公开(公告)号：US4670293A

公开(公告)日：1987-06-02

申请号：US899789

申请日：1986-08-22

申请人： Masaru Yamano ,  Yukinori Kuwano ,  Shoichi Nakano ,  Tsugufumi Matsuoka ,  Souichi Sakai ,  Hirosato Yagi ,  Nobuhiro Okuda

发明人： Masaru Yamano ,  Yukinori Kuwano ,  Shoichi Nakano ,  Tsugufumi Matsuoka ,  Souichi Sakai ,  Hirosato Yagi ,  Nobuhiro Okuda

IPC分类号： E04D13/18 ,  H01L21/205 ,  H01L27/142 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/20 ,  B05D3/06

CPC分类号： H01L31/202 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H02S20/25 ,  Y02B10/12 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/291

摘要： A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.

摘要翻译： 通过将基板放置在包括至少一对放电电极的反应室，用于制造期望的半导体膜的反应气体的入口和出口的方法，在具有非平坦表面的基板上制造半导体膜的方法 为了减压，在存在用于制造所述半导体膜的所述反应气体的情况下进行放电，同时将所述衬底的所述非平坦表面布置在形成在所述放电电极之间的等离子体区域的外部，并进一步将所述非平坦表面定位在基本上 相对于所述放电电极的电极表面的垂直方向，由此半导体膜直接且均匀地沉积在所述基板的所述非平坦表面上，这在制造例如屋顶瓦片状光伏器件中是有价值的。

公开(公告)号：US4705912A

公开(公告)日：1987-11-10

申请号：US909255

申请日：1986-09-19

申请人： Yukio Nakashima ,  Hisao Haku ,  Kaneo Watanabe ,  Tsugufumi Matsuoka

发明人： Yukio Nakashima ,  Hisao Haku ,  Kaneo Watanabe ,  Tsugufumi Matsuoka

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S148/16

摘要： A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multilayer so that light may be applied to the i-type layer through the multilayer.

摘要翻译： 光电器件具有一种导电类型的半导体多层，其包括周期性地堆叠以形成至少一个量子阱的多个不同种类的非晶薄构成层。 i型半导体层，其与多层相邻，使得光可以通过多层施加到i型层。

公开(公告)号：US06922670B2

公开(公告)日：2005-07-26

申请号：US09823282

申请日：2001-03-30

申请人： Teruhiro Yamada ,  Atsushi Maeda ,  Tsugufumi Matsuoka

发明人： Teruhiro Yamada ,  Atsushi Maeda ,  Tsugufumi Matsuoka

IPC分类号： G06F3/16 ,  G10L15/26 ,  H04M3/493 ,  G01L15/22

CPC分类号： H04M3/4938 ,  G06F3/167 ,  G10L15/26 ,  H04M2201/40

摘要： A user support system employing agent technology is provided. The entrance server identifies the user command by matching it with a collection of anticipated user commands. An index search is performed to identify the contents of the user command. The identified user command is then used to determine which specialized server should respond to the user command. The specialized server contains a collection of action patterns for an agent to use in responding to a user command. An agent supports a user in searching for information and/or navigating to the desired information through friendly conversation with that user. The entrance server is configured as a portal site and a specialized server is provided for each specialized field.

摘要翻译： 提供采用代理技术的用户支持系统。 入口服务器通过将用户命令与预期用户命令的集合进行匹配来识别用户命令。 执行索引搜索以识别用户命令的内容。 然后，使用标识的用户命令来确定哪个专用服务器应该响应用户命令。 专用服务器包含用于响应用户命令的代理的动作模式的集合。 代理支持用户通过与该用户的友好对话来搜索信息和/或导航到期望的信息。 入口服务器被配置为门户网站，并为每个专业领域提供专门的服务器。

公开(公告)号：US4719123A

公开(公告)日：1988-01-12

申请号：US891758

申请日：1986-07-31

申请人： Hisao Haku ,  Yukio Nakashima ,  Kaneo Watanabe ,  Tsugufumi Matsuoka

发明人： Hisao Haku ,  Yukio Nakashima ,  Kaneo Watanabe ,  Tsugufumi Matsuoka

IPC分类号： H01L21/205 ,  H01L31/0352 ,  B05D3/06

CPC分类号： B82Y20/00 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/035245 ,  Y10S438/931

摘要： A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.

摘要翻译： 通过利用光CVD法在堆叠中形成至少一种层来制造具有周期性地堆叠的多个不同种类的非晶薄层的周期性多层膜的方法，由此， 实现了晶格和更少的缺陷。

公开(公告)号：US4843451A

公开(公告)日：1989-06-27

申请号：US228796

申请日：1988-07-29

申请人： Kaneo Watanabe ,  Tsugufumi Matsuoka ,  Yukio Nakashima ,  Hisao Haku

发明人： Kaneo Watanabe ,  Tsugufumi Matsuoka ,  Yukio Nakashima ,  Hisao Haku

IPC分类号： H01L31/04 ,  H01L31/0288 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/202 ,  H01L31/0288 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.

摘要翻译： 光伏器件具有形成p-i-n结结构的至少一组非晶半导体层，其中具有给定厚度的至少一个半导体层掺杂有氮和氧至形成所述给定厚度的至少一部分的深度。 这样的光伏器件通过在衬底上沉积至少一组形成pin结结构的非晶半导体层，并且通过用氮和氧掺杂至少一个层至深度形成至少一部分厚度的 掺杂层。

公开(公告)号：US4755483A

公开(公告)日：1988-07-05

申请号：US888474

申请日：1986-07-21

申请人： Hisao Haku ,  Yukio Nakashima ,  Tsugufumi Matsuoka ,  Kaneo Watanabe

发明人： Hisao Haku ,  Yukio Nakashima ,  Tsugufumi Matsuoka ,  Kaneo Watanabe

IPC分类号： H01L21/04 ,  H01L21/205

CPC分类号： H01L21/0445 ,  Y10S438/931

摘要： A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.

摘要翻译： 半导体器件的制造方法使用三乙基硼（B（C 2 H 5）3）的三甲基硼（B（CH 3）3））或其混合物作为p型掺杂剂和/或带隙加宽源材料气体 用于形成p型非晶半导体膜。 因此，可以减少使用的不同气体的量和数量，并且还可以提高光电导率和暗电导率，由此适用于使用具有p型非晶半导体膜的光伏电池，光电传感器等的半导体器件，其具有 可以产生宽的光学带隙。