生泄漏波，其是由表面波引起的压力波。 测量包括反射波和来自物体的泄漏波的压力波的强度。 测量不产生泄漏波的入射角的接收强度V0，以及膜强度高时V0与临界角的接收强度之间的强度差VC。 另外，也测量了在产生泄漏波的范围内，无论入射角的变化如何，泄漏波的强度保持不变的V0与接收强度之间的强度差VR。 因此，膜强度基于V0，VC和VR确定。

公开(公告)号：US07040170B2

公开(公告)日：2006-05-09

申请号：US10891341

申请日：2004-07-13

申请人： Yuichiro Tokunaga ,  Takeshi Inao

发明人： Yuichiro Tokunaga ,  Takeshi Inao

IPC分类号： G01N29/00 ,  G01B17/00

CPC分类号： G01N29/27 ,  G01N19/04 ,  G01N29/11 ,  G01N2291/0237 ,  G01N2291/02872 ,  G01N2291/0423 ,  G01N2291/044

摘要： A method for measuring a film strength of a film on an object. An incident angle of pressure waves with respect to an object to be measured, the object including a base coated with a film, is set for applying the pressure waves to the object. The incident angle is varied over a range including a critical angle θcr. The object generates surface waves, in response to the pressure waves, at and near the critical angle. In response to the surface waves, the object generates leaky waves, which are pressure waves caused by the surface waves. The intensity of pressure waves including reflected waves and leaky waves from the object are measured. A received intensity V0 at an incident angle where no leaky wave is generated, and the intensity difference VC between V0 and the received intensity at the critical angle θcr when the film strength is high are measured. An intensity difference VR between V0 and the received intensity when the intensity of the leaky waves remains unchanged, regardless of the changes in the incident angle, within the range where the leaky waves are generated, which indicates a low film strength, is also measured. Thus, the film strength is determined based on V0, VC, and VR.

摘要翻译： 一种用于测量物体上的膜的膜强度的方法。 相对于被测定物体的压力波的入射角被设定为对被涂物施加压力波。 入射角度在包括临界角度的范围内变化。 该物体响应于压力波在临界角处和附近产生表面波。 响应于表面波，物体产生泄漏波，其是由表面波引起的压力波。 测量包括反射波和来自物体的泄漏波的压力波的强度。 在不产生泄漏波的入射角处的接收强度V 0 <0>和V 0 <0>之间的强度差V SUB和接收强度 测量膜强度高时的临界角度。 当泄漏波的强度保持不变时，不管入射角度的变化，在V 0之间的强度差V SUB R IN和接收强度之间， 产生表示低膜强度的漏波也被测量。 因此，膜强度基于V 0，V C和V R R确定。

公开(公告)号：US20110110016A1

公开(公告)日：2011-05-12

申请号：US13009395

申请日：2011-01-19

申请人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

发明人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

IPC分类号： H01G4/06

CPC分类号： H01G4/228 ,  H01G4/232 ,  H01G4/33 ,  H01L23/5223 ,  H01L24/11 ,  H01L27/016 ,  H01L28/40 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05099

摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.

摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。

公开(公告)号：US06223638B1

公开(公告)日：2001-05-01

申请号：US09417211

申请日：1999-10-13

申请人： Takeshi Inao

发明人： Takeshi Inao

IPC分类号： B26D100

CPC分类号： B28D5/0064 ,  B23Q15/12 ,  B26D5/20 ,  B28D5/024 ,  Y10T83/04 ,  Y10T83/148 ,  Y10T83/175 ,  Y10T83/536

摘要： A slicing method and slicing apparatus eliminate occurrence of cracking and/or chipping of a to-be-machined object without reducing the processing speed thereof. To this end, the slicing method comprising cutting the to-be-machined object W by supporting the to-be-machined object W on a table 10 and causing this table 10 to travel in an x-axis direction while allowing a slicing blade 20 to rotate at a predetermined position. A sensor 12 detects a variable load F that the to-be-machined object receives during slicing and an actuator 11 operatively responds to receipt of a detection signal of the sensor 12. The actuator 11 forces the to-be-machined object W to deform in a direction which permits reduction of the aforesaid variable load F. The actuator is provided between the sensor 12 and table 10, or alternatively between the to-be-machined object W and sensor 12.

摘要翻译： 切片方法和切片装置消除了被加工物体的龟裂和/或碎裂的发生，而不会降低其加工速度。 为此，切片方法包括通过将台面10上的待加工对象W支撑在桌子10上并使得台10沿X轴方向行进同时允许切片刀20来切割被加工物体W 以在预定位置旋转。 传感器12检测待切削物体在切片期间接收的可变载荷F，并且致动器11可操作地响应于接收传感器12的检测信号。致动器11迫使被加工物体W变形 在允许减小上述可变载荷F的方向上。致动器设置在传感器12和台10之间，或者备选地在被加工物体W和传感器12之间。

公开(公告)号：US08390982B2

公开(公告)日：2013-03-05

申请号：US13009395

申请日：2011-01-19

申请人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

发明人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

IPC分类号： H01G4/228 ,  H01G4/06

CPC分类号： H01G4/228 ,  H01G4/232 ,  H01G4/33 ,  H01L23/5223 ,  H01L24/11 ,  H01L27/016 ,  H01L28/40 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05099

摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.

摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。

公开(公告)号：US06887127B2

公开(公告)日：2005-05-03

申请号：US10108417

申请日：2002-03-29

申请人： Toru Nishikawa ,  Takeshi Inao

发明人： Toru Nishikawa ,  Takeshi Inao

IPC分类号： B24B37/08 ,  B24B49/10 ,  B24B49/00

CPC分类号： B24B37/08 ,  B24B49/10

摘要： A polishing apparatus is provided for accurately detecting the relative displacement between an upper wheel and a lower wheel and thus for reliably polishing workpieces to a desired thickness. The polishing apparatus includes an upper wheel for pressing at least one workpiece, a lower wheel for supporting the workpiece, non-contact-type displacement-detection device for detecting the relative displacement between the upper wheel and the lower wheel, and a reference table for providing a displacement-detection reference position. The non-contact-type displacement-detection device is joined to the upper wheel so as to move therewith. The reference table is disposed at a position opposing the displacement-detection device and also is integrally connected to the lower wheel.

摘要翻译： 提供了一种用于精确地检测上轮和下轮之间的相对位移并因此可靠地将工件抛光到所需厚度的抛光装置。 抛光装置包括用于按压至少一个工件的上轮，用于支撑工件的下轮，用于检测上轮和下轮之间的相对位移的非接触型位移检测装置，以及用于 提供位移检测基准位置。 非接触型位移检测装置与上轮连接以与其一起移动。 参考台设置在与位移检测装置相对的位置处，并且一体地连接到下轮。

公开(公告)号：US07001244B2

公开(公告)日：2006-02-21

申请号：US10823631

申请日：2004-04-14

申请人： Toru Nishikawa ,  Takeshi Inao

发明人： Toru Nishikawa ,  Takeshi Inao

IPC分类号： B24B49/00

CPC分类号： B24B37/08 ,  B24B49/10

摘要： A polishing apparatus is provided for accurately detecting the relative displacement between an upper wheel and a lower wheel and thus for reliably polishing workpieces to a desired thickness. The polishing apparatus includes an upper wheel for pressing at least one workpiece, a lower wheel for supporting the workpiece, non-contact-type displacement-detection device for detecting the relative displacement between the upper wheel and the lower wheel, and a reference table for providing a displacement-detection reference position. The non-contact-type displacement-detection device is joined to the upper wheel so as to move therewith. The reference table is disposed at a position opposing the displacement-detection device and also is integrally connected to the lower wheel.

公开(公告)号：US5569860A

公开(公告)日：1996-10-29

申请号：US422126

申请日：1995-04-13

申请人： Tatsuhiko Aizawa ,  Takeshi Inao

发明人： Tatsuhiko Aizawa ,  Takeshi Inao

IPC分类号： G01N15/00 ,  B22F3/02 ,  B22F3/17 ,  B22F3/20 ,  B28B3/20 ,  G01N3/28 ,  G01N1/00

CPC分类号： G01N3/28 ,  B22F3/17 ,  B22F3/20

摘要： Optimum conditions for extrusion forging by using a powder material are determined by making a cylindrical billet out of the powder material, subjecting it to a deformation stress between plates to measure its strain as well as the time-rate of change in the strain, thereby determining parameters in the stress-strain formula, and carrying out a simulation analysis by an arbitrary Lagrangian-Eulerian method with an equation of motion obtained by the principle of virtual power. In considering the virtual power, bulk work is also taken into consideration. By such simulation analysis, data such as pressure distribution, speed distribution and density distribution are obtained. Optimum conditions are obtained by analyzing these data.

摘要翻译： 通过使用粉末材料进行挤出锻造的最佳条件是通过将圆柱形坯料从粉末材料中制成的，使其在板之间产生变形应力以测量其应变以及应变变化的时间变化来确定 应力应变公式中的参数，并通过任意拉格朗日 - 欧拉法利用虚拟功率原理获得的运动方程进行模拟分析。 在考虑虚拟电源时，也要考虑批量工作。 通过这种模拟分析，可以获得压力分布，速度分布和密度分布等数据。 通过分析这些数据获得最佳条件。

公开(公告)号：US07898792B2

公开(公告)日：2011-03-01

申请号：US12103234

申请日：2008-04-15

申请人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

发明人： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

IPC分类号： H01G4/06 ,  H01G4/20

CPC分类号： H01G4/228 ,  H01G4/232 ,  H01G4/33 ,  H01L23/5223 ,  H01L24/11 ,  H01L27/016 ,  H01L28/40 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05099

摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.

摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。