利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.028 秒)

    Transparent photo detector device
    2.
    发明授权
    Transparent photo detector device 失效
    透明光电探测器

    公开(公告)号：US4831429A

    公开(公告)日：1989-05-16

    申请号：US877315

    申请日：1986-06-23

    申请人： Saburo Nakashima ,  Shoichiro Nakayama ,  Shigeru Noguchi ,  Shoichi Nakano ,  Yukinori Kuwano ,  Kaneo Watanabe ,  Hiroyuki Kuriyama

    发明人： Saburo Nakashima ,  Shoichiro Nakayama ,  Shigeru Noguchi ,  Shoichi Nakano ,  Yukinori Kuwano ,  Kaneo Watanabe ,  Hiroyuki Kuriyama

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14665

    摘要： A transparent photo detector device according to an aspect of the present invention comprises: a transparent insulator substrate; a plurality of light sensor elements dispersively disposed on a main surface of the substrate, said sensor element including a transparent front electrode, a semiconductor layer for photo electric function and an opaque back electrode formed in that order on the main surface of the substrate, said semiconductor layer being neither protracting from nor retracting into between said front and back electrodes; and a transparent wire pattern formed on the main surface of the substrate for electrically connecting the plurality of sensor elements.

    摘要翻译： 根据本发明的一个方面的透明光电检测器件包括：透明绝缘体衬底; 多个光传感器元件分散地设置在基板的主表面上，所述传感器元件包括透明前电极，用于光电功能的半导体层和在基板的主表面上依次形成的不透明背电极，所述 半导体层既不从所述前电极和后电极伸出或缩回; 以及形成在所述基板的主表面上的用于电连接所述多个传感器元件的透明线图案。

    Scanning type image sensor
    3.
    发明授权
    Scanning type image sensor 失效
    扫描型图像传感器

    公开(公告)号：US5097338A

    公开(公告)日：1992-03-17

    申请号：US438087

    申请日：1989-11-16

    申请人： Hiroyuki Kuriyama ,  Kaneo Watanabe ,  Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    发明人： Hiroyuki Kuriyama ,  Kaneo Watanabe ,  Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

    IPC分类号： H04N5/357 ,  H04N5/369

    CPC分类号： H04N5/357

    摘要： An image sensor includes a photodiode array having a number of photodiodes arranged in a linear line. Each of the photodiodes is connected to each of analog switches which are sequentially turned-on by a drive pulse. Each analog switch includes a parallel connection of a P-channel MOS-FET and an N-channel MOS-FET having the same gate capacitance. The drive pulse is applied to a gate of the P-channel MOS-FET through one inverter and to a gate of the N-channel MOS-FET through two inverters being connected in a cascade fashion. A delay time of the one inverter and a total delay time of the two inverters are set to be equal to each other, and therefore, the two MOS-FETs are simultaneously turned-on or -off in response to the same drive pulse. A dummy switch composed of a complementary MOS-FET circuit which acts in a completely reversed phase with respect to the analog switch is provided, and a switching noise occurring in the analog switch and a switching noise occurring in the dummy switch are canceled with each other at an output terminal.

    摘要翻译： 图像传感器包括具有以线性线排列的多个光电二极管的光电二极管阵列。 每个光电二极管连接到通过驱动脉冲顺序导通的每个模拟开关。 每个模拟开关包括P沟道MOS-FET和具有相同栅极电容的N沟道MOS-FET的并联连接。 驱动脉冲通过一个反相器施加到P沟道MOS-FET的栅极，并通过两个逆变器串联连接到N沟道MOS-FET的栅极。 一个反相器的延迟时间和两个反相器的总延迟时间被设置为彼此相等，因此两个MOS-FET同时响应于相同的驱动脉冲而导通或断开。 提供由相对于模拟开关完全反相的互补MOS-FET电路构成的虚拟开关，并且在模拟开关中发生的开关噪声和在虚拟开关中发生的开关噪声彼此抵消 在输出端子。

    Photovoltaic device
    6.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US5085711A

    公开(公告)日：1992-02-04

    申请号：US480453

    申请日：1990-02-15

    申请人： Masayuki Iwamoto ,  Koji Minami ,  Kaneo Watanabe

    发明人： Masayuki Iwamoto ,  Koji Minami ,  Kaneo Watanabe

    IPC分类号： H01L31/0224 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/204 ,  H01L31/022466 ,  H01L31/03687 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.

    摘要翻译： 一种能够获得高开路电压的光电器件，其中半导体的结晶从其形成的第一阶段被加速，使得半导体的薄层结晶，通过将设置在半导体和衬底之间的电极掺杂， 与半导体中的元素反应以加速半导体的结晶或通过在半导体和衬底之间设置由掺杂有所述元素的化合物制成的膜的元件。

    Photovoltaic device
    8.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US4776894A

    公开(公告)日：1988-10-11

    申请号：US84947

    申请日：1987-08-13

    申请人： Kaneo Watanabe ,  Yukio Nakashima

    发明人： Kaneo Watanabe ,  Yukio Nakashima

    IPC分类号： H01L31/076 ,  H01L31/20 ,  H01L31/06

    CPC分类号： H01L31/076 ,  H01L31/20 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

    摘要： A first photovoltaic device according to the present invention comprises a plurality of unit photovoltaic cells layered in optical series, each unit photovoltaic cell including an optically active layer made of amorphous silicon and two impurity doped layers of opposite conductivity types arranged at opposite sides of the optically active layer; wherein a first impurity doped layer of a first unit photovoltaic cell located at the contact interface with a second unit photovoltaic cell is made of a first amorphous silicon alloy of first conductivity type, having an optically forbidden band width wider than that of amorphous silicon, and a second impurity doped layer of said second photovoltaic cell located at said contact interface is made of a second amorphous silicon alloy, different from said first amorphous silicon alloy, of opposite conductivity type from said first conductivity type, having an optically forbidden band width wider than that of the amorphous silicon.A second photovoltaic device according to the present invention further comprises an additional impurity doper layer of either of the two conductivity types and made of non-monocrystalline ailicon, interposed between said first and second impurity layers.

    摘要翻译： 根据本发明的第一光伏器件包括以光学系列分层的多个单元光伏电池，每个单位光伏电池包括由非晶硅制成的光学有源层和布置在光学相对侧的相反导电类型的两个杂质掺杂层 活性层 其中位于与第二单位光伏电池的接触界面处的第一单位光伏电池的第一杂质掺杂层由第一导电类型的第一非晶硅合金制成，具有宽于无定形硅的光学禁止带宽，以及 位于所述接触界面处的所述第二光伏电池的第二杂质掺杂层由不同于所述第一非晶硅合金的与所述第一导电类型相反的导电类型的第二非晶硅合金制成，具有宽于 非晶硅的。 根据本发明的第二光伏器件还包括介于所述第一和第二杂质层之间的两种导电类型中的任一种并由非单晶硅制成的附加杂质层。

    Controller and data processing system
    9.
    发明授权
    Controller and data processing system 失效
    控制器和数据处理系统

    公开(公告)号：US07024513B2

    公开(公告)日：2006-04-04

    申请号：US09876530

    申请日：2001-06-07

    申请人： Kaneo Watanabe ,  Masayuki Ishibashi ,  Hiroyuki Tsuda

    发明人： Kaneo Watanabe ,  Masayuki Ishibashi ,  Hiroyuki Tsuda

    IPC分类号： G06F12/00

    CPC分类号： G06F3/0607 ,  G06F3/0658 ,  G06F3/0677

    摘要： A low-cost controller that operates in accordance with firmware stored in a memory. The controller includes a data processing circuit that performs predetermined processing on data and generates processed data. A write wire is connected to the memory, and a terminal is provided for use in the output of the data processed by the data processing circuit and/or the provision of the data to the data processing circuit. The controller includes a selector for connecting the write wire and the terminal to write the firmware to the memory.

    摘要翻译： 一种低成本控制器，可根据存储在存储器中的固件进行操作。 控制器包括对数据执行预定处理并产生处理数据的数据处理电路。 写入线连接到存储器，并且提供一个终端，用于将由数据处理电路处理的数据输出和/或向数据处理电路提供数据。 控制器包括用于连接写入线和终端以将固件写入存储器的选择器。

    Thin film transistor with 10-15% hydrogen content
    10.
    发明授权
    Thin film transistor with 10-15% hydrogen content 失效
    薄膜晶体管含氢量为10-15％

    公开(公告)号：US5093703A

    公开(公告)日：1992-03-03

    申请号：US328825

    申请日：1989-03-27

    申请人： Koji Minami ,  Kaneo Watanabe ,  Masayuki Iwamoto

    发明人： Koji Minami ,  Kaneo Watanabe ,  Masayuki Iwamoto

    IPC分类号： H01L21/205 ,  H01L21/263 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/78666

    摘要： A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A gate electrode is formed positioned between the source electrode and the drain electrode. Insulation film is interposed between the gate electrode and the a-Si:H film. In a direct photo-CVD method using a low pressure mercury lamp, bandtail characteristics energy of the a-Si:H film is made less than 40 meV by controlling a decomposition region of a reaction gas, that is, the distance between the glass substrate and a gas supply port, whereby a thin film transistor having a good response is obtainable.

    摘要翻译： 薄膜晶体管包括在其表面上形成氢化非晶硅（a-Si：H）膜的玻璃基板。 在a-Si：H膜上，源电极和漏电极分别以它们之间的适当间隔形成。 形成位于源电极和漏电极之间的栅电极。 绝缘膜介于栅电极和a-Si：H膜之间。 在使用低压汞灯的直接光CVD法中，通过控制反应气体的分解区域，即玻璃基板之间的距离，使a-Si：H膜的带尾特性能量小于40meV 和气体供给口，由此可以获得具有良好响应的薄膜晶体管。